n Outline Drawing IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current) n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Terminals *3 Ratings 600 ± 20 600 1200 600 1200 2000 +150 -40 ∼ +125 2500 3.5 4.5 1.7 Units V V A W °C °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) *3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=600mA VGE=15V IC=600A VGE=0V VCE=10V f=1MHz VCC=300V IC=600A VGE=± 15V RG=2.7Ω IF=600A VGE=0V IF=600A Min. Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 4.5 39600 8800 4000 0.6 0.2 0.6 0.2 Max. 4.0 60 7.5 2.8 Units mA µA V V pF 1.2 0.6 1.0 0.35 3.0 300 µs V ns • Thermal Characteristics Items Thermal Resistance Typ. 0.0125 Max. 0.063 0.11 Units °C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=25°C T j=125°C 1400 1400 V GE =20V,15V,12V, V GE =20V,15V,12V 1200 C 1000 10V 800 600 400 Collector current : I Collector current : I C [A] [A] 1200 1000 10V 800 600 400 200 200 8V 8V 0 0 0 1 2 3 4 5 0 3 4 Collector-Emitter vs. Gate-Emitter voltage T j=25°C T j=125°C CE [V] [V] 10 Collector-Emitter voltage V 8 6 IC= 4 1200A 600A 2 300A 0 8 6 IC= 4 1200A 600A 2 300A 0 0 5 10 15 20 25 0 5 Gate-Emitter voltage : V GE [V] 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC =300V, R G =2.7 Ω , V GE ±15V, T j=25°C V CC =300V, R G =2.7 Ω , V GE =±15V, Tj=125°C 1000 1000 t off on, t r, t off, t f tr tf Switching time : t 100 10 t on [nsec] t off tr on, t r, t off, t f [nsec] t on Switching time : t 5 Collector-Emitter vs. Gate-Emitter voltage 10 CE 2 Collector-Emitter voltage : V CE [V] Collector-Emitter voltage : V CE [V] Collector-Emitter voltage :V 1 tf 100 10 0 200 400 600 800 Collector current : I C [A] 1000 0 200 400 600 800 Collector current : I C [A] 1000 Switching time vs. R G Dynamic input characteristics T j= 2 5 ° C V CC =300V, I C = 6 0 0 A , V GE = ± 1 5 V , T j = 2 5 ° C 25 V CC = 2 0 0 V 300V [V] ton toff tf 100 [V] tr 20 300 15 200 10 100 5 Gate-Emitter Voltage : V 400 CE 400V GE 1000 Collector-Emitter voltage : V Switching time : t on, t r, t off, t f [nsec] 500 10 0 0 1 10 0 500 1000 Gate resistance : R G [ Ω ] 1500 2000 2500 3000 G a t e c h a r g e : Q G [nC] Forward current vs. Forward voltage Reverse recovery characteristics V GE = O V t rr, I rr vs. I F 1400 I rr 1 2 5 ° C rr 1000 600 400 200 Reverse recovery time 800 I rr 2 5 ° C t rr 1 2 5 ° C :t Reverse recovery current : I F [A] [A] 1200 [nsec] 25°C rr T j= 1 2 5 ° C Forward current : I 3500 100 t rr 2 5 ° C 0 0 1 2 3 4 0 200 400 600 800 1000 Forward current : I F [A] Forward voltage : V F [V] Reversed biased safe operating area + V GE = 1 5 V , - V GE < 1 5 V , T j < 1 2 5 ° C , R G > 2.7 Ω Transient thermal resistance 6000 5000 Thermal resistance : R Collector current : I C [A] 0,1 th(j-c) [°C/W] Diode IGBT 0,01 4000 SCSOA (non-repetitive pulse) 3000 2000 1000 RBSOA (Repetitive pulse) 0 0,001 0,01 0,1 Pulse width : PW [sec] 1 0 100 200 300 400 500 Collector-Emitter voltage : V C E [V] 600 Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage V CC=300V, R G =2.7 Ω , V GE =±15V T j=25°C 30 E on 125°C E on 25°C 20 10 E rr 125°C , C oes , C res [nF] E off 25°C ies 40 C ies 10 Capacitance : C Switching loss : E 100 E off 125°C 50 on , E off , E rr [mJ/cycle] 60 E rr 25°C C oes C res 1 0 0 200 400 600 800 1000 0 Collector Current : I C [A] Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 5 10 15 20 25 30 Collector-Emitter Voltage : V CE [V] P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com 35