X02xxxA SENSITIVE GATE SCR FEATURES IT(RMS) = 1.25A VDRM = 200V to 800V Low IGT < 200 µA K G A DESCRIPTION The X02xxxA series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required. TO92 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tl= 60°C 1.25 A IT(AV) Mean on-state current (180° conduction angle) Tl= 60°C 0.8 A ITSM Non repetitive surge peak on-state current (Tj initial = 25°C ) tp = 8.3 ms 25 A tp = 10 ms 22.5 I2t Value for fusing tp = 10 ms 2.5 A2s 30 A/µs - 40, + 150 - 40, + 125 °C 260 °C I2t dI/dt Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/µs. Tstg Tj Storage and operating junction temperature range Tl Symbol VDRM VRRM January 1995 Maximum lead temperature for soldering during 10s at 2mm from case Voltage Parameter Repetitive peak off-state voltage Tj = 125°C RGK = 1KΩ Unit B D M N 200 400 600 800 V 1/5 X02xxxA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 150 °C/W Rth(j-l) Junction to leads for DC 60 °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2 W PGM = 3 W (tp = 20 µs) IGM = 1.2 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol Sensitivity Test Conditions 02 IGT VD=12V (DC) RL=140Ω Tj= 25°C MIN MAX 200 Unit 03 05 20 20 200 50 µA VGT VD=12V (DC) RL=140Ω Tj= 25°C MAX 0.8 V VGD VD=VDRM RL=3.3kΩ RGK = 1 KΩ Tj= 125°C MIN 0.1 V IRG =10µA Tj= 25°C MIN 8 V tgd VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.1A/µs IG = 10mA Tj= 25°C TYP 0.5 µs IH IT= 50mA RGK = 1 KΩ Tj= 25°C MAX 5 mA IL IG=1mA RGK = 1 KΩ Tj= 25°C MAX 6 mA VTM ITM= 2.5A tp= 380µs Tj= 25°C MAX 1.45 V IDRM IRRM VD = VDRM RGK = 1 KΩ VR = VRRM Tj= 25°C MAX 5 µA Tj= 110°C MAX 200 µA dV/dt VD=67%VDRM RGK = 1 KΩ Tj= 110°C TYP tq ITM= 3 x IT(AV) VR =35V dI/dt=10A/µs tp=100µs dV/dt=2V/µs VD= 67%VDRM RGK = 1 KΩ Tj= 110°C MAX VRGM 15 20 15 100 ORDERING INFORMATION X 02 03 M A PACKAGE : A = TO92 SCR TOP GLASS CURRENT SENSITIVITY 2/5 VOLTAGE V/µs µs X02xxxA Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tlead). P (W) Tlead (oC) P (W) 1.2 1.2 360 -50 O Rth(j-l) 1.0 1.0 DC -70 0.8 = 180 = 120 0.6 = 90 0.4 = 60 0.2 o Rth(j-a) 0.6 -90 o 0.4 o -110 0.2 = 30 o 0.0 0 0.8 o I T(AV)(A) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 o Tamb ( C) 1.1 1.2 Fig.3 : Average on-state current versus lead temperature. 0.0 0 20 40 60 80 100 120 140 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) I T(AV) (A) 1.00 1.4 DC 1.2 1.0 0.8 0.10 o = 180 0.6 0.4 0.2 o tp (s) Tlead ( C) 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] 0.01 1E-3 1E-2 1E-1 1 E+0 1 E+1 1E +2 5 E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 25 o 10.0 9.0 Tj initial = 25 C 20 8.0 7.0 15 6.0 Igt 5.0 4.0 10 3.0 2.0 5 Ih 1.0 0.0 -40 Number of cycles Tj(oC) -20 0 20 40 60 80 100 120 140 0 1 10 100 100 0 3/5 X02xxxA Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms, and corresponding value of I2t. 100 Fig.8 : On-state characteristics (maximum values). I TSM (A). I2 t (A 2 s) I TM (A) Tj initial = 25oC 100 Tj initial o 25 C I TSM 10 10 Tj max 1 I2 t Tj max Vto =1.05V Rt =0.150 VTM (V) tp(ms) 1 1 10 4/5 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 X02xxxA PACKAGE MECHANICAL DATA TO92 (Plastic) REF. A a B A DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. 1.35 0.053 B C C D F D E E F a Min. Max. 4.7 2.54 0.185 0.100 4.4 4.8 12.7 0.173 0.189 0.500 3.7 0.146 0.45 0.017 Marking : Type number Weight : 0.2 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5