STMICROELECTRONICS STTH3R06S

STTH3R06
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
3A
VRRM
600 V
IR (max)
100 µA
Tj
175°C
VF (typ)
1.0 V
trr (typ)
35 ns
A
FEATURES AND BENEFITS
■
■
■
■
K
DO-201AD
STTH3R06
Ultrafast switching
Low forward voltage drop
Low thermal resistance
Low leakage current (platinium doping)
DESCRIPTION
The STTH3R06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, inverters and as a free wheeling
diode.
SMB
STTH3R06U
SMC
STTH3R06S
Table 2: Order Codes
Part Number
STTH3R06
STTH3R06RL
STTH3R06U
STTH3R06S
September 2004
Marking
STTH3R06
STTH3R06
R06U
R6S
REV. 2
1/9
STTH3R06
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS)
Unit
600
V
10
A
3
A
55
45
-65 to + 175
A
°C
175
°C
Maximum
Unit
20
°C/W
RMS forward voltage
IF(AV)
Average forward current
δ = 0.5
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
Value
DO-201AD
SMB
SMC
DO-201AD
SMB / SMC
Tl = 80°C
Tl = 55°C
Tl = 80°C
tp = 10ms
sinusoidal
Maximum operating junction temperature
Table 4: Thermal Parameters
Symbol
Rth(j-l)
Rth(j-a)
Parameter
Junction to lead
DO-201AD
Junction to ambient (see fig. 13)
L = 10 mm
SMB
25
SMC
20
DO-201AD
L = 10 mm
75
°C/W
Table 5: Static Electrical Characteristics
Symbol
IR
Parameter
Reverse leakage current
Test conditions
Tj = 25°C
Min.
VR = VRRM
Tj = 150°C
VF
Forward voltage drop
Tj = 25°C
Typ
15
Max.
Unit
3
µA
100
IF = 3A
1.7
Tj = 150°C
1.0
V
1.25
2
To evaluate the conduction losses use the following equation: P = 1.03 x IF(AV) + 0.09 IF (RMS)
Table 6: Dynamic Characteristics
Symbol
Parameter
trr
Reverse recovery
time
Tj = 25°C
tfr
Forward recovery
time
Tj = 25°C
VFP
Forward recovery
voltage
2/9
Test conditions
Min. Typ Max. Unit
IF = 0.5A IRR = 0.25A IR = 1A
30
ns
IF = 3A
dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
100
ns
IF = 3A
10
V
IF = 1A dIF/dt = -50 A/µs VR =30V
dIF/dt = 100 A/µs
35
STTH3R06
Figure 1: Conduction losses versus average
current
Figure 2: Forward voltage drop versus forward
current
IFM(A)
P(W)
50
5.0
δ = 0.1 δ = 0.2
δ = 0.05
4.5
δ = 0.5
45
4.0
3.5
35
3.0
30
2.5
25
2.0
20
1.5
Tj=150°C
(maximum values)
40
δ=1
Tj=150°C
(typical values)
Tj=25°C
(maximum values)
15
T
1.0
10
0.5
δ=tp/T
IF(AV)(A)
5
tp
0.0
VFM(V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
printed circuit FR4, Lleads = 10mm, SCU=1cm2)
0.0
0.5
1.0
1.5
2.0
2.5
Figure 4: Peak reverse recovery current
versus dI F /dt (typical values)
VR=400V
Tj=125°C
12
IF=2 x IF(AV)
11
0.8
10
0.7
9
0.6
8
IF=IF(AV)
IF=0.5 x IF(AV)
7
SMC
SCu = 1cm2
6
IF=0.25 x IF(AV)
5
SMB
SCu = 1cm2
0.3
4.0
13
0.9
0.4
3.5
IRM(A)
Zth(j-a)/Rth(j-a)
1.0
0.5
3.0
4
DO-201AD
Lleads = 10mm
Single pulse
0.2
3
2
0.1
tp(s)
1
0.0
dIF/dt(A/µs)
0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5: Reverse recovery time versus dIF/dt
(typical values)
0
50
100
150
200
250
300
350
400
450
500
Figure 6: Reverse recovery charges versus
dIF/dt (typical values)
Qrr(nC)
trr(ns)
450
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
VR=400V
Tj=125°C
VR=400V
Tj=125°C
400
IF=2 x IF(AV)
350
IF=2 x IF(AV)
300
IF=IF(AV)
IF=0.5 x IF(AV)
250
IF=IF(AV)
200
IF=0.5 x IF(AV)
150
100
50
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
200
250
300
350
400
450
500
3/9
STTH3R06
Figure 7: Softness factor versus dIF/dt (typical
values)
S factor
1.0
3.0
S factor
0.9
IF=IF(AV)
VR=400V
Tj=125°C
2.5
Figure 8: Relative variations of dynamic
parameters versus junction temperature
IRM
0.8
0.7
2.0
0.6
QRR
0.5
1.5
0.4
0.3
1.0
IF=IF(AV)
VR=400V
Reference: Tj=125°C
0.2
0.5
0.1
dIF/dt(A/µs)
0.0
Tj(°C)
0.0
25
0
50
100
150
200
250
300
350
400
450
50
75
100
125
500
Figure 9: Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10: Forward recovery time versus dIF/dt
(typical values)
tfr(ns)
VFP(V)
200
20
IF=IF(AV)
Tj=125°C
18
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
180
16
160
14
140
12
120
10
100
8
80
6
60
4
40
2
20
dIF/dt(A/µs)
0
dIF/dt(A/µs)
0
0
20
40
60
80
100
120
140
160
180
200
Figure 11: Junction capacitance versus
reverse voltage applied (typical values)
0
20
40
60
80
100
120
140
160
180
200
Figure 12: Thermal resistance junction to
ambient versus copper surface under lead
(epoxy FR4, eCU=35µm) (DO-201AD)
Rth(j-a)(°C/W)
C(pF)
80
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
70
60
DO-201AD
50
40
10
30
20
10
SCU(cm²)
VR(V)
1
0
1
4/9
10
100
1000
0
1
2
3
4
5
6
7
8
9
10
STTH3R06
Figure 13: Thermal resistance junction to
ambient versus copper surface under lead
(epoxy FR4, eCU=35µm) (SMB / SMC)
Figure 14: Thermal resistance versus lead
length
Rth(j-a)(°C/W)
Rth(°C/W)
110
100
100
90
90
80
DO-201AD
80
Rth(j-a)
70
SMB
70
60
60
SMC
50
50
40
40
Rth(j-l)
30
30
20
20
10
10
SCU(cm²)
Llead(mm)
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5
10
15
20
25
5/9
STTH3R06
Figure 15: SMB Package Mechanical Data
DIMENSIONS
REF.
E1
D
E
A1
A2
C
L
b
Figure 16: SMB Foot Print Dimensions
(in millimeters)
2.3
1.52
6/9
2.75
1.52
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
1.95
2.20
0.077
0.087
c
0.15
0.41
0.006
0.016
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
D
3.30
3.95
0.130
0.156
L
0.75
1.60
0.030
0.063
STTH3R06
Figure 17: SMC Package Mechanical Data
DIMENSIONS
REF.
E1
D
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
2.90
3.2
0.114
0.126
c
0.15
0.41
0.006
0.016
E
7.75
8.15
0.305
0.321
E1
6.60
7.15
0.260
0.281
E2
4.40
4.70
0.173
0.185
D
5.55
6.25
0.218
0.246
L
0.75
1.60
0.030
0.063
E
A1
A2
C
L
b
Figure 18: SMC Foot Print Dimensions
(in millimeters)
3.3
2.0
4.2
2.0
7/9
STTH3R06
Figure 19: DO-201AD Package Mechanical Data
DIMENSIONS
B
note 1
A
E
B
E
ØD
ØC
REF.
Millimeters
Min.
note 1
A
B
C
D
E
ØD
Inches
Max.
Min.
9.50
25.40
Max.
0.374
1.000
5.30
1.30
1.25
0.209
0.051
0.049
1 - The lead diameter ø D is not controlled over zone E
note 2
- The minimum axial length within which the device
NOTES 2may
be placed with its leads bent at right angles is
0.59"(15 mm)
Table 7: Ordering Information
■
■
■
Ordering type
Marking
Package
Weight
Base qty
STTH3R06
STTH3R06-RL
STTH3R06U
STTH3R06S
STTH3R06
STTH3R06
3R6U
R6S
DO-201AD
DO-201AD
SMB
SMC
1.12 g
1.12 g
0.11 g
0.243 g
600
1900
2500
2500
Epoxy meets UL94, V0
Band indicated cathode (DO-201AD)
Bending method: see application note AN1471 (DO-201AD)
Table 8: Revision History
Date
March-2003
07-Sep-2004
8/9
Revision
1
2
Description of Changes
First issue
SMB and SMC packages added
Delivery
mode
Ammopack
Tape & reel
Tape & reel
Tape & reel
STTH3R06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
9/9