MLN1037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN1037F is Designed for Class A Linear Applications up to 1.0 GHz. A ØD B FEATURES: .060 x 45° CHAMFER C E • Class A Operation • PG = 10 dB at 5.0 W/1.0 GHz • Omnigold™ Metalization System G L 10 A VCB 60 V VCE 35 V PDISS 140 W @ TC = 25 °C -65 °C to +150 °C θJC 5.5 °C/W CHARACTERISTICS inches / mm inches / mm A .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 .117 / 2.97 H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ORDER CODE: ASI10628 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM MINIMUM G TSTG NP .028 / 0.71 F -65 °C to +200 °C I K DIM E TJ J M MAXIMUM RATINGS IC F H BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V PGE VCE = 20 V POUT = 5.0 W RBE = 10 Ω IC = 1.0 A MINIMUM TYPICAL MAXIMUM 35 V 60 V 4.0 V 10 f = 1.0 MHz ICQ = 800 mA f = 1.0 GHz UNITS 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5 mA 100 --- 15 pF dB REV. B 1/1