'J. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor 2SB1478 JZ 1 ^^^^^^B ini^i^ni DESCRIPTION -vw——^—W—t—* i • High DC Current Gain- p M 1.BASE i ii 1 2 3 : h FE =2000(Min)@l c =-2A • Low Collector Saturation Voltage- 2. COLLECTOR 3.BUIITTER TO-247 package : VCE(Sat)= -2.0V(Max.) @lc= 5A • Complement to Type 2SD2237 m— E-££ »' . ,..„ A' p r • I ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VcBO VCEO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE -100 -100 UNIT K i - : - ! '.\ !•* - - -J! 'FJPI^ % : fr-Y ;! n B fc. ^ '<:' 1:1)1 APPLICATIONS • Designed for power linear and switching applications. tK j : i V ^ V —*••* i-j »• -*-H ! ^ U v' b*--^ i*,- G -*- V mm Emitter-Base Voltage -5 V Ic Collector Current-Continuous -8 A PC Collector Power Dissipation @TC-25'C 60 W 150 •c -55-150 gc VEBO Junction Temperature T. Tstg Storage Temperature Range DIM A B C D E F G H J K P Q U V MIN 19.80 15,40 4.90 0.90 1.40 1.90 10.80 2.40 0.50 19.50 3.90 3.30 5.20 2.90 MAX 20.20 15.80 5.10 1.10 1.60 2.10 11.00 2.60 0.70 20.50 4.10 3.50 5.40 3.10 NJ Serni-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Darlington Power Transistor 2SB1478 ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA, I B =0 -100 V V(BR)CBO Collector-Base Breakdown Voltage lc=-50uA;l E =0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -2mA; lc=0 -5 V VcE(sat) Collector-Emitter Saturation Voltage IG= -5A, IB= -20mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage lc= -5A, IB= -20mA -2.5 V IcBO Collector Cutoff current VCB=-100V, I E =0 -10 uA IEBO Emitter Cutoff current VEB= -5V, lc= 0 -2 mA hFE DC Current Gain lc= -2A; VCE= -3V 2000 20000