STB5N62K3, STD5N62K3, STF5N62K3 STP5N62K3, STU5N62K3 N-channel 620 V, 1.28 Ω, 4.2 A SuperMESH3™ Power MOSFET D²PAK, DPAK,TO-220FP, TO-220 and IPAK Features Order codes VDSS RDS(on) max. ID Pw 3 3 STB5N62K3 STD5N62K3 STF5N62K3 70 W 620 V < 1.6 Ω 4.2 A 1 2 3 1 DPAK TO-220 2 1 TO-220FP 25 W STP5N62K3 STU5N62K3 70 W 3 3 ■ 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected 2 1 1 IPAK D²PAK Figure 1. Internal schematic diagram Application D(2) Switching applications Description G(1) These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. AM01476v1 Device summary Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3 October 2010 S(3) Marking Packages Packaging 5N62K3 D²PAK DPAK TO-220FP TO-220 IPAK Tape and reel Tape and reel Tube Tube Tube Doc ID 17361 Rev 2 1/19 www.st.com 19 Contents STB/D/F/P/U5N62K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 .............................................. 9 Doc ID 17361 Rev 2 STB/D/F/P/U5N62K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, DPAK TO-220FP D²PAK, IPAK VDS Drain- source voltage 620 VGS Gate- source voltage ± 30 ID Drain current (continuous) at TC = 25 °C IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C V 4.2 Drain current (continuous) at TC = 100 °C ID V 4.2 3 3 (1) A (1) A 16.8 16.8 (1) A 70 25 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) 4.2 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 120 mJ Peak diode recovery voltage slope 12 V/ns Diode reverse recovery current slope 400 A/µs dv/dt(3) (3) di/dt VISO Insulation withstand voltage (AC) TJ Tstg Operating junction temperature Storage temperature 2500 - 55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ ID, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 D²PAK Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb Thermal resistance junction-pcb max TJ Maximum lead temperature for soldering purpose IPAK TO-220FP DPAK 1.79 62.50 5 62.50 30 300 Doc ID 17361 Rev 2 1.79 °C/W 50 300 °C/W °C/W °C/W 3/19 Electrical characteristics 2 STB/D/F/P/U5N62K3 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 620 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±10 µA 3.75 4.5 V 1.28 1.6 Ω Min. Typ. Max. Unit - 680 50 8 - pF pF pF VGS = ± 20 V; VDS=0 VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance Table 5. Symbol 3 VGS = 10 V, ID = 2.1 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 Equivalent output capacitance VGS = 0, VDS = 0 to 496 V Rg Gate input resistance f=1 MHz open drain - 4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 496 V, ID = 4.2 A, VGS = 10 V (see Figure 20) - 26 4 16 - nC nC nC Ciss Coss Crss COSS eq(1) 16.6 pF 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/19 Doc ID 17361 Rev 2 STB/D/F/P/U5N62K3 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 310 V, ID = 4.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Min. Typ. - 12 8 40 21 Max Unit - ns ns ns ns Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Min. Typ. Max Unit - 4.2 16.8 A A 1.5 V Forward on voltage ISD = 4.2 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.2 A, di/dt = 100 A/µs VDD= 60 V (see Figure 21) - 290 1900 13 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.2 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 21) - 320 2200 14 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1 mA (open drain) Min. Typ. 30 - Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 17361 Rev 2 5/19 Electrical characteristics STB/D/F/P/U5N62K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK, TO-220 Figure 3. Thermal impedance for D²PAK, TO-220 Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for DPAK, IPAK AM08239v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 D S( on ) O Li per m at ite io d ni by n m this ax a R rea is 10µs 100µs 1 1ms 10ms 0.1 0.01 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for TO-220FP AM08241v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 on ) 100µs D S( O Li per m at ite io d ni by n m this ax a R rea is 10µs 1 1ms 10ms 0.1 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area for DPAK, IPAK AM08240v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 on ) 100µs D S( O Li per m at ite io d ni by n m this ax a R rea is 10µs 1 1ms 10ms 0.1 0.01 0.1 6/19 1 10 100 VDS(V) Doc ID 17361 Rev 2 STB/D/F/P/U5N62K3 Figure 8. Electrical characteristics Output characteristics Figure 9. AM08243v1 ID (A) 10 VGS=10V Transfer characteristics AM08244v1 ID (A) 7 7V VDS=15V 6 8 5 6 4 3 4 6V 2 2 1 0 0 5 10 20 15 5V VDS(V) 25 0 0 2 4 6 8 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM08245v1 VGS (V) VDS 12 VGS VDD=496V ID=4.2A 500 AM08246v1 RDS(on) (Ω) VGS=10V 1.38 1.36 10 400 8 300 1.34 1.32 1.30 6 200 4 100 2 1.28 1.26 1.24 0 0 5 10 15 20 25 0 30 Qg(nC) Figure 12. Capacitance variations 1.0 2.0 3.0 4.0 ID(A) Figure 13. Output capacitance stored energy AM08247v1 C (pF) 1.22 AM08248v1 Eoss (µJ) 4 1000 Ciss 3 100 2 Coss 10 Crss 1 0.1 1 10 100 VDS(V) Doc ID 17361 Rev 2 1 0 0 100 200 300 400 500 VDS(V) 7/19 Electrical characteristics STB/D/F/P/U5N62K3 Figure 14. Normalized gate threshold voltage vs temperature AM08249v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM08250v1 RDS(on) (norm) 1.10 2.5 1.00 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 25 -25 75 Figure 16. Source-drain diode forward characteristics -25 25 75 125 TJ(°C) Figure 17. Normalized BVDSS vs temperature AM08597v1 VSD (V) 0 -75 TJ(°C) 125 AM08596v1 BVDSS (norm) TJ=-50°C 1.0 1.10 0.9 1.05 0.8 TJ=25°C 0.7 1.00 TJ=150°C 0.6 0.95 0.5 0.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ISD(A) 0.90 -75 Figure 18. Maximum avalanche energy vs starting Tj AM08598v1 EAS (mJ) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 8/19 ID=4.2 A VDD=50 V 20 40 60 80 100 120 140 TJ(°C) Doc ID 17361 Rev 2 -25 25 75 125 TJ(°C) STB/D/F/P/U5N62K3 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 17361 Rev 2 10% AM01473v1 9/19 Package mechanical data 4 STB/D/F/P/U5N62K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/19 Doc ID 17361 Rev 2 STB/D/F/P/U5N62K3 Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 25. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 17361 Rev 2 11/19 Package mechanical data STB/D/F/P/U5N62K3 TO-252 (DPAK) mechanical data DIM. mm. min. ty p ma x . A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4. 70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 12/19 Doc ID 17361 Rev 2 STB/D/F/P/U5N62K3 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 5.20 5.40 b2 b4 0.95 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H Doc ID 17361 Rev 2 13/19 Package mechanical data STB/D/F/P/U5N62K3 TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S 14/19 Doc ID 17361 Rev 2 STB/D/F/P/U5N62K3 Package mechanical data D²PAK (TO-263) mechanical data mm. Dim. Min. A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ. 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max. 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 5.28 15.85 2.69 2.79 1.40 1.75 0.4 0° 8° 0079457_P Doc ID 17361 Rev 2 15/19 Package mechanical data 5 STB/D/F/P/U5N62K3 Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 16/19 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 Doc ID 17361 Rev 2 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STB/D/F/P/U5N62K3 Package mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. 0.075 0.082 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 Doc ID 17361 Rev 2 17/19 Revision history 6 STB/D/F/P/U5N62K3 Revision history Table 10. 18/19 Document revision history Date Revision Changes 09-Apr-2010 1 First release. 20-Oct-2010 2 – Added new package, mechanical data: IPAK; – Added new package, mechanical data: D²PAK; – Document status promoted from preliminary data to datasheet. Doc ID 17361 Rev 2 STB/D/F/P/U5N62K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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