^zmi-L-onauctoi L/^ioaucta, Line. TELEPHONE: (973) 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1880 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO<SUS)= -80(V)(Min.) • Low Collector Saturation Voltage :VCE(satr -0.3(V)(Max.)@lc= -5A • Large Current Capability-lc= -10A APPLICATIONS • Designed for use as a driver in DC/DC converters and actuators. PIN 1.BASE 2. COLLECTOR ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER 3. EMITTER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Em itter-Base Voltage -7 V Collector Current-Continuous -10 A Collector Current-Peak -20 A Base Current-Continuous -1.5 A Ic ICM IB IBM Base Current-Peak -2 A PC Total Power Dissipation @ TC=25'C 25 W Junction Temperature 150 •c -55-150 •c Tj Storage Temperature Range Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5 'CM/ 1 23 rrO-220 package mm MAX DIM MIN A 16.70 17.00 9,80 10.20 B C 4.40 4.80 0.90 D 0.70 3.20 3.40 F H 2.50 2.70 J 0.50 0.70 K 13.80 14.20 1.30 L 1.10 6,18 N 4.9* 4.0O 4.40 Q R 2.80 2.60 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SA1880 ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified CONDITIONS TYP. UNIT SYMBOL PARAMETER VcEO(SUS) Collector-Emitter Sustaining Voltage I C =-0.1A;I B =0 VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A -0.3 V VBE(sat) Base-Emitter Saturation Voltage lc= -5A; la= -0.5A -1.2 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -100 uA I CEO Collector Cutoff Current VCE= -80V; IB= 0 -100 nA IEBO Emitter Cutoff Current VEB= -7V; |c= 0 -100 wA hFE DC Current Gain lc= -5A; VCE= -2V Current-Gain— Bandwidth Product lo=-1A;V C E=-10V fr M1N MAX -80 V 70 50 MHz Switching Times ton Turn-on Time Utg Storage Time tf Fall Time lc= -5A, IB1= -\BZ= -0.5A, RL= 5 fi , VBB2= -4V; 0.3 us 1.5 V- S 0.2 ys