ANPEC APM2512NUC-TRL

APM2512N
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
25V/40A , RDS(ON)=9mΩ(typ.) @ VGS=10V
RDS(ON)=13mΩ(typ.) @ VGS=4.5V
•
Super High Dense Cell Design for Extremely
Low RDS(ON)
•
•
Reliable and Rugged
TO-252 Package
1
2
3
G
D
S
Top View of TO-252
D
Applications
•
Power Management in Computer, Portable
G
Equipment and Battery Powered Systems.
S
N-Channel MOSFET
Ordering and Marking Information
APM2512N
Package Code
U : TO-252
Operation Junction Temp. Range
C :-55 to 150 C
°
Handling Code
TR : Tape & Reel
L : Lead Free Code
L : Lead Free Device Blank : Original Device
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2512N U :
APM2512N
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
25
VGSS
Gate-Source Voltage
±20
Unit
V
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
1
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APM2512N
Absolute Maximum Ratings (Cont.)
Symbol
(TC= 25°C unless otherwise noted)
Parameter
Rating
ID
Maximum Drain Current – Continuous
40
IDM
Maximum Pulsed Drain Current ( pulse width ≤ 300µs)
90
PD
Maximum Power Dissipation
TJ,TSTG
Tc=25°C
50
Tc=100°C
20
Maximum Operating and Storage Junction Temperature
Unit
A
W
°C
-55 to 150
*
RθJA
Thermal Resistance – Junction to Ambient
50
RθJC
Thermal Resistance – Junction to Case
2.5
°C/W
2
* Mounted on 1in pad area of PCB.
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
Min.
APM2512N
Typ.
Max.
Unit
Static
BV DSS
Drain-Source Breakdown
Voltage
V GS =0V , IDS=250µA
IDSS
Zero Gate Voltage Drain
Current
V DS =20V , V GS=0V
V GS(th)
IGSS
Gate Threshold Voltage
Gate Leakage Current
R DS(ON)
V SD
a
a
V DS =V GS , IDS=250µA
V
25
1
1.5
1
µA
2
V
±100
nA
Drain-Source On-state
V GS =±20V , V DS=0V
V GS =10V , IDS=20A
9
12
Resistance
V GS =4.5V , IDS=10A
13
20
Diode Forward Voltage
ISD =10A , VGS=0V
0.9
1.3
28
38
mΩ
V
b
Dynamic
Q g
Total Gate Charge
Q gs
Q gd
Gate-Source Charge
Gate-Drain Charge
td(ON)
T r
Turn-on Delay Time
Turn-on Rise Time
td(OFF)
T f
C iss
C oss
C rss
Notes
a
b
V DS =15V , IDS= 10A
V GS =10V ,
nC
3.6
8.4
V DD =10V , IDS=10A ,
10
15
20
25
Turn-off Delay Time
Turn-off Fall Time
V GEN =10V , R G=6Ω 35
50
15
20
Input Capacitance
Output Capacitance
V GS =0V
1560
345
245
V DS =15V
Reverse Transfer Capacitance Frequency=1.0MHz
ns
pF
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
2
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APM2512N
Typical Characteristics
Output Characteristics
Transfer Characteristics
40
40
VGS=5,6,7,8,9,10V
VGS=4V
35
ID-Drain Current (A)
ID-Drain Current (A)
35
30
25
VGS=3.5V
20
15
VGS=3V
10
5
0
1
2
3
4
5
25
20
15
o
Tj=125 C
10
o
6
7
8
9
Tj=25 C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.8
0.022
RDS(ON)-On-Resistance (Ω)
VGS(th)-Threshold Voltage
(Normalized)
0.024
IDS =250µA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
Tj=-55 C
o
5
VGS=2.5V
0
30
0.020
0.018
0.016
VGS=4.5V
0.014
0.012
VGS=10V
0.010
0.008
0.006
0.004
-25
0
25
50
75
0.002
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
0
5
10
15
20
25
30
35
40
ID - Drain Current (A)
3
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APM2512N
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
1.8
0.016
ID=20A
0.014
0.013
0.012
0.011
0.010
0.009
0.008
IDS = 20A
1.4
1.2
1.0
0.8
0.6
0.4
0.007
0.006
VGS = 10V
1.6
RDS(ON)-On-Resistance
(Normalized)
RDS(ON)-On-Resistance (Ω)
0.015
3
4
5
6
7
8
9
[email protected] = 25°C: 9mΩ
0.2
-50
10
VGS - Gate-to-Source Voltage (V)
-25
0
50
75
Capacitance
10
3000
Frequency=1MHz
VDS= 15 V
IDS = 10A
2500
Capacitance (pF)
8
6
4
2
0
100 125 150
TJ - Junction Temperature (°C)
Gate Charge
VGS-Gate-Source Voltage (V)
25
2000
Ciss
1500
1000
Coss
500
0
5
10
15
20
25
0
30
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
Crss
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
4
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APM2512N
Typical Characteristics
Source-Drain Diode Forward Voltage
Single Pulse Power
40
700
2
Mounted on 1in pad
o
TA=25 C
500
o
Power (W)
IS-Source Current (A)
600
10
o
Tj=150 C
Tj=25 C
1
400
300
200
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1E-4
1.4
1E-3
VSD -Source-to-Drain Voltage (V)
0.01
0.1
1
10
100300
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
PDM
D=0.05
t
D=0.02
D=0.01
1
t
0.01
2
1.Duty Cycle, D= t1/t2
o
2.Per Unit Base=RthJA=50 C/W
SINGLE PULSE
3.TJM-TA=PDMZthJA
2
4.Surface Mounted on 1in pad
1E-3
1E-4
1E-3
0.01
0.1
1
10
100
300
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
5
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APM2512N
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A
A1
Mi ll im et er s
Inc he s
Min .
Ma x .
Min .
Ma x .
2. 1 8
2. 3 9
0. 0 86
0. 0 94
A1
0. 8 9
1. 2 7
0. 0 35
0. 0 50
b
0. 5 08
0. 8 9
0. 0 20
0. 0 35
b2
5. 2 07
5. 4 61
0. 2 05
0. 2 15
C
0. 4 6
0. 5 8
0. 0 18
0. 0 23
C1
0. 4 6
0. 5 8
0. 0 18
0. 0 23
D
5. 3 34
6. 2 2
0. 2 10
0. 2 45
E
6. 3 5
6. 7 3
0. 2 50
0. 2 65
e1
3. 9 6
5. 1 8
0. 1 56
0. 2 04
H
9. 3 98
10 . 41
0. 3 70
0. 4 10
L
0. 5 1
L1
0. 6 4
1. 0 2
0. 0 25
0. 0 40
L2
0. 8 9
2. 0 32
0. 0 35
0. 0 80
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
0. 0 20
6
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APM2512N
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
(IR/Convection or VPR Reflow)
temperature
Reflow Condition
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM2512N
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
D
P
Po
E
t
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
330 ±3
100 ± 2
13 ± 0. 5
2 ± 0.5
F
D
D1
Po
7.5 ± 0.1
1.5 +0.1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
T1
T2
16.4 + 0.3 2.5± 0.5
-0.2
P1
1.5± 0.25 4.0 ± 0.1
8
2.0 ± 0.1
Ao
W
16+ 0.3
- 0.1
P
E
8 ± 0.1
1.75± 0.1
Bo
Ko
t
2.5± 0.1
0.3±0.05
6.8 ± 0.1 10.4± 0.1
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APM2512N
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
9
www.anpec.com.tw