DYNEX DGT408BRP

DGT408BRP
DGT408BRP
Reverse Blocking Gate Turn-off Thyristor
Target Information
DS4415-2.1 February 2002
FEATURES
KEY PARAMETERS
■
Reverse Blocking Capability
ITCM
■
Double Side Cooling
High Reliability In Service
VDRM/VRRM 4500V
■
High Voltage Capability
dVD/dt
1000V/µs
■
■
Fault Protection Without Fuses
diT/dt
300A/µs
■
High Surge Current Capability
■
Turn-off Capability Allows Reduction In Equipment Size
And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
800A
APPLICATIONS
■
Variable speed A.C. motor drive inverters (VSD-AC)
■
Uninterruptable Power Supplies
■
High Voltage Converters
■
Choppers
■
Welding
■
Induction Heating
■
DC/DC Converters.
Outline type code: P
(See Package Details for further information)
Fig. 1 Package outline
VOLTAGE RATINGS
Type Number
DGT408BRP4540
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
VRRM
V
V
4500
4500
Conditions
Tvj = 115oC, IDM = 50mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
800
A
ITCM
Repetitive peak controllable on-state current VD = VDRM, Tj = 115oC, diGQ/dt = 30A/µs, Cs = 2.0µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
-
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
-
A
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DGT408BRP
SURGE RATINGS
Symbol
ITSM
I2t
diT/dt
dVD/dt
LS
Conditions
Parameter
Max.
Units
Surge (non-repetitive) on-state current
10ms half sine. Tj = 115oC
6.0
kA
I2t for fusing
10ms half sine. Tj =115oC
0.18 x 106
A2s
Critical rate of rise of on-state current
VD = 3000V, IT = 800A, Tj = 115oC, IFG > 30A,
Rise time > 1.5µs
300
A/µs
To 66% VDRM; RGK ≤ 1.5Ω, Tj = 115oC
-
V/µs
To 66% VDRM; VRG = -2V, Tj = 115oC
1000
V/µs
200
nH
Rate of rise of off-state voltage
-
Peak stray inductance in snubber circuit
GATE RATINGS
Symbol
Parameter
Min.
Max.
Units
-
16
V
20
70
A
Average forward gate power
-
10
W
Peak reverse gate power
-
15
kW
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
PFG(AV)
PRGM
Conditions
This value maybe exceeded during turn-off
diGQ/dt
Rate of rise of reverse gate current
15
60
A/µs
tON(min)
Minimum permissable on time
20
-
µs
tOFF(min)
Minimum permissable off time
100
-
µs
Min.
Max.
Units
Double side cooled
-
0.041
o
Anode side cooled
-
0.07
o
Cathode side cooled
-
0.1
o
-
0.009
o
-
125
o
Operating junction/storage temperature range
-40
125
o
Clamping force
11.0
15.0
kN
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
-
Conditions
Clamping force 12.0kN
With mounting compound
per contact
C/W
C/W
C/W
C/W
C
C
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DGT408BRP
CHARACTERISTICS
Tj = 115oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 800A peak, IG(ON) = 4A d.c.
-
4.7
V
IDM
Peak off-state current
VDRM = 4500V, VRG = 0V
-
50
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
1.0
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
1.5
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 3000V
-
1200
mJ
td
Delay time
IT = 800A, dIT/dt = 300A/µs
-
1.5
µs
tr
Rise time
IFG = 30A, rise time < 1.5µs
-
5.0
µs
Turn-off energy
-
3000
mJ
tgs
Storage time
-
15.0
µs
tgf
Fall time
IT = 800A, VDM = 3000V
-
1.5
µs
tgq
Gate controlled turn-off time
Snubber Cap Cs = 2.0µF,
-
15.5
µs
QGQ
Turn-off gate charge
diGQ/dt = 30A/µs
-
-
µC
QGQT
Total turn-off gate charge
-
-
µC
IGQM
Peak reverse gate current
-
850
A
EOFF
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Anode voltage and current
DGT408BRP
0.9VD
0.9IT
dVD/dt
VD
VD
IT
0.1VD
td
VDM
ITAIL
VDP
tgs
tr
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Recommended gate conditions:
ITCM = 800A
IFG = 30A
IG(ON) = 4A d.c.
tw1(min) = 20µs
IGQM = 300A
diGQ/dt = 30A/µs
QGQ =
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
Fig.2 General switching waveforms
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DGT408BRP
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep
Auxiliary cathode
20˚
Gate
Cathode
18 nom
27.0
25.5
Ø51 nom
Ø38 nom
Ø38 nom
Ø56 max
Ø57.5 max
Ø63.5 max
Anode
Weight: 350g
Nominal weight: 350g
Clamping force: 12kN ±10%
Lead length: 505mm
Package outine type code: P
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DGT408BRP
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
CUSTOMER SERVICES
Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS4415-2 Issue No. 2.1 February 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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