IGBT MODULE ( N series ) n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Forward Current Surge Current Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque *1 Terminal Screw Torque *1 Symbols VCES VGES IC IC PULSE -IC PULSE PC VCES VCES IC IC PULSE PC VRRM IF(AV) IFSM Tj TStg VISO Test Conditions Continuous 1ms Continuous 1 device Continuous 1ms 1 device 10ms A.C. 1min. Ratings 1200 ± 20 50 100 50 400 1200 ± 20 25 50 200 1200 1 50 +150 -40 ∼ +125 2500 3.5 3.5 Units V A W V A W V A °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) n Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current Reverse Recovery Time Symbols ICES IGES VGE(th) VCE(sat) Cies ton toff tf VF trr ICES IGES VCE(sat) ton toff tf IRRM trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=50mA VGE=15V IC=50A f=1MHz, VGE=0V, VCE=10V VCC=600V IC = 50A VGE=±15V RG = 24Ω IF=50A VGE=0V -di A IF=50A; VGE=-10V; /dt=150 /µs VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=15V IC=25A VCC=600V IC = 25A VGE=±15V RG = 51Ω VR=1200V Min. Max. 3.0 15 4.5 7.5 3.3 8000 (typ.) 1.2 1.5 0.5 3.0 350 1.0 100 3.3 1.2 1.5 0.5 1.0 600 Units mA µA V pF µs V ns mA nA V µs mA ns n Thermal Characteristics Items Symbols Thermal Resistance (1 device) Rth(j-c) Contact Thermal Resistance Rth(c-f) Test Conditions Inverter IGBT Inverter FRD Brake IGBT With Thermal Compound Min. Max. 0.31 0.85 0.63 0.05 (typ.) Units °C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=125°C T j=25°C 125 125 V GE=20V,15V,12V,10V, V GE =20V,15V,12V,10V 100 75 Collector current : I Collector current : I C C [A] [A] 100 50 8V 25 1 2 3 4 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage T j=25°C T j=125°C CE [V] 10 [V] 8 Collector-Emitter voltage : V CE 8V 0 5 10 Collector-Emitter voltage : V 50 25 0 0 75 6 4 IC= 2 100A 50A 25A 0 8 6 IC= 4 100A 50A 25A 2 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V GE [V] 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC =600V, R G =24 Ω , V GE =±15V, Tj=25°C V CC =600V, R G =24 Ω , V GE =±15V, Tj=125°C 1000 t off t on tf , t r , t off , t f [nsec] 1000 tf tr Switching time : t on 100 Switching time : t on , t r , t off , t f [nsec] t off t on 10 tr 100 10 0 25 50 Collector current : I C [A] 75 100 0 25 50 Collector current : I C [A] 75 100 Switching time vs. R G Dynamic input characteristics V CC =600V, I C=50A, V GE =±15V, Tj=25°C T j=25°C 25 CE 1000 tr tf 100 10 V CC =400V 600V 20 800V 800 Collector-Emitter voltage : V Switching time : t [V] t off t on on , t r , t off , t f [nsec] 1000 600 15 400 10 200 5 0 100 0 100 200 300 400 500 Gate resistance : R G [ W ] Gate charge : Q G [nC] Forward current vs. Forward voltage Reverse recovery characteristics V GE =OV t rr , I rr vs. I F 0 700 600 125 50 25 [nsec] t rr 125°C t rr 25°C rr :t [A] rr Reverse recovery current : I [A] F Forward current : I 75 Reverse recovery time T j=125°C 25°C 100 100 I rr 125°C I rr 25°C 10 0 0 1 2 3 4 5 0 25 50 75 100 Forward voltage : V F [V] Forward current : I F [A] Transient thermal resistance +V GE =15V, -V GE <15V, T j<125°C, R G >24 Ω Reversed biased safe operating area 1 500 Diode [°C/W] Brake IGBT C Collector current : I th(j-c) Thermal resistance : R [A] 400 IGBT 0,1 SCSOA 300 (non-repetitive pulse) 200 100 RBSOA (Repetitive pulse) 0,01 0,001 0,01 0,1 Pulse width : PW [sec] 1 0 0 200 400 600 800 1000 Collector-Emitter voltage : V CE [V] 1200 Capacitance vs. Collector-Emitter voltage Switching loss vs. Collector current T j=25°C V CC =600V, R G =24 Ω , V GE =±15V 10 E on 25°C E off 25°C 5 E rr 125°C , C oes , C res [nF] E on 125°C E off 125°C 10 C ies ies 15 Capacitance : C Switching loss : E on , E off , E rr [mJ/cycle] 20 1 C oes C res E rr 25°C 0,1 0 0 25 50 Collector Current : I C [A] 75 100 0 5 10 15 20 25 Collector-Emitter Voltage : V CE [V] 30 35 Brake Chopper IGBT Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j =125°C T j =25°C 60 60 V GE =20V,15V,12V,10V, 40 40 C [A] 50 30 20 8V Collector current : I Collector current : I C [A] V GE =20V,15V,12V,10V 50 10 0 0 1 2 3 4 5 0 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage T j =25°C T j =125°C [V] CE [V] 10 Collector-Emitter voltage : V 8 6 4 IC= 2 50A 25A 12.5A 0 8 6 4 IC= 2 50A 25A 12.5A 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V GE [V] 5 10 15 20 Switching time vs. Collector current Switching time vs. Collector current V CC =600V, R G =51 Ω , V GE =±15V, Tj =25°C V CC =600V, R G =51 Ω , V GE =±15V, Tj =125°C tf tr Switching time : t Switching time : t on 100 10 toff ton tf tr 1000 , t r , t off , t f [nsec] , t r , t off , t f [nsec] t off t on 100 10 0 25 Gate-Emitter voltage : V GE [V] 1000 on 1 Collector-Emitter voltage : V CE [V] 10 CE 8V 20 10 0 Collector-Emitter voltage : V 30 20 Collector current : I C [A] 40 0 20 Collector current : I C [A] 40 Brake Chopper IGBT Switching time vs. R G Dynamic input characteristics T j =25°C V CC =600V, I C =25A, V GE =±15V, Tj =25°C 25 [V] CE Collector-Emitter voltage : V Switching time : t V CC =400V t off t on 1000 tr on , t r , t off , t f [nsec] 1000 tf 100 600V 800 600 15 400 10 200 5 0 10 100 0 400 Switching loss vs. Collector current 0 500 V CC =600V, R G =51 Ω , V GE =±15V , E off , E rr [mJ/cycle] 6 [A] C SCSOA 150 on (non-repetitive pulse) 100 50 Switching loss : E Collector current : I 300 Reversed biased safe operating area 200 RBSOA (Repetitive pulse) 0 0 200 400 600 800 1000 T j =25°C 10 C ies 1 C oes C res 0,1 5 10 15 20 25 Collector-Emitter Voltage : V CE [V] 4 E on 125°C E off 125°C 3 E on 25°C 2 E off 25°C E rr 125°C 1 E rr 25°C 0 10 20 30 Collector Current : I C [A] Capacitance vs. Collector-Emitter voltage 0 5 0 1200 Collector-Emitter voltage : V CE [V] , C oes , C res [nF] 200 Gate charge : Q G [nC] 250 ies 100 Gate resistance : R G [ Ω ] +V GE =15V, -V GE <15V, T j <125°C, R G >51 Ω Capacitance : C 20 800V 30 35 40 50 Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708 - Dallas, TX -75370 Phone (972)381-9991 233-0481(fax) - www.collmer.com P.O. Box 702708 Dallas, TX - (972) (972)233-1589 733-1700Fax - (972)