ANACHIP AF9435PSL

AF9435P
P-Channel 30-V (D-S) MOSFET
Features
General Description
-Low rDS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Extended VGS range (±25) for battery pack
applications
These miniature surface mount MOSFETs utilize High
Cell Density process. Low rDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are PWMDC-DC converters, power
management in portable and battery-powered
products such as computers, printers, battery charger,
telecommunication power system, and telephones
power system.
Product Summary
VDS (V)
rDS(on) (mΩ)
ID (A)
-30
[email protected]=-10V
[email protected]=-4.5V
-5.7
-5.0
Pin Descriptions
Pin Assignments
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
Pin Name
Description
S
G
D
Source
Gate
Drain
SOP-8
Ordering information
Feature
F :MOSFET
A X
9435P X X X
PN
Package
Lead Free
Packing
S: SOP-8
Blank : Normal
L : Lead Free Package
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/5
AF9435P
P-Channel 30-V (D-S) MOSFET
Absolute Maximum Ratings (TA=25ºC unless otherwise noted)
Symbol
VDS
VGS
Parameter
TA=25ºC
TA=70ºC
ID
Continuous Drain Current (Note 1)
IDM
IS
Pulsed Drain Current (Note 2)
Continuous Source Current (Diode Conduction) (Note 1)
TA=25ºC
Power Dissipation (Note 1)
TA=70ºC
Operating Junction and Storage Temperature Range
PD
TJ, TSTG
Rating
-30
±25
±6.5
±5.2
±30
-1.6
3.1
2.0
-55 to 150
Drain-Source Voltage
Gate-Source Voltage
Units
V
V
A
A
A
W
ºC
Thermal Resistance Ratings
Symbol
RθJC
RθJA
Parameter
Maximum Junction-to-Case (Note 1)
Maximum Junction-to-Ambient (Note 1)
Maximum
25
40
t < 5 sec
t < 5 sec
Units
ºC/W
ºC/W
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
Specifications (TA=25ºC unless otherwise noted)
Symbol
Static
V(BR)DSS
VGS(th)
IGSS
Min.
Limits
Typ.
Max.
-30
-1
-
-1.6
-
-3
±100
-1
-
-
-5
-30
-
38
54
49
69
-
42
54
-
19
-0.7
-1.2
S
V
VDS=-15V, VGS=-4.5V,
ID=-5.7A
-
6
2.0
2.7
11
-
nC
VDD=-15, RL=15Ω,
ID=-1A, VGEN=-10V,
RG=6Ω
-
7
13
14
9
14
24
25
17
nS
Parameter
Drain-Source breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
ID(on)
On-State Drain Current (Note 3)
rDS(on)
Drain-Source On-Resistance (Note 3)
gfs
Forward Tranconductance (Note 3)
VSD
Diode Forward Voltage
Dynamic (Note 4)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Switching
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall-Time
Test Conditions
VGS=0V, ID=-250uA
VDS= VGS, ID=-250uA
VDS=0V, VGS=±25V
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V,
TJ=55ºC
VDS=-5V, VGS=-10V
VGS=-10V, ID=-5.7A
VGS=-4.5V, ID=-5.0A
VGS=-10V, ID=-5.7A,
TJ=55ºC
VDS=-15V, ID=-5.7A
IS=-2.1A, VGS=0V
Unit
V
V
nA
uA
A
mΩ
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
2/5
AF9435P
P-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
3/5
AF9435P
P-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
4/5
AF9435P
P-Channel 30-V (D-S) MOSFET
Marking Information
SOP-8L
( Top View )
8
Lot code:
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Logo
9435 P
AA Y W X
Part Number
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
~
Factory code
Package Information
H
E
Package Type: SOP-8L
L
VIEW "A"
D
0.015x45
7 (4X)
B
e
A1
C
A
A2
7 (4X)
VIEW "A"
y
A
A1
A2
B
C
Dimensions In Millimeters
Min.
Nom.
Max.
1.40
1.60
1.75
0.10
0.25
1.30
1.45
1.50
0.33
0.41
0.51
0.19
0.20
0.25
Dimensions In Inches
Min.
Nom.
Max.
0.055
0.063
0.069
0.040
0.100
0.051
0.057
0.059
0.013
0.016
0.020
0.0075
0.008
0.010
D
4.80
5.05
5.30
0.189
0.199
0.209
E
3.70
3.90
4.10
0.146
0.154
0.161
e
H
L
y
θ
5.79
0.38
0O
1.27
5.99
0.71
-
6.20
1.27
0.10
8O
0.228
0.015
0O
0.050
0.236
0.028
-
0.244
0.050
0.004
8O
Symbol
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
5/5