OSC-1.3SH NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: ØD The ASI OSC-1.3SH is Designed for B .060 x 45° CHAMFER C E FEATURES: G L • • • Omnigold™ Metalization System 700 mA VCC 30 V PDISS 17.6 W @ TC ≤ 50 C MINIMUM inches / mm inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 TSTG -65 OC to +200 OC θ JC 8.5 OC/W CHARACTERISTICS SYMBOL .255 / 6.48 .132 / 3.35 .110 / 2.79 .117 / 2.97 .117 / 2.97 G O MAXIMUM .125 / 3.18 F -65 OC to +200 OC I K DIM E TJ J P MN MAXIMUM RATINGS IC F H H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ORDER CODE: ASI10638 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 1.0 mA BVCER IC = 5.0 mA BVEBO IE = 1.0 mA ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 21 V RBE = 10 Ω IC = 500 mA MINIMUM TYPICAL MAXIMUM 45 V 45 V 3.5 V 30 f = 1.0 MHz ICQ = 200 mA f = 2.7 GHz UNITS 4.5 POUT = 1.3 W mA 300 --- 12 pF dB 30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 % REV. A 1/1