STTH6006TV Turbo 2 ultrafast - high voltage rectifier Main product characteristics IF(AV) 2 x 30 A VRRM 600 V Tj 150° C VF (typ) 1.1 V trr (max) 50 ns A1 K1 A2 K2 A1 K1 A2 Features and benefits K2 ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switching losses ■ Insulated voltage: 2500 VRMS ■ Typical package capacitance: 45 pF ISOTOP STTH6006TV1 Description Order codes The STTH6006TV1 uses ST Turbo2 600V technology. This device is specially suited for use in switching power supplies, and industrial applications such as rectification and PFC boost diode. Table 1. Marking STTH6006TV1 STTH6006TV1 Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward current 100 A 30 A 210 A -55 to + 150 °C 150 °C IF(AV) Average forward current, δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Storage temperature range Tj 1. Part Number Per diode Maximum operating junction temperature(1) Tc = 70° C dP tot thermal runaway condition for a diode on its own heatsink 1 --------------- < -------------------------dT R j th ( j – a ) May 2006 Rev 1 1/7 www.st.com Characteristics 1 STTH6006TV Characteristics Table 2. Thermal parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Value Per diode 1.6 Total 0.85 Unit ° C/W 0.1 When the diodes are used simultaneously: ∆Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Symbol Static electrical characteristics Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25° C Tj = 125° C Tj = 25° C Tj = 150° C Min. Typ Max. Unit 25 VR = VRRM µA 80 800 1.85 IF = 30 A V 1.10 1.40 Typ Max. 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.07 x IF(AV) + 0.011 IF2(RMS) Table 4. Symbol trr IRM tfr VFP 2/7 Dynamic characteristics Parameter Reverse recovery time Test conditions Min. IF = 0.5 A, Irr = 0.25 A, IR = 1 A, Tj = 25° C Unit 50 ns IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C 50 70 Reverse recovery current IF = 30 A, dIF/dt = -100 A/µs, VR = 400 V, Tj = 125° C 8 11 Forward recovery time dIF/dt = 100 A/µs IF = 30 A VFR = 1.1 x VFmax, Tj = 25° C Forward recovery voltage IF = 30 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax, Tj = 25° C 500 2.5 ns V STTH6006TV Figure 1. Characteristics Conduction losses versus average current Figure 2. Forward voltage drop versus forward current IFM(A) P(W) 200 55 50 45 180 δ = 0.5 δ = 0.2 δ = 0.1 160 40 35 Tj=150°C (typical values) 140 δ=1 δ = 0.05 120 30 Tj=25°C (maximum values) 100 25 Tj=150°C (maximum values) 80 20 15 60 T 40 10 5 IF(AV)(A) δ=tp/T 20 tp 0 VFM(V) 0 0 5 Figure 3. 10 15 20 25 30 35 0.0 0.2 0.4 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 30 1.0 VR=600V Tj=125°C Single pulse 0.9 25 0.8 IF=2 x IF(AV) IF=IF(AV) 0.7 20 IF=0.5 x IF(AV) 0.6 IF=0.25 x IF(AV) 15 0.5 0.4 10 0.3 0.2 5 0.1 tp(s) dIF/dt(A/µs) 0 0.0 1.E-03 Figure 5. 1.E-02 1.E-01 0 1.E+00 Reverse recovery time versus dIF/dt (typical values) 50 Figure 6. 100 150 200 250 300 350 400 450 500 Reverse recovery charges versus dIF/dt (typical values) Qrr(nC) trr(ns) 3.0 200 VR=600V Tj=125°C VR=600V Tj=125°C 2.5 150 IF=2 x IF(AV) IF=IF(AV) IF=2 x IF(AV) 2.0 IF=0.5 x IF(AV) IF=IF(AV) 1.5 100 IF=0.5 x IF(AV) 1.0 50 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0.0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 3/7 Characteristics Figure 7. STTH6006TV Softness factor versus dIF/dt (typical values) Figure 8. S factor Relative variations of dynamic parameters versus junction temperature 2.50 0.6 IF ≤ 2xIF(AV) VR=600V Tj=125°C 0.5 IF=IF(AV) VR=600V Reference: Tj=125°C 2.25 2.00 S factor 1.75 0.4 1.50 1.25 0.3 1.00 0.75 0.2 IRM 0.50 0.1 dIF/dt(A/µs) 25 0 50 Figure 9. 100 150 200 250 300 350 400 450 50 75 100 125 500 Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) tfr(ns) VFP(V) 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Tj(°C) 0.00 0.0 800 IF=IF(AV) Tj=125°C IF=IF(AV) VFR=1.5 x VF max. Tj=125°C 700 600 500 400 300 200 100 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 100 200 300 400 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C 100 VR(V) 10 1 4/7 QRR 0.25 10 100 1000 0 100 200 300 400 500 STTH6006TV 2 Package mechanical data Package mechanical data Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 5. ISOTOP dimensions Dimensions Ref. Millimeters Inches E G2 A Max Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 A1 B 7.8 8.20 0.307 0.323 E2 C 0.75 0.85 0.030 0.033 F C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 C2 F1 P1 D Min. C G S B D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 G1 F1 4.60 5.00 0.181 0.197 E1 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 ØP In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information 3 STTH6006TV Ordering information Part Number Marking STTH6006TV1 STTH6006TV1 4 6/7 Package Weight Base qty Delivery mode ISOTOP 27 g (without screws) 10 (with screws) Tube Revision history Date Revision 18-May-2006 1 Description of Changes First issue. STTH6006TV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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