APM4220 N-Channel Enhancement Mode MOSFET Features • • • • Pin Description 25V/14A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOP-8 Package S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO − 8 D Applications • Power Management in Desktop Computer or G DC/DC Converters. S Ordering and Marking Information Package Code K : SO-8 Operating Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Orginal Device APM4220 Lead Free Code Handling Code Temp. Range Package Code APM4220 K : APM4220 XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol N-Channel MOSFET (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 25 VGSS Gate-Source Voltage ±20 Maximum Drain Current – Continuous 14 Maximum Drain Current – Pulsed 60 ID * IDM Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 1 www.anpec.com.tw APM4220 Absolute Maximum Ratings (Cont.) Symbol (TA = 25°C unless otherwise noted) Parameter PD Maximum Power Dissipation TJ Maximum Junction Temperature Rating TSTG Storage Temperature Range * RθJA Thermal Resistance – Junction to Ambient TA=25°C 2.5 TA=100°C 1.0 Unit W 150 °C -55 to 150 °C 50 °C/W Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM4220 Typ. Max. Min. Unit Static BVDSS IDSS VGS(th) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage IGSS RDS(ON) Gate Leakage Current a Drain-Source On-state Resistance a VSD V 25 1 1.5 2 µA V ±100 nA VGS=10V, IDS=14A 7.5 9 VGS=4.5V,IDS=8A 10 12 VGS=0V, IDS=250µA VDS=20V , VGS=0V VDS=VGS, IDS=250µA VGS=±20V, VDS=0V 1 Diode Forward Voltage IS=16A, VGS=0V 0.7 1.2 Qg Qgs Total Gate Charge Gate-Source Charge VDS=15V, IDS=14A 16 6 20 mΩ V b Dynamic VGS=4.5V, nC Qgd Gate-Drain Charge td(ON) Turn-on Delay Time 10 15 Tr Turn-on Rise Time VDD=15V, IDS=1A, 7 13 td(OFF) Turn-off Delay Time VGEN=10V,RG=6Ω, 35 50 10 20 6 Tf Turn-off Fall Time Ciss Input Capacitance VGS=0V 1785 Coss Crss Output Capacitance Reverse Transfer Capacitance VDS=15V 605 490 Frequency=1.0MHz ns pF Notes a b : Guaranteed by design, not subject to production testing : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 2 www.anpec.com.tw APM4220 Typical Characteristics Output Characteristics Transfer Characteristics 60 60 VGS= 4,5,6,7,8,9,10V 50 ID-Drain Current (A) IDS-Drain Current (A) 50 VGS=3V 40 30 20 VGS=2.5V 10 40 30 o Tj=125 C 20 o o Tj=25 C 10 Tj=-55 C VGS=2V 0 0 2 4 6 8 0 10 0 VDS-Drain-to-Source Voltage (V) 1 2 3 4 5 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.2 0.014 RDS(ON)-On-Resistance (Ω) VGS(th)-Thershold Voltage (V) (Normalized) IDS=250µA 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 VGS=4.5V 0.010 VGS=10V 0.008 0.006 0.004 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 0.012 0 10 20 30 40 50 60 IDS-Drain Current (A) 3 www.anpec.com.tw APM4220 Typical Characteristics (Cont.) On-Resistaence vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0.030 1.6 VGS=10V IDS=14A 0.025 RDS(ON)-On-Resistance (Ω) (Normalized) RDS (ON)-On-Resistance (Ω) ID= 14A 0.020 0.015 0.010 0.005 0.000 0 2 4 6 8 1.4 1.2 1.0 0.8 0.6 -50 10 VGS-Gate-to-Source Voltage (V) -25 0 75 100 125 150 Capacitance Gate Charge 3000 Frequency=1MHz VDS=10 V IDS=14A 8 2500 Capacitance (pF) VGS-Gate-to-Source Voltage (V) 50 Tj-Junction Temperature (°C) 10 6 4 2 0 25 2000 Ciss 1500 1000 Crss Coss 500 0 8 16 24 0 0 32 10 15 20 25 VDS-Drain-to-Source Voltage (V) QG-Total-Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 5 4 www.anpec.com.tw APM4220 Typical Characteristics (Cont.) Single Pulse Power 16 80 10 60 Power (W) ISD-Source Current (A) Source-Drain Diode Forward Voltage o Tj=125 C 1 o Tj=-55 C o Tj=25 C 40 20 0.1 0.0 0.3 0.6 0.9 1.2 0 0.01 1.5 VSD-Source to Drain Voltage (V) 0.1 1 10 30 Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0. D=0.2 D=0.1 0.1 D=0.05 D=0.02 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted D=0.01 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 5 www.anpec.com.tw APM4220 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM4220 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4220 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 SOP-8 A 330±1 Application SOP-8 F 5.5 ± 0.1 Application B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 8 www.anpec.com.tw APM4220 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 9 www.anpec.com.tw