STMICROELECTRONICS EMIF03

EMIF03-SIM03F3
3-line IPAD™, EMI filter including ESD protection
Features
■
EMI symmetrical (I/O) low-pass filter
■
high efficiency in EMI/ESD protection
■
lead-free package
■
very thin package
■
high reliability offered by monolithic integration
■
high reduction of parasitic elements through
integration and wafer level packaging
Complies with the following standards
■
■
■
Lead-free Flip-Chip package
(8 bumps)
Figure 1.
IEC 61000-4-2 level 4:
– ± 15 kV (air discharge)
– ± 8 kV (contact discharge)
IEC 61000-4-2 level 1:
– ± 2 kV (air discharge)
– ± 2 kV (contact discharge)
Pin configuration (bump side)
3
2
1
RST
in
RST
ext
CLK
in
GND
CLK
ext
B
Data
in
Vcc
Data
ext
C
A
ETSI 102.221 (configuration FIDI = 97)
Applications
Where EMI filtering in ESD sensitive equipment is
required:
■
mobile phones and communication systems
■
computers, printers and MCU Boards
Figure 2.
Configuration
C2
A3
100 Ω
R1
B3
Description
47 Ω
A2
B1
R2
C3
100 Ω
C1
R3
The EMIF03-SIM03F3 chip is a very low
capacitance EMI filter designed to suppress
EMI/RFI noise in all systems subjected to
electromagnetic interference.
B2
GND
This filter includes ESD protection circuitry, which
prevents damage to the protected device when
subjected to ESD surges up to 15 kV.
TM: IPAD is a trademark of STMicroelectronics.
October 2010
Doc ID 16798 Rev 2
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Electrical characteristics
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EMIF03-SIM03F3
Electrical characteristics
Table 1.
Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
Internal pins (A3, B3, C3):
ESD discharge IEC 61000-4-2, level 1, air discharge
ESD discharge IEC 61000-4-2, level 1, contact discharge
External pins (A2, B1, C1, C2):
ESD discharge IEC 61000-4-2, level 4, air discharge
ESD discharge IEC 61000-4-2, level 4, contact discharge
15
8
Pd
Line resistance power dissipation at 70 °C
60
mW
Top
Operating temperature range
- 40 to + 85
°C
Tstg
Storage temperature range
- 55 to 150
°C
VPP
Figure 3.
2
2
kV
Electrical characteristics - definitions
I
Symbol
VBR =
IRM =
VRM =
Cline =
Table 2.
Parameter
Breakdown voltage
Leakage current @ VRM
Stand-off voltage
Line capacitance
IR
IRM
IRM
IR
V
VRM VBR
Electrical characteristics - values (Tamb = 25 °C)
Symbol
Test conditions
VBR
IR = 1 mA
IRM
VRM = 3 V per line
Min.
Typ.
Max.
14
Unit
V
50
200
nA
R1, R3
Tolerance ± 20%
80
100
120
Ω
R2
Tolerance ± 20%
37.6
47
56.4
Ω
8
10
12
pF
Cline
2/8
VBR VRM
Vline = 0 V, Vosc = 30 mV, F = 1 MHz
(measured under zero light conditions)
Doc ID 16798 Rev 2
EMIF03-SIM03F3
Figure 4.
Electrical characteristics
Attenuation measurement A2 - A3
Figure 5.
Attenuation measurement B1 - B3
S21 (dB)
S21 (dB)
0.00
0.00
-10.00
-10.00
-11.6 dB @ 900 MHz
-14.9 dB @ 900 MHz
-20.00
-18.4 dB @ 1.8 GHz
-20.00
-23.1 dB @ 1.8 GHz
-30.00
-30.00
-40.00
-40.00
F (Hz)
F (Hz)
-50.00
-50.00
100.0k
Figure 6.
0.00
1.0M
10.0M
100.0M
100.0k
1.0G
Attenuation measurement C1 - C3
Figure 7.
S21 (dB)
0.00
1.0M
10.0M
100.0M
1.0G
Analog crosstalk measurement
A2 - B3
(30 kHz < F < 6 GHz > 11.8 dB)
Crosstalk (dB)
-20.00
-10.00
-14.8 dB @ 900 MHz
-40.00
-20.00
-22.8 dB @ 1.8 GHz
-30.00
-60.00
-40.00
-80.00
F (Hz)
-50.00
100.0k
Figure 8.
1.0M
10.0M
100.0M
F (Hz)
-100.00
100.0k
1.0G
1.0M
10.0M
100.0M
1.0G
Analog crosstalk measurement A2 - C3 (30 kHz < F < 6 GHz > 13.8 dB)
0.00
Crosstalk (dB)
-20.00
-40.00
-60.00
-80.00
F (Hz)
-100.00
100.0k
1.0M
10.0M
100.0M
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1.0G
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Electrical characteristics
Figure 9.
EMIF03-SIM03F3
Digital crosstalk measurements
Figure 10. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one line
20 V/Div
1 V/Div
trise (10-90%) = 2.5 ns
IN
IN
C2
20 ns/Div
100 ns/Div
10 V/Div
500 mV/Div
OUT
175 mV
OUT
20 ns/Div
C3
100 ns/Div
Figure 11. ESD response to IEC 61000-4-2
(-15 kV air discharge) on one line
C2
Figure 12. Line capacitance versus applied
voltage
21
10 V/Div
C (pF)
18
IN
15
100 ns/Div
C3
10 V/Div
12
9
OUT
6
3
100 ns/Div
Vr (V)
0
0
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EMIF03-SIM03F3
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Ordering information scheme
Ordering information scheme
Figure 13. Ordering information scheme
EMIF
yy
-
xxx zz
Fx
EMI filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
F = Flip Chip
x = 3: lead-free, pitch = 400 µm
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Package information
3
EMIF03-SIM03F3
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 14. Package dimensions
400 µm ± 40
400 µm ± 40
605 µm ± 55
1.14 mm ± 30 µm
255 µm ± 40
170 µm
170 µm
1.14 mm ± 30 µm
Figure 15. Footprint
Figure 16. Marking
Dot, ST logo
ECOPACK status
xx = marking
z = manufacturing location
yww = datecode
(y = year
ww = week)
Copper pad Diameter:
220 µm recommended
260 µm maximum
Solder mask opening:
300 µm minimum
Solder stencil opening :
220 µm recommended
x x z
y ww
Dot identifying Pin A1 location
Ø 1.55 ± 0.1
4.0 ± 0.1
2.0 ± 0.05
3.5 ± 0.1
1.24
xxz
yww
STE
xxz
yww
1.24
STE
xxz
yww
STE
8.0 ± 0.3
0.20 ± 0.02
4.0 ± 0.1
0.69 ± 0.05
All dimensions in mm
6/8
1.75 ± 0.1
Figure 17. Flip-Chip tape and reel specification
User direction of unreeling
Doc ID 16798 Rev 2
EMIF03-SIM03F3
4
Ordering information
Ordering information
Table 3.
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
EMIF03-SIM03F3
JH
Flip Chip
1.8 mg
5000
Tape and reel 7”
Note:
More information is available in the application notes:
AN2348: “STMicroelectronics 400 micro-metre Flip Chip: package description and
recommendation for use”
AN1751: “EMI filters: recommendations and measurements”
5
Revision history
Table 4.
Document revision history
Date
Revision
Changes
03-May-2010
1
Initial release.
12-Oct-2010
2
Updated Figure 2 and value IRM in Table 2.
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EMIF03-SIM03F3
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