<zy\£.uj J. , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1941 Silicon PNP Power Transistor I I \ •-< DESCRIPTION • Low Collector Saturation Voltage: VCE(sat)=- 2.0V(Min) @lc=- 7A • Good Linearity of hFE 3 • Complement to Type 2SC51 98 APPLICATIONS • Power amplifier applications • Recommend for 70W high fidelity audio frequency M amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V 2. COLLECTOR 3. EMITTER TO-3PN package W I .fy I I K 3 PIN 1.BASE ^ r! jf f : ': ffl I p -*it*-J VCEO Collector-Emitter Voltage -140 V -*• »iii*-'D *--R mm Emitter-Base Voltage -5 V Ic Collector Current-Continuous -10 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @T.-25°r 100 W Tj Junction Temperature 150 °C -55-150 •c VEBO Tstg Storage Temperature Range DIM A B C D F F G H J K L N MIN MAX 19.90 20.10 15.50 15.70 4.70 4.90 0.90 1.10 1 90 2 10 3.40 3.60 3.10 2.90 3.20 3.40 0.595 0.605 20.50 20.70 1.90 2.10 10.89 10.91 q 4.90 J 5.10 R 3.35 3.45 S 1.995 2.005 u 5.90 >.1 \ Y I 9.90 1<>.1 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ot'going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SA1941 ELECTRICAL CHARACTERISTICS Tc=25°C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage l c =-50mA; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -7.0A; IB= -0.7A -2.0 V VsE(on) Base-Emitter On Voltage lc=-5A;V CE =-5V -1.5 V ICBO Collector Cutoff Current V CB =-140V; IE=0 -5 WA IEBO Emitter Cutoff Current VEB= -5V; lc=0 -5 nA hpE-1 DC Current Gain lc=-1A;V CE =-5V 55 hpE-2 DC Current Gain lc= -5A ; VCE= -5V 35 COB Output Capacitance l E =0;VcB=-10V;f te st= 1.0MHz 320 pF Current-Gain— Bandwidth Product lc=-1A; VCE=-5V 30 MHz ft -140 V 160