ANACHIP AF9412NSLA

AF9412N
N-Channel 30-V (D-S) MOSFET
„ Features
„ General Description
-Low rDS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for using in the power management
circuitry.
Typical applications are PWM DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery chargers, telecommunication power
systems, and telephone power systems.
„ Product Summary
VDS (V)
rDS(on) (mΩ)
ID (A)
30
[email protected]=10V
[email protected]=4.5V
9.0
7.0
„ Pin Descriptions
„ Pin Assignments
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
Pin Name
Description
S
G
D
Source
Gate
Drain
SOP-8
„ Ordering information
Feature
F :MOSFET
A X
9412N X X X
PN
Package
Lead Free
Packing
S: SOP-8
Blank : Normal
L : Lead Free Package
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Oct 15, 2004
1/5
AF9412N
N-Channel 30-V (D-S) MOSFET
„ Absolute Maximum Ratings (TA=25ºC unless otherwise noted)
Symbol
VDS
VGS
Parameter
TA=25ºC
TA=70ºC
ID
Continuous Drain Current (Note 1)
IDM
IS
Pulsed Drain Current (Note 2)
Continuous Source Current (Diode Conduction) (Note 1)
TA=25ºC
Power Dissipation (Note 1)
TA=70ºC
Operating Junction and Storage Temperature Range
PD
TJ, TSTG
Rating
30
±20
9.4
7.4
30
1.6
3.1
2.2
-55 to 150
Drain-Source Voltage
Gate-Source Voltage
Units
V
V
A
A
A
W
ºC
„ Thermal Resistance Ratings
Symbol
RθJC
RθJA
Parameter
Maximum Junction-to-Case (Note 1)
Maximum Junction-to-Ambient (Note 1)
Maximum
25
40
t ≤ 5 sec
t ≤ 5 sec
Units
ºC/W
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
„ Specifications (TA=25ºC unless otherwise noted)
Symbol
Min.
Limits
Typ.
Max.
30
1
20
-
1.95
17
29
20
3.0
±100
1
25
22
36
27
-
40
-
S
IS=2.3A, VGS=0V
-
0.7
1.1
V
VDS=15V, VGS=4.5V,
ID=7A
-
4.7
1.7
1.4
8
-
nC
VDD=25V, RL=25Ω, ID=1A,
VGEN=10V
-
16
5
23
3
21
10
37
6
nS
IF=2.3A, Di/Dt=100A/uS
-
41
80
nS
Parameter
Test Conditions
Static
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA
VGS(th) Gate-Threshold Voltage
VDS=VGS, ID=250uA
IGSS
Gate-Body Leakage
VDS=0V, VGS=20V
VDS=24V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V, TJ=55ºC
ID(on)
On-State Drain Current (Note 3)
VDS=5V, VGS=10V
VGS=10V, ID=9.2A
On-Resistance
rDS(on) Drain-Source
VGS=4.5V, ID=8A
(Note 3)
VGS=10V, ID=9.2A, TJ=55ºC
Forward Transconductance
g
V =15V, I =9.2A
fs
(Note 3)
VSD
Diode Forward Voltage
Dynamic (Note 4)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Switching
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall-Time
Source-Drain Reverse Recovery
trr
Time
DS
D
Unit
V
V
nA
uA
A
mΩ
Note 3: Pulse test: PW ≤ 300us duty cycle ≤ 2%.
Note 4: Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
2/5
Oct 15, 2004
AF9412N
N-Channel 30-V (D-S) MOSFET
„ Typical Performance Characteristics
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
3/5
Oct 15, 2004
AF9412N
N-Channel 30-V (D-S) MOSFET
„ Typical Performance Characteristics (Continued)
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
4/5
Oct 15, 2004
AF9412N
N-Channel 30-V (D-S) MOSFET
„ Marking Information
SOP-8L
( Top View )
8
Lot code:
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Logo
9412N
AA Y W X
Part Number
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
~
Factory code
„ Package Information
H
E
Package Type: SOP-8L
L
VIEW "A"
D
0.015x45
C
B
A1
e
7 (4X)
A
A2
7 (4X)
VIEW "A"
y
Symbol
A
A1
A2
B
C
D
E
e
H
L
y
θ
Dimensions In Millimeters
Min.
Nom.
Max.
1.40
1.60
1.75
0.10
0.25
1.30
1.45
1.50
0.33
0.41
0.51
0.19
0.20
0.25
4.80
5.05
5.30
3.70
3.90
4.10
1.27
5.79
5.99
6.20
0.38
0.71
1.27
0.10
8O
0O
Anachip Corp.
www.anachip.com.tw
Dimensions In Inches
Min.
Nom.
Max.
0.055
0.063
0.069
0.040
0.100
0.051
0.057
0.059
0.013
0.016
0.020
0.0075
0.008
0.010
0.189
0.199
0.209
0.146
0.154
0.161
0.050
0.228
0.236
0.244
0.015
0.028
0.050
0.004
0O
8O
Rev. 1.0
5/5
Oct 15, 2004