BTA08 BW/CW BTB08 BW/CW SNUBBERLESS TRIACS . .. . FEATURES HIGH COMMUTATION : (dI/dt)c > 7A/ms without snubber HIGH SURGE CURRENT : ITSM = 80A VDRM UP TO 800V BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION A1 A2 The BTA/BTB08 BW/CW triac family are high performance glass passivated chips technology. The SNUBBERLESS concept offer suppression of RC network and it is suitable for application such as phase control and static switching on inductive or resistive load. G TO220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM March 1995 Parameter Value Unit 8 A tp = 8.3 ms 85 A tp = 10 ms 80 I2t value tp = 10 ms 32 A2s Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 RMS on-state current (360° conduction angle) BTA Tc = 90 °C BTB Tc = 95 °C Non repetitive surge peak on-state current ( Tj initial = 25°C ) Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C 260 °C Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C BTA / BTB08-... BW/CW Unit 400 600 700 800 400 600 700 800 V 1/5 BTA08 BW/CW / BTB08 BW/CW THERMAL RESISTANCES Symbol Rth (j-a) Parameter Value Unit 60 °C/W BTA 4.4 °C/W BTB 3.3 BTA 3.3 BTB 2.5 Junction to ambient Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) °C/W GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V VGT VD=12V VGD (DC) (DC) RL =33Ω RL =33Ω Quadrant Tj=25°C Unit BW CW MIN 2 1 MAX 50 35 mA Tj=25°C I-II-III MAX 1.5 V VD=VDRM R L=3.3kΩ Tj=125°C I-II-III MIN 0.2 V tgt VD=VDRM IG = 500mA dIG/dt = 3A/µs Tj=25°C I-II-III TYP 2 µs IL IG=1.2 IGT Tj=25°C I-III TYP 40 - II TYP 80 - I-III MAX - 50 II MAX - 80 50 35 mA IH * IT= 500mA gate open Tj=25°C MAX VTM * ITM= 11A tp= 380µs Tj=25°C MAX 1.75 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA Tj=125°C MAX 2 Linear slope up to VD =67%VDRM gate open Tj=125°C MIN 500 250 TYP 750 500 Without snubber Tj=125°C MIN 7 4.5 TYP 14 9 dV/dt * (dI/dt)c * Rated Rated * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 I-II-III Suffix mA V/µs A/ms BTA08 BW/CW / BTB08 BW/CW ORDERING INFORMATION Package BTA (Insulated) BTB (Uninsulated) IT(RMS) VDRM / VRRM Sensitivity Specification A V BW CW 8 400 X X 600 X X 700 X X 800 X X 400 X X 600 X X 700 X X 800 X X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig.4 : RMS on-state current versus case temperature. 3/5 BTA08 BW/CW / BTB08 BW/CW Fig.5 : Relative variation of hermal impedance versus pulse duration. Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.9 : On-state characteristics (maximum values). 4/5 Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. BTA08 BW/CW / BTB08 BW/CW PACKAGE MECHANICAL DATA TO220AB Plastic REF. H A J G I D B F O P L C M = N = A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5