MLN1030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN1030SS is Designed for D A FEATURES: C • • • Omnigold™ Metalization System B G E F H #8-32UNC MAXIMUM RATINGS J IC 10 A VCB 60 V VCE 35 V inches / mm inches / mm A .976 / 24.800 1.000 / 25.4000 B .976 / 24.800 1.000 / 25.4000 C .028 / 0.700 140 W @ TC = 25 OC O O TJ -65 C to +200 C TSTG -65 OC to +150 OC θ JC 20 OC/W CHARACTERISTICS SYMBOL .031 / 0.800 .138 / 3.500 D PDISS MAXIMUM MINIMUM DIM E .161 / 4.100 .196 / 5.000 F .098 / 2.500 .110 / 2.800 G .200 / 5.100 .208 / 5.300 H .004 / 0.100 .006 / 0.150 I .425 / 10.800 .465 / 11.800 J .200 / 5.100 2.05 / 5.200 ORDER CODE: ASI10625 O TC = 25 C NONETEST CONDITIONS BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V PGE VCE = 20 V POUT = 1.0 W RBE = 10 Ω IC = 1.0 A MINIMUM TYPICAL MAXIMUM V 60 V 4.0 V 10 f = 1.0 MHz ICQ = 150 mA f = 1.0 GHz UNITS 35 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 100 --- 5.0 pF dB REV. A 1/1