DYNEX TA329Q

TA329..Q
TA329..Q
Asymmetric Thyristor
Advance Information
Replaces March 1998 version, DS4680-2.1
DS4680-3.0 January 2000
KEY PARAMETERS
VDRM
1400V
IT(RMS)
370A
ITSM
2000A
dVdt
1000V/µs
dI/dt
1000A/µs
tq
7.0µs
APPLICATIONS
■ High Frequency Applications
■ High Power Choppers And Inverters
■ Welding
■ Ultrasonic Generators
■ Induction Heating
■ 400Hz UPS
■ PWM Inverters
FEATURES
■ Low Loss Asymmetrical Diffusion Structure
■ High Interdigitated Amplifying Gate
■ Gate Assisted Turn-off With Exclusive Bypass Diode
■ Fully Characterised For Operation up to 40kHz
■ Directly Compatible With 220-480 A.c. Mains
VOLTAGE RATINGS
Type Number
Repetitive Peak
Off-state Voltage
VDRM
V
Repetitive Peak
Reverse Voltage
VRRM
V
1400
1200
1000
10
10
10
TA329 14 Q
TA329 12 Q
TA329 10 Q
Outline type code: MU86.
See Package Details for further information.
Lower voltage grades available.
CURRENT AND SURGE RATINGS
Symbol
Parameter
Conditions
Max.
Units
370
A
2000
A
20 x 103
A2s
Double Side Cooled
RMS value
Half sine wave, duty cycle 50%, Tcase = 80oC,
Tj = 125˚C.
ITSM
Surge (non-repetitive) on-state current
Tj = 125oC, tp = 1ms, VR = 0
I2t
I2t for fusing
tp ≥ 10ms
IT(RMS)
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TA329..Q
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.085
o
Anode dc
-
0.153
o
Cathode dc
-
0.204
o
Double side
-
0.02
o
Single side
-
0.04
o
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
-40
150
o
Clamping force
3.6
4.4
kN
Min.
Max.
Units
Symbol
Parameter
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 4.0kN
with mounting compound
C/W
C/W
C/W
C
Virtual junction temperature
C
C
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
VTM
Maximum on-state voltage
At 600A peak, Tcase = 125oC
-
2.5
V
IRRM
Peak reverse current
At VRRM, Tcase = 125oC
-
30
mA
IDRM
Off-state current
At VDRM, Tcase = 125oC
-
1
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 60% VDRM Tj = 125oC, Gate open circuit
-
1000
V/µs
dI/dt
Rate of rise of on-state current
Gate source 20V, 20Ω
tr ≤ 5µs.
Non-repetitive
-
1000
A/µs
Repetitive
-
500
A/µs
2/10
tq†
Max. gate assisted turn-off time
(with feedback diode)
Tj = 125oC, IT(PK) = 200A,
tp = 25µs (half sine wave),
VR = DF451 Diode voltage drop,
dV/dt = 600V/µs (linear to 60% VDRM),
VGK = -5V
-
7
µs
tq
Max. turn-off time
(with feedback diode)
Tj = 125oC, ITM = 100A,
tp > 100µs, dIR/dt = 30A/µs, VR = 1V,
dV/dt = 600V/µs (linear to 60% VDRM),
Gate open.
-
10
µs
TA329..Q
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
Typ.
Max.
Units
VGT
Gate trigger voltage
VDWM = 12V, RL = 3Ω, Tcase = 25oC
-
4
V
IGT
Gate trigger current
VDWM = 12V, RL = 3Ω, Tcase = 25oC
-
250
mA
VRGM
Peak reverse gate voltage
-
-
7
V
IFGM
Peak forward gate current
-
-
10
A
PGM
Peak gate power
-
-
50
W
Average gate power
-
-
15
W
PG(AV)
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TA329..Q
CURVES
Notes:
1. VD ≤ 600V.
2. VR = DF451 Diode voltage drop.
3. R.C. snubber. C = 0.1µF, R = 33Ω.
4. Double side cooled.
Fig.1 Energy per pulse for sinusoidal pulses.
Notes:
1. VD ≤ 600V.
2. VR = DF451 Diode voltage drop.
3. R.C. snubber. C = 0.1µF, R = 33Ω.
4. Double side cooled.
Fig.2 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C.
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TA329..Q
Notes:
1. VD ≤ 600V.
2. VR = DF451 Diode voltage drop.
3. R.C. snubber. C = 0.1µF, R = 33Ω.
4. Double side cooled.
Fig.3 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C.
Notes:
1. dI/dt = 100A/µs.
2. VD ≤ 600V.
3. VR = DF451 Diode voltage drop.
4. R.C. snubber. C = 0.1µF, R = 33Ω.
5. Double side cooled.
Fig.4 Energy per pulse for trapezoidal pulses
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TA329..Q
Notes:
1. dI/dt = 100A/µs.
2. VD ≤ 600V.
3. VR = DF451 Diode voltage drop.
4. R.C. snubber. C = 0.1µF, R = 33Ω.
5. Double side cooled.
Fig.5 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C.
Notes:
1. dI/dt = 100A/µs.
2. VD ≤ 600V.
3. VR = DF451 Diode voltage drop.
4. R.C. snubber. C = 0.1µF, R = 33Ω.
5. Double side cooled.
Fig.6 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C.
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TA329..Q
Fig.7 Maximum on-state conduction characteristic
Fig.8 Non-repetitive sub-cycle surge on-state current and I2t rating.
Fig.9 Typical variation of effective turn-off time (tq†)
with negative gate bias.
Fig.10 Reverse gate characteristics
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TA329..Q
Fig.11 Gate trigger characteristics
Fig.12 Transient thermal impedance - junction to case
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TA329..Q
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes 3.6 x 2.0 deep
(in both electrodes)
6.3
Cathode tab
Cathode
Ø 42 max
15.0
14.0
Ø19nom
Ø1.5
Gate
Ø19nom
Anode
Ø 38 max
Nominal weight: 50g
Clamping force: 3.5kN ±10%
Lead length: 250mm
Package outine type code: MU86
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Gate triggering and the use of gate characteristics
AN4840
Recommendations for clamping power semiconductors
The effect of temperature on thyristor performance
AN4839
AN4870
Thyristor and diode measurement with a multi-meter
AN4853
Turn-on performance of thyristors in parallel
AN4999
Use of V , r on-state characteristic
AN5001
TO
T
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TA329..Q
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4680-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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