BLY93H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY93H is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD FEATURES: A .112x45° • Common Emitter • PG = 9.0 dB at 25 W/175 MHz • Omnigold™ Metalization System B E C C E ØC MAXIMUM RATINGS E B B E D H I J IC 3.0 A VCBO 65 V VCEO 35 V VEBO PDISS TJ TSTG θJC G #8-32 UNC-2A F E MAXIMUM DIM MINIMUM inches / mm inches / mm 4.0 V A .220 / 5.59 .230 / 5.84 B .980 / 24.89 70 W @ TC = 25 °C C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 -65 °C to +200 °C E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 -65 °C to +150 °C 2.5 °C/W CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL .175 / 4.45 .750 / 19.05 J MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 35 V BVCES IC = 10 mA 65 V BVEBO IE = 10 mA 4.0 V ICES VCE = 36 V hFE VCE = 5.0 V COB VCB = 28 V f = 1.0 MHz GP VCE = 28 V f = 175 MHz fT VCB = 28 V IC = 1.25 A IE = 200 mA 10 4.0 mA 100 --- 45 9.0 f = 100 MHz --625 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change witout notice. pF dB MHz REV. A 1/1