FUJI 2SK1388

2SK1388
N-channel MOS-FET
F-III Series
30V
> Features
-
0,022Ω 35A
60W
> Outline Drawing
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Forward Transconductance
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Continous Reverse Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V DS
ID
I D(puls)
I DR
V GS
PD
T ch
T stg
Rating
30
35
140
35
±20
60
150
-55 ~ +150
Unit
V
A
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Symbol
V (BR)DSS
V GS(th)
I DSS
Gate Source Leakage Current
Drain Source On-State Resistance
I
R
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
g
C
C
C
t
t
t
t
V
t
Turn-Off-Time toff (ton=td(off)+tf)
Diode Forward On-Voltage
Reverse Recovery Time
- Thermal Characteristics
Item
Thermal Resistance
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
SD
rr
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=30V
Tch=25°C
VGS=0V
Tch=125°C
VGS=±20V
VDS=0V
ID=17,5A
VGS=4V
ID=17,5A
VGS=10V
ID=17,5A
VDS=12V
VDS=25V
VGS=0V
f=1MHz
VCC=12V
ID=35A
VGS=10V
RGS=25 Ω
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Min.
30
1,0
Test conditions
channel to air
channel to case
Min.
8
Typ.
Max.
1,5
10
0,2
10
0,025
0,016
17
1750
800
400
25
100
300
180
1,35
100
2,5
500
1,0
100
0,037
0,022
Typ.
Max.
75
2,08
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
2630
1200
600
38
150
450
270
2,0
Unit
V
V
µA
mA
nA
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Unit
°C/W
°C/W
2SK1388
N-channel MOS-FET
30V
0,022Ω 35A
F-III Series
60W
> Characteristics
Typical Output Characteristics
↑
Drain-Source-On-State Resistance vs. Tch
↑
→
Tch [°C]
Typical Drain-Source-On-State-Resistance vs. ID
→
Gate Threshold Voltage vs. Tch
↑
Tch [°C]
VDS [V]
→
↑
↑
VGS [V]
IF [A]
8
Qg [nC]
→
Forward Characteristics of Reverse Diode
VDS [V]
C [nF]
→
Typical Input Charge
↑
7
6
VGS(th) [V]
5
ID [A]
Typical Capacitance vs. VDS
→
VGS [V]
gfs [S]
RDS(ON) [Ω]
ID [A]
↑
→
Typical Forward Transconductance vs. ID
↑
4
3
ID [A]
ID [A]
VDS [V]
↑
↑
2
RDS(ON) [Ω]
1
Typical Transfer Characteristics
9
→
VSD [V]
→
Allowable Power Dissipation vs. TC
Zth(ch-c) [K/W]
↑
10
11
PD [W]
↑
Transient Thermal impedance
Tc [°C]
→
t [s]
This specification is subject to change without notice!
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