APM9410 N-Channel Enhancement Mode MOSFET Pin Description Features • SO-8 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=23mΩ(typ.) @ VGS=4.5V • Low RDS(ON) • • S 1 8 D S 2 7 D S 3 6 D G 4 5 D Super High Dense Cell Design for Extremely Reliable and Rugged SO-8 Package Top View Applications • D Power Management in Notebook Computer , Portable Equipment and Battery Powered G Systems. Ordering and Marking Information APM 9410 Tem p. R ange P ackage C ode APM 9410 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol N-Channel MOSFET P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e APM 9410 K : S (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID* Maximum Drain Current – Continuous 8 IDM Maximum Drain Current – Pulsed 32 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1 www.anpec.com.tw APM9410 Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TJ (TA = 25°C unless otherwise noted) Rating Unit TA=25°C 2.5 W TA=100°C 1.0 W 150 °C -55 to 150 °C 50 °C/W Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM9410 Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current Drain-Source On-state RDS(ON)a Resistance Diode Forward Voltage VSDa VGS=0V , IDS=250µA 30 V VDS=24V , VGS=0V 1 VDS=24V, VGS=0V, Tj= 55°C VDS=VGS , IDS=250µA 5 µA 1.5 2 V VGS=±20V , VDS=0V VGS=10V , IDS=4A nA 15 ±100 20 VGS=4.5V , IDS=2A 23 32 ISD=2A , VGS=0V 0.7 1.3 VDS=15V , IDS= 10A 15 20 VGS=5V , 5.8 1 mΩ V b Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time 3.8 Tr Turn-on Rise Time VDD=15V , IDS=2A , td(OFF) Turn-off Delay Time VGEN=10V , RG=6Ω 11 18 17 26 37 54 20 30 Tf Turn-off Fall Time Ciss Input Capacitance VGS=0V 1200 Coss Output Capacitance VDS=15V 220 Crss Reverse Transfer Capacitance Frequency=1.0MHz Notes a b nC ns pF 100 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 2 www.anpec.com.tw APM9410 Typical Characteristics Output Characteristics Transfer Characteristics 30 40 VG=4,4.5,6,8,10V IDS-Drain Current (A) IDS-Drain Current (A) 25 20 15 V GS=3.5V 10 V GS=3V 30 20 TJ=25°C TJ=125°C 10 TJ=-55°C 5 VGS=2.5V 0 1.0 0 0 1 2 3 4 5 6 7 8 9 10 1.5 VDS-Drain-to-Source Voltage (V) 3.0 3.5 4.0 On-Resistance vs. Drain Current 0.040 1.2 IDS=250µA RDS(on)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) 2.5 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.0 0.8 0.6 0.4 -50 2.0 -25 0 25 50 75 100 125 0.030 VGS=4.5V 0.025 0.020 VGS=10V 0.015 0.010 0.005 0.000 150 0 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 0.035 5 10 15 20 25 30 IDS-Drain Current (A) 3 www.anpec.com.tw APM9410 Typical Characteristics (Cont.) On-Resistaence vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 1.6 IDS=4A 0.040 RDS(on)-On-Resistance (Ω) (Normalized) RDS(on)-On-Resistance (Ω) 0.045 0.035 0.030 0.025 0.020 0.015 0.010 V GS=10V IDS=4A 1.4 1.2 1.0 0.8 0.005 0.000 3 4 5 7 6 8 9 0.6 -50 10 Gate Voltage (V) 0 25 50 75 100 125 150 Tj-Junction Temperature (°C) Capacitance Characteristics Gate Charge 10 2000 VGS-Gate-to-Source Voltage (V) VDS=15V IDS=10A Ciss 1000 C-Capacitance (pF) 8 6 4 2 0 -25 500 Coss Crss 100 Frequency=1MHz 0 5 10 15 20 25 0.1 30 QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1 10 30 VDS-Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM9410 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 100 60 50 10 1 40 TJ=125°C Power (W) ISD-Source Current (A) Rthjc = 2 °C/W TJ=-55°C 20 TJ=25°C 0.1 0.0 30 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -2 -1 10 10 VSD-Source to Drain Voltage 0 1 10 10 2 10 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Transient Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted SINGLE PULSE 0.01 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 5 www.anpec.com.tw APM9410 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM9410 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM9410 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 8 2.1± 0.1 0.3±0.013 www.anpec.com.tw 8 APM9410 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 9 www.anpec.com.tw