D
TO-220
G
APT1004RKN
APT1004R2KN
S
1000V 3.6A 4.00 Ω
1000V 3.5A 4.20 Ω
POWER MOS IV ®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: T C = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol Parameter
V DSS
APT1004R2KN
APT1004RKN
UNIT
1000
1000
Volts
3.5
3.6
Amps
14.0
14.4
Amps
Drain-Source Voltage
ID
Continuous Drain Current
IDM
Pulsed Drain Current
V GS
Gate-Source Voltage
±30
Volts
PD
Total Power Dissipation @ TC = 25°C, Derate Above 25°C
125
Watts
-55 to 150
°C
1
TJ,TSTG Operating and Storage Junction Temperature Range
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
BVDSS
IDSS
IGSS
ID(ON)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
MIN
MAX
1000
Volts
APT1004R2KN
1000
Volts
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
(VDS = 0.8 VDSS, VGS = 0V, T C = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, V DS = 0V)
±100
On State Drain Current
2
(VDS > ID(ON) x R DS (ON) Max, VGS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, ID = 0.5 ID [Cont.])
2
UNIT
APT1004RKN
µA
nA
APT1004RKN
3.6
Amps
APT1004R2KN
3.5
Amps
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
RDS(ON)
TYP
4
Volts
APT1004RKN
2
4.00
Ohms
APT1004R2KN
4.20
Ohms
MAX
UNIT
1.00
°C/W
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
RθJC
Junction to Case
RθJA
Junction to Ambient
80
°C/W
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
300
°C
TL
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-0036 Rev C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT1004R/1004R2KN
DYNAMIC CHARACTERISTICS
Symbol Characteristic
MIN
Test Conditions
TYP
MAX
UNIT
Ciss
Input Capacitance
VGS = 0V
805
950
pF
Coss
Output Capacitance
115
160
pF
Crss
Reverse Transfer Capacitance
VDS = 25V
f = 1 MHz
37
60
pF
Qg
Total Gate Charge
35
55
nC
4.3
6.5
nC
18
27
nC
10
20
ns
9
18
ns
32
48
ns
23
46
ns
TYP
MAX
UNIT
APT1004RKN
3.6
Amps
APT1004R2KN
3.5
Amps
APT1004RKN
14.4
Amps
APT1004R2KN
14.0
Amps
1.3
Volts
3
V GS = 10V, ID = ID [Cont.]
Q gs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
V DD = 0.5 VDSS
Turn-on Delay Time
td(on)
VDD = 0.5 VDSS
Rise Time
tr
ID = ID [Cont.], VGS = 15V
Turn-off Delay Time
td(off)
RG = 1.8Ω
Fall Time
tf
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
MIN
VSD
Diode Forward Voltage
t
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs)
150
290
580
ns
Reverse Recovery Charge
0.8
1.65
3.3
µC
Test Conditions / Part Number
MIN
TYP
MAX
UNIT
125
Watts
125
Watts
APT1004RKN
14.4
Amps
APT1004R2KN
14.0
Amps
rr
Q rr
2
(VGS = 0V, IS = -ID [Cont.])
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic
SOA1
Safe Operating Area
V DS = 0.4 VDSS , IDS = PD / 0.4 VDSS, t = 1 Sec.
SOA2
Safe Operating Area
IDS = I D [Cont.],
ILM
Inductive Current Clamped
VDS = PD / ID [Cont.], t = 1 Sec.
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
θ JC
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
Note:
PDM
0.02
0.01
SINGLE PULSE
0.01
0.004
10-5
t1
t2
Duty Factor D = t1/t
2
Peak TJ = PDM x ZθJC + TC
Z
050-0036 Rev C
, THERMAL IMPEDANCE (°C/W)
1.0
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT1004R/1004R2KN
5
5
GS
5V
4
3
4.5V
2
1
4V
0
T = -55°C
J
V > I (ON) x R (ON)MAX.
DS D
DS
230µ SEC. PULSE TEST
T = +25°C
J
T = +125°C
J
6
4
2
T = +125°C
J
T = -55°C
J
T = +25°C
J
0
2
4
6
8
VGS , GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
APT1004RKN
APT1004R2KN
2
1
25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
3
50
75
100
125
150
TC , CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
3
4.5V
2
1
4V
2.5
T = 25°C
J
2µ SEC. PULSE TEST
NORMALIZED TO
2.0
V
GS
= 10V @ 0.5 I [Cont.]
1.5
D
V
=10V
GS
V
=20V
GS
1.0
0.5
0.0
0
2
4
6
8
10
12
ID , DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (VOLTS)
(NORMALIZED)
I D , DRAIN CURRENT (AMPERES)
4
0
5V
4
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25 50 75 100 125 150
TC , CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-0036 Rev C
0
5.5V
6V
0
4
8
12
16
20
VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
I D , DRAIN CURRENT (AMPERES)
10
=10V
GS
0
0
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
8
V
=5.5V,6V &10V
I D , DRAIN CURRENT (AMPERES)
I D , DRAIN CURRENT (AMPERES)
V
APT1004R/1004R2KN
APT1004RKN
10µS
APT1004R2KN
10
OPERATION HERE
(ON)
LIMITED BY R
DS
APT1004RKN
APT1004R2KN
100µS
1mS
1
T =+25°C
C
T =+150°C
J
SINGLE PULSE
1
5 10
50 100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS , GATE-TO-SOURCE VOLTAGE (VOLTS)
20
I = I [Cont.]
D
16
V
V
12
DS
=100V
=200V
DS
8
V
DS
=500V
4
0
C
iss
1,000
C
oss
100
C
rss
10mS
100mS
DC
.1
D
C, CAPACITANCE (pF)
10,000
0
10
20
30
40
50
Q g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
I D , DRAIN CURRENT (AMPERES)
60
0
100
50
20
10
T = +150°C
J
T = +25°C
J
5
2
1
0
.5
1.0
1.5
2.0
VSD , SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-220AB Package Outline
1.40 (.020)
0.51 (.055)
Drain
10.67 (.420)
9.65 (.380)
5.33 (.210)
4.83 (.190)
6.86 (.270)
5.84 (.230)
16.51 (.650)
14.22 (.560)
4.09 (.161) Dia.
3.53 (.139)
3.43 (.135)
2.54 (.100)
6.35 (.250)
MAX.
1.14 (.045)
0.30 (.012)
2.92 (.115)
2.03 (.080)
050-0036 Rev C
4.83 (.190)
3.56 (.140)
14.73 (.580)
12.70 (.500)
Gate
Drain
Source
1.14 (.045) 3-Plcs.
0.51 (.020)
2.29 (.090)
2.79 (.110)
4.83 (.190)
5.33 (.210)
Dimensions in Millimeters and (Inches)
1.78 (.070) 3-Plcs.
1.14 (.045)