FUJI 1MBI300NA-120

n Outline Drawing
IGBT MODULE ( N series )
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Equivalent Circuit
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( Tc=25°C)
Symbols
VCES
VGES
Continuous
IC
1ms
IC PULSE
Continuous
-IC
1ms
-IC PULSE
PC
Tj
Tstg
A.C. 1min.
Vis
Mounting *1
Terminals *2
Terminals *3
Ratings
1200
± 20
300
600
300
600
2100
+150
-40 ∼ +125
2500
3.5
4.5
1.7
Units
V
V
A
W
°C
°C
V
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
*3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
• Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at Tj=25°C )
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
Test Conditions
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=300mA
VGE=15V IC=300A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=300A
VGE=± 15V
RG=2.7Ω
IF=300A VGE=0V
IF=300A
Min.
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
4.5
48000
17400
15480
0.65
0.25
0.95
0.35
Max.
4.0
60
7.5
3.3
Units
mA
µA
V
V
pF
1.2
0.6
1.5
0.5
3.0
350
µs
V
ns
• Thermal Characteristics
Items
Thermal Resistance
Typ.
0.0125
Max.
0.06
0.17
Units
°C/W
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T j=25°C
T j=125°C
V GE = 20V, 15V, 12V, 10V
V GE = 20V, 15V, 12V, 10V
600
400
200
8V
400
Collector current : I
Collector current : I
C
C
[A]
[A]
600
8V
200
0
0
0
1
2
3
4
Collector-Emitter voltage : V CE [V]
5
0
3
4
5
Collector-Emitter vs. Gate-Emitter voltage
Collector-Emitter vs. Gate-Emitter voltage
T j=25°C
T j=125°C
10
[V]
[V]
CE
8
Collector-Emitter voltage V
CE
2
Collector-Emitter voltage : V CE [V]
10
Collector-Emitter voltage :V
1
6
IC=
4
600A
300A
2
150A
0
8
6
I C=
4
600A
300A
2
150A
0
0
5
10
15
20
25
0
Gate-Emitter voltage : V GE [V]
5
10
15
20
25
Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current
Switching time vs. Collector current
V CC =600V, R G=2.7 Ω , V GE =±15V, Tj=25°C
V CC =600V, R G =2.7 Ω , V GE ±15V, Tj=125°C
t off
1000
100
10
400
Collector current : I C [A]
tr
on, t r, t off, t f
tr
Switching time : t
Switching time : t
on, t r, t off, t f
tf
200
tf
[nsec]
[nsec]
t on
0
t on
1000
t off
600
100
10
0
200
400
Collector current : I C [A]
600
Switching time vs. R G
Dynamic input characteristics
V CC =600V, I C =300A, V GE =±15V, Tj =25°C
T j =25°C
1000
t off
600V
[V]
[nsec]
800
1000
tr
tf
100
1
600
15
400
10
200
5
0
0
10
0
1000 1500 2000 2500 3000 3500 4000
500
Gate resistance : R G [ Ω ]
Gate charge : Q G [nC]
Forward current vs. Forward voltage
Reverse recovery characteristics
V GE =OV
t rr, Irr vs. I F
T j =125°C 25°C
[A]
rr
[A]
Reverse recovery time
200
Irr 125°C
:t
Reverse recovery current : I
F
400
t rr 125°C
rr [nsec]
600
Forward current : I
20
800V
CE
t on
Collector-Emitter voltage : V
on, t r, t off, t f
Switching time : t
25
V CC =400V
Irr 25°C
trr 25°C
100
0
0
1
2
3
4
5
0
200
Forward voltage : V F [V]
400
600
Forward current : I F [A]
Reversed biased safe operating area
Transient thermal resistance
+V GE =15V, -V GE <15V, T j <125°C, R G >2.7 Ω
3000
2500
0,1
[A]
IGBT
2000
SCSOA
C
Collector current : I
Thermal resistance : R
th(j-c)
[°C/W]
Diode
0,01
(non-repetitive pulse)
1500
1000
500
RBSOA (Repetitive pulse)
0,001
0,001
0
0,01
0,1
Pulse width : PW [sec]
1
0
200
400
600
800
1000
Collector-Emitter voltage : V CE [V]
1200
Capacitance vs. Collector-Emitter voltage
Switching loss vs. Collector current
T j=25°C
V CC =600V, R G =2.7 Ω , V GE =±15V
E off 125°C
Switching loss : E
50
E on 125°C
E on 25°C
25
E rr 125°C
E rr 25°C
C oes , C res [nF]
E off 25°C
ies ,
75
100
C ies
10
Capacitance : C
100
on,
E off, E rr [mJ/cycle]
125
C oes
C res
1
0
0
100
200
300
400
500
600
0
Collector Current : I C [A]
5
10
15
20
25
30
Collector-Emitter Voltage : V CE [V]
Fuji Electric GmbH
Fuji Electric (UK) Ltd.
Lyoner Straße 26
Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M
London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0
Fax.: 069 - 66 90 29 - 56
Tel.: 0181 - 233 11 30
Fax.: 0181 - 233 11 60
P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com
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