AJT150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG (A) DESCRIPTION: A 4x .062 x 45° 2xB The ASI AJT150 is Designed for .040 x 45° C F E D FEATURES: G • Input Matching Network • • Omnigold™ Metalization System I L N 10 A 60 V VCB VCE 35 V PDISS 140 W MINIMUM MAXIMUM inches / mm inches / mm A .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 D .376 / 9.55 E .110 / 2.79 .130 / 3.30 F .395 / 10.03 .407 / 10.34 .193 / 4.90 .510 / 12.95 .100 / 2.54 I O .396 / 10.06 .490 / 12.45 H -65 C to +200 C TJ DIM G O J .690 / 17.53 .710 / 18.03 K .890 / 22.61 .910 / 23.11 L .003 / 0.08 .006 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 P TSTG -65 OC to +150 OC θ JC 0.57 OC/W CHARACTERISTICS SYMBOL P M MAXIMUM RATINGS IC 2xR H J K ORDER CODE: ASI10548 O TC = 25 C NONETEST CONDITIONS BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VBE = 50 V hFE VCE = 5.0 V PG ηC VCc = 50 V RBE = 10 Ω IC = 1.0 A POUT = 150 W MINIMUM TYPICAL MAXIMUM 35 V 60 V 4.0 V 10 f = 960 - 1215 MHz UNITS 7.5 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5 mA 100 --dB % REV. A 1/1