DYNEX MP04HBT14

MP04---590
MP04---590
Dual Thyristor, Thyristor/Diode Module
Replaces April 2001 version, DS5371-2.2
DS5371-3.1 October 2001
FEATURES
■
Dual Device Module
■
Electrically Isolated Package
■
Pressure Contact Construction
■
International Standard Footprint
■
Alumina (Non Toxic) Isolation Medium
■
Integral Water Cooled Heatsink
KEY PARAMETERS
VDRM
IT(AV)
ITSM(per arm)
Visol
Code
1800V
595A
16800A
3000V
Circuit
HBT
APPLICATIONS
HBP
■
Motor Control
■
Controlled Rectifier Bridges
■
Heater Control
■
AC Phase Control
HBN
Fig.1 Circuit diagrams
VOLTAGE RATINGS
Type Number
MP04---590-18
MP04---590-16
MP04---590-14
Repetitive Peak
Voltages
VDRM VRRM
V
1800
1600
1400
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 50mA
VDSM = VRSM =
VDRM = VRRM + 100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
Order As:
MP04HBT590-18 or MP04HBT-16 or MP04HBT14
Module type code: MP04.
For further information see Package Details.
Fig. 2 Electrical connections - (not to scale)
MP04HBP590-18 or MP04HBP-16 or MP04HBP14
MP04HBN590-18 or MP04HBN-16 or MP04HBN14
Note: When ordering, please use the whole part number.
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MP04---590
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
IT(AV)
IT(RMS
ITSM
I2t
ITSM
I2t
ITSM
I2t
ITSM
I2t
Visol
Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I2t for fusing
Surge (non-repetitive) on-current
I2t for fusing
Surge (non-repetitive) on-current
I2t for fusing
Surge (non-repetitive) on-current
I2t for fusing
Isolation voltage
Test Conditions
Max.
Units
Tcase = 75˚C
595
A
Tcase = 85˚C
505
A
935
A
8.3ms half sine, Tj = 125˚C
16.8
kA
VR = 0
1411 X 103
A2s
8.3ms half sine, Tj = 125˚C
13.5
kA
VR = 50% VDRM
911 X 103
A2s
15.7
kA
VR = 0
1232 X 103
A2s
10ms half sine, Tj = 125˚C
12.6
kA
VR = 50% VDRM
794 X 103
A2s
3000
V
Half wave resistive load
Tcase = 75˚C
10ms half sine, Tj = 125˚C
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
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MP04---590
THERMAL AND MECHANICAL RATINGS
Test Conditions
Parameter
Symbol
Min.
Max.
Units
Thermal resistance - junction to case
dc
-
0.056
˚C/kW
(per thyristor or diode)
Half wave
-
0.060
˚C/kW
3 Phase
-
0.066
˚C/kW
Thermal resistance - case to heatsink
Mounting torque = 5Nm
-
0.02
˚C/kW
(per thyristor or diode)
with mounting compound
Tvj
Virtual junction temperature
Reverse (blocking)
-
125
˚C
Tstg
Storage temperature range
–40
130
˚C
Rth(j-c)
Rth(c-hs)
-
-
-
Screw torque
Mounting - M6
-
6 (35) Nm (lb.ins)
Electrical connections - M10
-
12 (106) Nm (lb.ins)
-
Weight (nominal)
-
1580
g
DYNAMIC CHARACTERISTICS - THYRISTOR
Parameter
Symbol
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tj = 125˚C
-
50
mA
dV/dt
Linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125˚C
-
1000
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 1500A, gate source 1.5A,
-
500
A/µs
IRRM/IDRM
tr = 0.5µs, Tj = 125˚C
VT(TO)
rT
Threshold voltage
At Tvj = 125˚C. See note 1
-
0.85
V
On-state slope resistance
At Tvj = 125˚C. See note 1
-
0.38
mΩ
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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MP04---590
GATE TRIGGER CHARACTERISTICS AND RATINGS
Parameter
Symbol
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3.5
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
200
mA
VGD
Gate non-trigger voltage
At VDRM , Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
10
A
PGM
Peak gate power
See table fig. 5
150
W
PG(AV)
Mean gate power
10
W
-
-
CURVES
2500
Measured under
pulse conditions
40
1.6
35
1.4
30
1.2
25
1
20
0.8
15
0.6
Peak half sine on-state current - (kA)
1500
1000
500
0.4
ITSM (VR = 0)
Tj = 125˚C Min
Tj = 125˚C Max
0
0.5
10
I2t value - (A2s x 106)
Instantaneous on-state current, IT - (A)
2000
1.0
1.5
2.0
Instantaneous on-state voltage, VT - (V)
Fig. 3 Maximum (limit) on-state characteristics
2.5
ITSM (VR = 50% VRRM)
5
I2t (VR = 0)
I2t (VR = 50% VRRM)
0
1
2
3
5
6
7
4
8
Pulse length, half sine wave (ms)
9
0.2
0
10
Fig. 4 Sub-cycle surge curves
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MP04---590
100
Surge current (VR = 0)
Gate trigger voltage, VGT - (V)
14
12
10
8
6
10
0
0
Up
1
10
20
30
40
Number of cycles @ 50Hz
50
L
r li
owe
0.1
0.001
60
0.01
99%
Tj = 125˚C
mit
VGD
Region of
certain triggering
0.1
1
Gate trigger current, IGT - (A)
10
IFGM
Fig. 6 Gate characteristics
Fig. 5 Sub-cycle surge curves
0.06
2200
2000
0.05
1800
Power dissipation (Watts, per arm)
Thermal resistance junction to case - (°C/W)
9%
it 9
lim
per
4
2
0W
10
W
50
Peak half sine wave on-state current - (kA)
16
W
20
W
10
5W
Pulse width Frequency Hz Table gives pulse power PGM in Watts
µs
50 100 400
100
150 150 150
200
150 150 125
500
150 150 100
1ms
150 100 25
10ms
20 - -
Surge current (VR = 50% VRRM)
Tj = 25˚C
Tj = -40˚C
18
0.04
0.03
0.02
30°
60°
90°
120°
180°
1600
1400
1200
1000
800
600
400
0.01
200
0
0.001
0.01
0.1
1
10
Time - (Seconds)
100
Fig. 7 Transient thermal impedance - dc
1000
0
0
200
400
600
800
1000
Sine wave current (Average, per arm)
1200
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
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MP04---590
2200
Power dissipation (Watts, per arm)
1800
1600
1400
1200
1000
800
600
400
80
70
60
50
40
30
20
10
200
0
0
200
400
600
800
1000
1200
1400
0
100
1600
Square wave current (Average, per arm)
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
30°
60°
90°
120°
180°
DC
90
80
200
300 400 500 600 700 800 900 1000
Sine wave current (Average, per arm)
Fig. 9 Maximum permissible casetemperature vs on-state
current at specified conduction angles, sine wave 50/60Hz
100
7000
90
6500
80
6000
70
5500
60
5000
50
4500
40
4000
30
Total power loss - (W)
70
60
50
40
30
20
3500
20
10
3000
0
100 200 300 400 500 600 700 800
1000
1200
1400
Square wave current (Average, per arm)
Fig. 10 Maximum permissible case temperature vs on-state
current at specified conduction angles, square wave 50/60Hz
2500
1000
Max permissible case temp. - (˚C)
Maximum permissible case temperature - (°C)
30°
60°
90°
120°
180°
90
Maximum permissble case temperature - (°C)
2000
100
30°
60°
90°
120°
180°
DC
1200
1400
1600
Power resistive load
Power inductive load 10
Temp resistive load
Temp inductive load
0
1800
2000
2200
dc output current - (A)
Fig. 11 50/60Hz single phase bridge DC output current vs
power loss and maximum permissible case temperature
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MP04---590
9500
9000
8000
90
7500
80
7000
70
6500
60
6000
50
5500
40
5000
30
4500
20
4000
Power resistive or inductive load 10
Temp resistive or inductive load
0
1900
2100
2300 2500
3500
1300
1500
1700
Max permissible case temp. - (˚C)
Total power loss - (W)
8500
dc output current - (A)
Fig. 12 50/60Hz Three phase bridge DC output current vs
power loss and maximum permissible case temperature
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MP04---590
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Nominal weight: 1580g
Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately.
Module outline type code: MP04
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MP04---590
MOUNTING RECOMMENDATIONS
POWER ASSEMBLY CAPABILITY
Adequate heatsinking is required to maintain the base
temperature at 75˚C if full rated current is to be achieved. Power
dissipation may be calculated by use of VT(TO) and rT information
in accordance with standard formulae. We can provide
assistance with calculations or choice of heatsink if required.
The Power Assembly group provides support for those
customers requiring more than the basic semiconductor switch.
Using CAD design tools the group has developed a flexible
range of heatsink / clamping systems in line with advances in
device types and the voltage and current capability of Dynex
semiconductors.
The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build
up and foreign material. Care should be taken to ensure no
foreign particles remain.
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.
After application of thermal compound, place the module
squarely over the mounting holes, (or ‘T’ slots) in the heatsink.
Fit and finger tighten the recommended fixing bolts at each end.
Using a torque wrench, continue to tighten the fixing bolts by
rotating each bolt in turn no more than 1/4 of a revolution at a
time, until the required torque of 6Nm (55lbs.ins) is reached on
all bolts at both ends.
An extensive range of air and liquid cooled assemblies is
available covering the range of circuit designs in general use
today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded
aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air
natural, forced air and liquid cooling (with flow rates) is available
on request.
For further information on device clamps, heatsinks and
assemblies, please contact your nearest sales representative or
customer service office.
It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
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MP04---590
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5371-3 Issue No. 3.1 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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