HF10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF10-12F is Designed for FEATURES: B .112 x 45° A E • PG = 20 dB min. at 10 W/30 MHz • IMD3 = -30 dBc max. at 10 W (PEP) • Omnigold™ Metalization System C Ø.125 NOM. FULL R J .125 B E C D E F MAXIMUM RATINGS G IC 4.5 A VCBO 36 V VCEO 18 V VEBO PDISS 4.0 V 80 W @ TC = 25 C -65 OC to +200 OC TJ O -65 C to +150 C θ JC 2.2 OC/W CHARACTERISTICS SYMBOL MINIMUM inches / mm MAXIMUM inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 .385 / 9.78 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 I O T STG DIM E O H I .240 / 6.10 J .255 / 6.48 ORDER CODE: ASI10592 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 50 mA 36 V BV CES IC = 50 mA 36 V BV CEO IC = 50 mA 18 V BV EBO IE = 5 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V Cob VCB = 12.5 V GPE IMD3 VCC = 12.5 V POUT = 10 W(PEP) IC = 1.0 A 10 f = 1.0 MHz ICQ = 25 mA f = 30 MHz 5 mA 200 --- 100 15 18 pF --- dB -30 dB A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.