SBC556 Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-55V • Complementary pair with SBC546 Ordering Information Type NO. Marking SBC556 SBC556 Package Code TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Collector 2. Base 3. Emitter 0.38 1.20±0.1 1 2 3 KST-9027-000 1 SBC556 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -80 V Collector-Emitter voltage VCEO -55 V Emitter-Base voltage VEBO -5 V Collector current IC -100 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Collector-Emitter breakdown voltage BVCEO IC=-2mA, IB=0 Base-Emitter turn on voltage VBE(ON) Base-Emitter saturation voltage Collector-Emitter saturation voltage - - V VCE=-5V, IC=-2mA - - -700 mV VBE(sat) IC=-100mA, IB=-5mA - -900 - mV VCE(sat) IC=-100mA, IB=-5mA - - -650 mV - - -15 nA 110 - 800 - VCB=-5V, IC=-10mA - 150 - MHz Cob VCB=-10V, IE=0, f=1MHz - - 4.5 pF NF VCE=-5V, IC=-200µA, f=1KHz,Rg=2KΩ - - 10 dB ICBO VCB=-35V, IE=0 DC current gain hFE* VCE=-5V, IC=-2mA Collector output capacitance Noise figure Unit -55 Collector cut-off current Transition frequency Min. Typ. Max. fT * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-9027-000 2 SBC556 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 3 IC-VCE Fig. 2 IC-VBE Fig. 4 hFE-IC Fig. 5 VCE(sat) -IC KST-9027-000 3