FUJI 1MBI150NK-060

n Outline Drawing
IGBT MODULE ( N series )
n Features
• Square RBSOA
• Low Saturation Voltage
• Overcurrent Limiting Function (~3 Times Rated Current)
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( Tc=25°C)
Symbols
VCES
VGES
Continuous
IC
1ms
IC PULSE
Continuous
-IC
1ms
-IC PULSE
PC
Tj
Tstg
A.C. 1min.
Vis
Mounting *1
Terminals *1
Ratings
600
± 20
150
300
150
300
600
+150
-40 ∼ +125
2500
3.5
3.5
Units
V
V
A
W
°C
°C
V
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Currrent
( at Tj=25°C )
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
IRRM
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=150mA
VGE=15V IC=150A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=150A
VGE=± 15V
RG=16Ω
IF=150A VGE=0V
IF=150A
VR=600V
Min.
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
4.5
9900
2200
1000
0.6
0.2
0.6
0.2
Max.
1.0
15
7.5
2.8
Units
mA
µA
V
V
pF
1.2
0.6
1.0
0.35
3.0
300
1.0
µs
V
ns
mA
• Thermal Characteristics
Items
Thermal Resistance
Typ.
0.05
Max.
0.21
0.47
Units
°C/W
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T j=25°C
T j=125°C
350
350
V GE=20V,15V,12V
V GE=20V,15V, 12V
[A]
300
C
250
Collector current : I
Collector current : I
C
[A]
300
10V
200
150
100
50
250
10V
200
150
100
8V
50
8V
0
0
0
1
2
3
4
5
6
0
5
6
Collector-Emitter vs. Gate-Emitter voltage
T j=125°C
10
[V]
CE
Collector-Emitter voltage : V
8
6
4
IC=
300A
150A
2
75A
8
6
I C=
4
300A
150A
2
75A
0
0
5
10
15
20
25
0
5
Gate-Emitter voltage : V GE [V]
10
15
20
25
Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current
Switching time vs. Collector current
V CC =300V, R G =16 Ω , V GE =±15V, Tj=25°C
V CC =300V, R G =16 Ω , V GE =±15V, Tj=125°C
1000
, t r , t off , t f [nsec]
t on
t off
on
tr
tf
Switching time : t
100
10
t off
t on
, t r , t off , t f [nsec]
1000
on
4
T j=25°C
0
Switching time : t
3
Collector-Emitter vs. Gate-Emitter voltage
[V]
CE
2
Collector-Emitter voltage : V CE [V]
10
Collector-Emitter voltage : V
1
Collector-Emitter voltage : V CE [V]
tr
tf
100
10
0
50
100
150
200
Collector current : I C [A]
250
0
50
100
150
200
Collector current : I C [A]
250
Switching time vs. R G
Dynamic input characteristics
V CC =300V, I C=150A, V GE =±15V, Tj=25°C
T j=25°C
tr
tf
100
10
300V
400
300
15
200
10
100
5
0
50
10
0
100
200
300
400
500
600
700
Gate resistance : R G [ Ω ]
Gate charge : Q G [nC]
Forward current vs. Forward voltage
Reverse recovery characteristics
V GE =OV
t rr , I rr vs. I F
800
0
900
350
[A]
rr
[A]
Reverse recovery current : I
200
150
100
50
t rr 125°C
100
I rr 125°C
Reverse recovery time
F
Forward current : I
250
: trr [nsec]
T j=125°C 25°C
300
0
t rr 25°C
I rr 25°C
10
0
1
2
3
4
0
50
100
150
200
250
Forward voltage : V F [V]
Forward current : I F [A]
Transient thermal resistance
+V GE =15V, -V GE <15V, T j<125°C, R G >16 Ω
Reversed biased safe operating area
1
1400
[°C/W]
Diode
C
Collector current : I
th(j-c)
Thermal resistance : R
[A]
1200
IGBT
0,1
1000
SCSOA
(non-repetitive pulse)
800
600
400
200
0,01
0,001
RBSOA (Repetitive pulse)
0
0,01
0,1
Pulse width : PW [sec]
1
20
400V
0
100
200
300
400
500
Collector-Emitter voltage : V CE [V]
600
Gate Emitter Voltage : V GE [V]
[V]
CE
Collector-Emitter voltage : V
Switching time : t
25
V CC =200V
t on
t off
1000
on
, t r , t off , t f [nsec]
500
Capacitance vs. Collector-Emitter voltage
Switching loss vs. Collector current
T j=25°C
V CC =300V, R G =16 Ω , V GE =±15V
12
10
E off 25°C
C ies
E on 125°C
6
E on 25°C
4
1
C oes
2
E rr 125°C
Capacitance : C
Switching loss : E
10
ies
8
, C oes , C res [nF]
E off 125°C
on
, E off , Err [mJ/cycle]
14
C res
E rr 25°C
0
0
50
100
150
200
250
300
0
Collector Current : I C [A]
5
10
15
20
25
30
Collector-Emitter Voltage : V CE [V]
Fuji Electric GmbH
Fuji Electric (UK) Ltd.
Lyoner Straße 26
Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M
London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0
Fax.: 069 - 66 90 29 - 56
Tel.: 0181 - 233 11 30
Fax.: 0181 - 233 11 60
P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com
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