ANPEC APM2312

APM2312
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
D
16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V
3
RDS(ON)=45mΩ(typ.) @ VGS=2.5V
RDS(ON)=60mΩ(typ.) @ VGS=1.8V
•
Super High Dense Cell Design for Extremely
Low RDS(ON)
•
•
SOT-23 Package
2
G
S
Top View of SOT-23
D
Applications
•
1
Reliable and Rugged
Power Management in Notebook Computer ,
G
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
APM2312
Package Code
A : SOT-23
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
Handling Code
Temp. Range
Package Code
APM2312 A :
X - Date Code
M12X
Absolute Maximum Ratings
Symbol
S
N-Channel MOSFET
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
16
VGSS
Gate-Source Voltage
±8
ID*
Maximum Drain Current – Continuous
5
IDM
Maximum Drain Current – Pulsed
15
Unit
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003
1
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APM2312
Absolute Maximum Ratings (Cont.)
Symbol
PD
Parameter
Maximum Power Dissipation
TJ
(TA = 25°C unless otherwise noted)
Rating
TA=25°C
1.25
TA=100°C
0.5
W
150
°C
-55 to 150
°C
100
°C/W
Maximum Junction Temperature
TSTG
Storage Temperature Range
RθjA
Thermal Resistance – Junction to Ambient
Electrical Characteristics
Symbol
Parameter
Unit
(TA = 25°C unless otherwise noted)
Test Condition
APM2312
Min.
Typ.
Max.
Unit
Static
BV DSS
Drain-Source Breakdown
Voltage
V GS =0V , IDS=250µA
IDSS
Zero Gate Voltage Drain
Current
V DS =16V , VGS =0V
V GS(th)
Gate Threshold Voltage
V DS =V GS , IDS=250µA
Gate Leakage Current
V GS =±8V , VDS=0V
V GS =4.5V , IDS =5A
35
45
V GS =2.5V , IDS =4.5A
45
55
V GS =1.8V , IDS =4A
60
70
ISD=1.7A , VGS =0V
0.7
1.3
V DS =10V , IDS = 1A
10
12
V GS =4.5V ,
1.9
IGSS
Drain-Source On-state
R DS(ON)a
Resistance
V SDa
Diode Forward Voltage
16
0.5
V
0.7
1
µA
1
V
±100
nA
mΩ
V
b
Dynamic
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
Turn-off Delay Time
td(OFF)
Tf
Turn-off Fall Time
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Notes
a
b
nC
1.8
17
33
V DD=10V , IDS =1A ,
40
70
V GEN =4.5V , R G =0.2Ω
45
80
25
580
45
V GS =0V
V DS =15V
Reverse Transfer Capacitance Frequency=1.0MHz
170
ns
pF
100
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003
2
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APM2312
Typical Characteristics
Output Characteristics
Transfer Characteristics
12
12
VGS=2,3,4,5,6,7,8,9,10V
10
ID-Drain Current (A)
ID-Drain Current (A)
10
8
6
VGS=1.5V
4
2
8
6
TJ=125°C
4
TJ=25°C
2
TJ=-55°C
VGS=1V
0
0
1
2
3
4
0
0.0
5
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
0.08
1.75
1.50
RDS(ON)-On-Resistance (Ω)
VGS(th)-Threshold Voltage (V)
(Normalized)
IDS=250uA
1.25
1.00
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
0.06
0.05
VGS=2.5V
0.04
VGS=4.5V
0.03
0.02
0.01
0.00
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003
0.07
0
3
6
9
12
ID - Drain Current (A)
3
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APM2312
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
2.25
ID=5A
0.09
RDS(ON)-On-Resistance (Ω)
(Normalized)
RDS(ON)-On-Resistance (Ω)
0.10
On-Resistance vs. Junction Temperature
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
VGS=4.5V
ID=5A
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
1
2
3
4
5
6
7
0.00
-50
8
VGS - Gate-to-Source Voltage (V)
-25
0
50
75
100 125 150
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
5
1000
Frequency=1MHz
VDS=10V
ID=1A
4
800
Capacitance (pF)
VGS-Gate-Source Voltage (V)
25
3
2
1
Ciss
600
400
Coss
200
Crss
0
0
2
4
6
8
10
0
12
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
4
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APM2312
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
Single Pulse Power
12
10
10
TJ=150°C
Power (W)
IS-Source Current (A)
20
TJ=25°C
8
6
4
2
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
0.01
0.1
VSD -Source-to-Drain Voltage (V)
1
10
100
600
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100°C/W
3.T JM-T A=P DMZ thJA
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
100
600
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003
5
www.anpec.com.tw
APM2312
Packaging Information
SOT-23
D
B
3
E
H
2
1
S
e
A
L
A1
Dim
C
M illim et er s
Inc he s
A
M in.
1. 0 0
M ax.
1. 3 0
M in.
0. 0 39
M ax.
0. 0 51
A1
0. 0 0
0. 1 0
0. 0 00
0. 0 04
B
0. 3 5
0. 5 1
0. 0 14
0. 0 20
C
0. 1 0
0. 2 5
0. 0 04
0. 0 10
D
2. 7 0
3. 1 0
0. 1 06
0. 1 22
E
1. 4 0
1. 8 0
0. 0 55
0. 0 71
e
1. 9 0 B SC
H
2. 4 0
L
0. 3 7
Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003
0. 0 75 B SC
3. 0 0
0. 0 94
0. 118
0. 0 01 5
6
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APM2312
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
(IR/Convection or VPR Reflow)
temperature
Reflow Condition
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM2312
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
D
P
Po
E
t
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
SOT-23
A
B
C
J
178±1
60 ± 1.0
12.0
F
D
D1
Po
3.5 ± 0.05
1.5 +0.1
F0.1MIN
4.0
T1
P
E
1.4
W
8.0+ 0.3
- 0.3
4.0
1.75
P1
Ao
Bo
Ko
t
2.0 ± 0.05
3.1
3.0
1.3
0.2±0.03
2.5 ± 0.15 9.0 ± 0.5
T2
(mm)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003
8
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APM2312
Cover Tape Dimensions
Application
SOT- 23
Carrier Width
8
Cover Tape Width
5.3
Devices Per Reel
3000
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003
9
www.anpec.com.tw