MP04---590 MP04---590 Dual Thyristor, Thyristor/Diode Module Replaces April 2001 version, DS5371-2.2 DS5371-3.1 October 2001 FEATURES ■ Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint ■ Alumina (Non Toxic) Isolation Medium ■ Integral Water Cooled Heatsink KEY PARAMETERS VDRM IT(AV) ITSM(per arm) Visol Code 1800V 595A 16800A 3000V Circuit HBT APPLICATIONS HBP ■ Motor Control ■ Controlled Rectifier Bridges ■ Heater Control ■ AC Phase Control HBN Fig.1 Circuit diagrams VOLTAGE RATINGS Type Number MP04---590-18 MP04---590-16 MP04---590-14 Repetitive Peak Voltages VDRM VRRM V 1800 1600 1400 Conditions Tvj = 0˚ to 125˚C, IDRM = IRRM = 50mA VDSM = VRSM = VDRM = VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION Order As: MP04HBT590-18 or MP04HBT-16 or MP04HBT14 Module type code: MP04. For further information see Package Details. Fig. 2 Electrical connections - (not to scale) MP04HBP590-18 or MP04HBP-16 or MP04HBP14 MP04HBN590-18 or MP04HBN-16 or MP04HBN14 Note: When ordering, please use the whole part number. 1/10 www.dynexsemi.com MP04---590 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol IT(AV) IT(RMS ITSM I2t ITSM I2t ITSM I2t ITSM I2t Visol Parameter Mean on-state current RMS value Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Isolation voltage Test Conditions Max. Units Tcase = 75˚C 595 A Tcase = 85˚C 505 A 935 A 8.3ms half sine, Tj = 125˚C 16.8 kA VR = 0 1411 X 103 A2s 8.3ms half sine, Tj = 125˚C 13.5 kA VR = 50% VDRM 911 X 103 A2s 15.7 kA VR = 0 1232 X 103 A2s 10ms half sine, Tj = 125˚C 12.6 kA VR = 50% VDRM 794 X 103 A2s 3000 V Half wave resistive load Tcase = 75˚C 10ms half sine, Tj = 125˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2/10 www.dynexsemi.com MP04---590 THERMAL AND MECHANICAL RATINGS Test Conditions Parameter Symbol Min. Max. Units Thermal resistance - junction to case dc - 0.056 ˚C/kW (per thyristor or diode) Half wave - 0.060 ˚C/kW 3 Phase - 0.066 ˚C/kW Thermal resistance - case to heatsink Mounting torque = 5Nm - 0.02 ˚C/kW (per thyristor or diode) with mounting compound Tvj Virtual junction temperature Reverse (blocking) - 125 ˚C Tstg Storage temperature range –40 130 ˚C Rth(j-c) Rth(c-hs) - - - Screw torque Mounting - M6 - 6 (35) Nm (lb.ins) Electrical connections - M10 - 12 (106) Nm (lb.ins) - Weight (nominal) - 1580 g DYNAMIC CHARACTERISTICS - THYRISTOR Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tj = 125˚C - 50 mA dV/dt Linear rate of rise of off-state voltage To 67% VDRM, Tj = 125˚C - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 1500A, gate source 1.5A, - 500 A/µs IRRM/IDRM tr = 0.5µs, Tj = 125˚C VT(TO) rT Threshold voltage At Tvj = 125˚C. See note 1 - 0.85 V On-state slope resistance At Tvj = 125˚C. See note 1 - 0.38 mΩ Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. 3/10 www.dynexsemi.com MP04---590 GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Symbol Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.5 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 200 mA VGD Gate non-trigger voltage At VDRM , Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table fig. 5 150 W PG(AV) Mean gate power 10 W - - CURVES 2500 Measured under pulse conditions 40 1.6 35 1.4 30 1.2 25 1 20 0.8 15 0.6 Peak half sine on-state current - (kA) 1500 1000 500 0.4 ITSM (VR = 0) Tj = 125˚C Min Tj = 125˚C Max 0 0.5 10 I2t value - (A2s x 106) Instantaneous on-state current, IT - (A) 2000 1.0 1.5 2.0 Instantaneous on-state voltage, VT - (V) Fig. 3 Maximum (limit) on-state characteristics 2.5 ITSM (VR = 50% VRRM) 5 I2t (VR = 0) I2t (VR = 50% VRRM) 0 1 2 3 5 6 7 4 8 Pulse length, half sine wave (ms) 9 0.2 0 10 Fig. 4 Sub-cycle surge curves 4/10 www.dynexsemi.com MP04---590 100 Surge current (VR = 0) Gate trigger voltage, VGT - (V) 14 12 10 8 6 10 0 0 Up 1 10 20 30 40 Number of cycles @ 50Hz 50 L r li owe 0.1 0.001 60 0.01 99% Tj = 125˚C mit VGD Region of certain triggering 0.1 1 Gate trigger current, IGT - (A) 10 IFGM Fig. 6 Gate characteristics Fig. 5 Sub-cycle surge curves 0.06 2200 2000 0.05 1800 Power dissipation (Watts, per arm) Thermal resistance junction to case - (°C/W) 9% it 9 lim per 4 2 0W 10 W 50 Peak half sine wave on-state current - (kA) 16 W 20 W 10 5W Pulse width Frequency Hz Table gives pulse power PGM in Watts µs 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1ms 150 100 25 10ms 20 - - Surge current (VR = 50% VRRM) Tj = 25˚C Tj = -40˚C 18 0.04 0.03 0.02 30° 60° 90° 120° 180° 1600 1400 1200 1000 800 600 400 0.01 200 0 0.001 0.01 0.1 1 10 Time - (Seconds) 100 Fig. 7 Transient thermal impedance - dc 1000 0 0 200 400 600 800 1000 Sine wave current (Average, per arm) 1200 Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz 5/10 www.dynexsemi.com MP04---590 2200 Power dissipation (Watts, per arm) 1800 1600 1400 1200 1000 800 600 400 80 70 60 50 40 30 20 10 200 0 0 200 400 600 800 1000 1200 1400 0 100 1600 Square wave current (Average, per arm) Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz 30° 60° 90° 120° 180° DC 90 80 200 300 400 500 600 700 800 900 1000 Sine wave current (Average, per arm) Fig. 9 Maximum permissible casetemperature vs on-state current at specified conduction angles, sine wave 50/60Hz 100 7000 90 6500 80 6000 70 5500 60 5000 50 4500 40 4000 30 Total power loss - (W) 70 60 50 40 30 20 3500 20 10 3000 0 100 200 300 400 500 600 700 800 1000 1200 1400 Square wave current (Average, per arm) Fig. 10 Maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60Hz 2500 1000 Max permissible case temp. - (˚C) Maximum permissible case temperature - (°C) 30° 60° 90° 120° 180° 90 Maximum permissble case temperature - (°C) 2000 100 30° 60° 90° 120° 180° DC 1200 1400 1600 Power resistive load Power inductive load 10 Temp resistive load Temp inductive load 0 1800 2000 2200 dc output current - (A) Fig. 11 50/60Hz single phase bridge DC output current vs power loss and maximum permissible case temperature 6/10 www.dynexsemi.com MP04---590 9500 9000 8000 90 7500 80 7000 70 6500 60 6000 50 5500 40 5000 30 4500 20 4000 Power resistive or inductive load 10 Temp resistive or inductive load 0 1900 2100 2300 2500 3500 1300 1500 1700 Max permissible case temp. - (˚C) Total power loss - (W) 8500 dc output current - (A) Fig. 12 50/60Hz Three phase bridge DC output current vs power loss and maximum permissible case temperature 7/10 www.dynexsemi.com MP04---590 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1580g Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately. Module outline type code: MP04 8/10 www.dynexsemi.com MP04---590 MOUNTING RECOMMENDATIONS POWER ASSEMBLY CAPABILITY Adequate heatsinking is required to maintain the base temperature at 75˚C if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. The heatsink surface must be smooth and flat; a surface finish of N6 (32µin) and a flatness within 0.05mm (0.002") are recommended. Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. After application of thermal compound, place the module squarely over the mounting holes, (or ‘T’ slots) in the heatsink. Fit and finger tighten the recommended fixing bolts at each end. Using a torque wrench, continue to tighten the fixing bolts by rotating each bolt in turn no more than 1/4 of a revolution at a time, until the required torque of 6Nm (55lbs.ins) is reached on all bolts at both ends. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module. 9/10 www.dynexsemi.com MP04---590 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5371-3 Issue No. 3.1 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com