HITACHI 2SA673AK

2SA673A(K)
Silicon PNP Epitaxial
Application
• Low frequency amplifier
• Medium speed switching
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA673A(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Emitter to base voltage
VEBO
–4
V
Collector current
IC
–0.5
A
Collector power dissipation
PC
0.4
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
2
2SA673A(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–50
—
—
V
I C = –10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
–50
—
—
V
I C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–4
—
—
V
I E = –10 µA, IC = 0
Collector cutoff current
I CBO
—
—
–0.5
µA
VCB = –20 V, IE = 0
Emitter cutoff current
I EBO
—
—
–0.5
µA
VEB = –3 V, IC = 0
Base to emitter voltage
VBE
—
–0.64
—
V
VEB = –3 V, IC = –10 mA
Collector to emitter saturation
voltage
VCE(sat)
—
–0.2
–0.6
V
I C = –150 mA, IB = –15 mA*2
Base to emitter saturation
voltage
VBE(sat)
—
–0.87
—
V
I C = –150 mA, IB = –15 mA*2
DC current transfer ratio
hFE*1
60
—
320
VCE = –3 V, IC = –10 mA
hFE
10
—
—
VCE = –3 V, IC = –500 mA*2
Gain bandwidth product
fT
—
120
—
MHz
VCE = –3 V, IC = –10 mA
Turn on time
t on
—
0.3
—
µs
VCC = –10.3 V
Turn off time
t off
—
0.6
—
µs
I C = 10 IB1 = –10 IB2 = –10 mA
Storage time
t stg
—
0.4
—
µs
VCC = –5 V,
I C = IB1 = IB2 = –20 mA
Notes: 1. The 2SA673A(K) is grouped by hFE as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
See 2SA673A except for the above – mentioned characteristic curves.
3
2SA673A(K)
Switching Time Test Circuit
Switching Time Test Circuit
ton, toff Test Circuit
tstg Test Circuit
D.U.T.
1.0 215
CRT
D.U.T.
6k
P.G.
tr, tf ≤ 15 ns
PW ≥ 5 µs
duty ratio ≤ 10%
1k
50
6k
0.002
0.002
6V
+ –
50
+ –
50
200
–10.3 V
Unit R : Q
C : µF
P.G.
tr ≤ 5 ns
PW ≥ 5 µs
duty ratio ≤ 2%
Response Waveform
0
Input
–13 V
0
Output
4
240
0.002
+ –
50
Response Waveform
10%
90%
10%
90%
ton
–7 V
100
0.002
– +
50
CRT
toff
9V
Input
0
0
Output
10%
10%
tstg
–5 V
Unit R : Q
C : µF
600
400
200
Base to Emitter Saturation Voltage VBE(sat) (V)
0
100
150
50
Ambient Temperature Ta (°C)
Base to Emitter Saturation Voltage vs.
Collector Current
–1.1
–1.0
IC = 10 IB
–0.9
–0.8
–0.7
–0.6
–0.5
–25
0
25
50
C
75°
=
Ta
–0.4
–0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 –100 –200 –500
Collector Current IC (mA)
Collector to Emitter Saturation
Voltage vs. Collector Current
–0.7
–0.6
IC = 10 IB
–0.5
–0.4
–0.3
–0.2
–0.1
0
–0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 –100 –200 –500
Collector Current IC (mA)
Input and Output Capacitance
vs. voltage
Collector Output Capacitance Cob (pF)
Emitter Input Capacitance Cib (pF)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
Collector to Emitter Saturation Voltage VCE(sat) (V)
2SA673A(K)
70
f = 1 MHz
60
50
Cib(IC = 0)
40
30
20
Cob(IE = 0)
10
0
–0.1
–0.3
–1.0
–3
–10
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
–30
5
2SA673A(K)
Switcing Time vs. Collector Current
1,000
VCC = –10.3 V
IC = 10 IB1 = –10 IB2
Swiching Time t (ns)
500
toff
tstg
200
100
50
ton
td
20
10
–5
6
–10 –20
–50 –100 –200
Collector Current IC (mA)
–500
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.