STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET™ III MOSFET General features Type VDSS RDS(on) ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold drive ■ Standard outline for easy automated surface mount assembly S0-8 SO-8 Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STS8C5H30L S8C5H30L SO-8 Tape & reel January 2007 Rev 3 1/14 www.st.com 14 Contents STS8C5H30L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STS8C5H30L 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value N-channel VDS Drain-source voltage (vgs = 0) VGS Gate- source voltage Unit P-channel 30 V ±16 ±16 V ID Drain current (continuos) at TC = 25°C single operating 8 4.2 A ID Drain current (continuos) at TC = 100°C single operating 6.4 3.1 A IDM (1) Drain current (pulsed) 32 16.8 A PTOT Total dissipation at TC = 25°C dual operating Total dissipation at TC = 25°C single operating Tstg Storage temperature Tj Operating junction temperature 1.6 2 W W -55 to 150 °C 150 °C 1. Pulse width limited by safe operating area For the P-channel MOSFET actual polarity of voltages and current has to be reversed Table 2. Rthj-a Tl Thermal data Thermal resistance junction-ambient single operating Thermal resistance junction-ambient dual operating 62.5 78 °C/W °C/W Maximum lead temperature for soldering purpose 300 °C 3/14 Electrical characteristics 2 STS8C5H30L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source Breakdown voltage ID = 250 µA, VGS = 0 n-ch p-ch VDS = Max rating n-ch 1 µA VDS=Max rating, TC=125°C p-ch 10 µA ±100 ±100 nA nA 1.6 2.5 V V 0.018 0.045 0.020 0.070 0.022 0.055 0.025 0.075 Ω Ω Ω Ω Typ. Max. Unit IDSS Zero gate voltage Drain current (VGS = 0) IGSS Gate-body leakage current (VDS = 0) VGS = ±16V VGS = ±16V n-ch p-ch Gate threshold voltage VDS = VGS, ID = 250µA n-ch p-ch Static drain-source on resistance VGS = 10V, ID = 4A VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 4A VGS = 4.5V, ID = 2.5A n-ch p-ch n-ch p-ch VGS(th) RDS(on) Table 4. Typ. Max. 30 30 1 1 Unit V V Dynamic Symbol Parameter gfs (1) Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 15V, ID= 4A VDS = 15V, ID= 2.5A VDS = 25V, f = 1 MHz, VGS = 0 N-channel VDD=24V ID=8A VGS=5V P-channel VDD = 24V ID = 4A VGS= 5V (see Figure 26) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5. 4/14 Min. Min. n-ch p-ch 8.5 10 S S n-ch p-ch 857 1350 pF pF n-ch p-ch 147 490 pF pF n-ch p-ch 20 130 pF pF n-ch p-ch 7 12.5 n-ch p-ch 2.5 5 nC nC n-ch p-ch 2.3 3 nC nC 10 16 nC nC STS8C5H30L Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Table 6. Symbol Switching times Parameter Test conditions Turn-on delay time Rise time N-channel VDD = 15V, ID = 4A RG=4.7 Ω, VGS = 4.5V P-channel VDD = 15V, ID = 2A RG=4.7 Ω, VGS = 4.5V (see Figure 25) Turn-off delay time Fall time N-channel VDD = 15V, ID = 4A RG=4.7 Ω, VGS = 4.5V P-channel VDD = 15V, ID = 2A RG=4.7 Ω, VGS = 4.5V (see Figure 25) Min. Typ. Max. Unit n-ch p-ch 12 25 ns ns n-ch p-ch 14.5 35 ns ns n-ch p-ch 23 125 ns ns n-ch p-ch 8 35 ns ns Source drain diode Parameter Test conditions Min Typ. Max Unit ISD Source-drain current n-ch p-ch 8 5 A A ISDM (1) Source-drain current (pulsed) n-ch p-ch 32 20 A A VSD (2) Forward on voltage ISD = 8A, VGS = 0 ISD = 5A, VGS = 0 n-ch p-ch 1.5 1.2 V V Reverse recovery time Reverse recovery charge Reverse recovery current N-channel ISD = 8A, di/dt = 100A/µs VDD=15 V,Tj =150 oC P-channel ISD = 5 A, di/dt = 100A/µs VDD=15 V, Tj =150 oC (see Figure 27) n-ch p-ch n-ch p-ch n-ch p-ch trr Qrr IRRM 15 45 5.7 36 0.76 1.6 ns ns nC nC A A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/14 Electrical characteristics STS8C5H30L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area n-ch Figure 2. Thermal impedance n-ch Figure 3. Output characteristics n-ch Figure 4. Transfer characteristics n-ch Figure 5. Transconductance n-ch Figure 6. Static drain-source on resistance nch 6/14 STS8C5H30L Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. n-ch Figure 9. Normalized gate threshold voltage vs. temperature n-ch Figure 11. Source-drain diode forward characteristics n-ch Capacitance variations n-ch Figure 10. Normalized on resistance vs. temperature n-ch Figure 12. Normalized breakdown voltage vs. temperature n-ch 7/14 Electrical characteristics STS8C5H30L Figure 13. Safe operating area p-ch Figure 14. Thermal impedance p-ch Figure 15. Output characteristics p-ch Figure 16. Transfer characteristics p-ch Figure 17. Transconductance p-ch Figure 18. Static drain-source on resistance pch 8/14 STS8C5H30L Electrical characteristics Figure 19. Gate charge vs. gate-source voltage Figure 20. Capacitance variations p-ch p-ch Figure 21. Normalized gate threshold voltage vs. temperature p-ch Figure 22. Normalized on resistance vs. temperature p-ch Figure 23. Source-drain diode forward characteristics p-ch Figure 24. Normalized breakdown voltage vs. temperature p-ch 9/14 Test circuit 3 STS8C5H30L Test circuit Figure 25. Switching times test circuit for resistive load Figure 26. Gate charge test circuit Figure 27. Test circuit for inductive load Figure 28. Unclamped Inductive load test switching and diode recovery times circuit Figure 29. Unclamped inductive waveform 10/14 Figure 30. Switching time waveform STS8C5H30L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 11/14 Package mechanical data STS8C5H30L SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 3.8 4.0 0.14 L 0.4 1.27 0.015 S 0.244 0.050 F M 12/14 MIN. 0.6 0.157 0.050 0.023 8 (max.) STS8C5H30L 5 Revision history Revision history Table 7. Revision history Date Revision Changes 17-Sep-2004 1 First revision 31-Oct-2006 2 The document has been reformatted 30-Jan-2007 3 typo mistake on Table 1. 13/14 STS8C5H30L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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