HITACHI 2SD1368

2SD1368
Silicon NPN Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SB1002
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1368
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
6
V
Collector current
IC
1
A
1.5
A
1
W
Collector peak current
iC(peak)*
1
2
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
100
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
50
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
6
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.1
µA
VCB = 80 V, IE = 0
Emitter cutoff current
I EBO
—
—
0.1
µA
VEB = 4 V, IC = 0
100
—
500
1
DC current transfer ratio
hFE*
Collector to emitter saturation
voltage
VCE(sat)
—
—
0.3
V
I C = 1 A, IB = 0.1 A, Pulse
Base to emitter saturation
voltage
VBE(sat)
—
—
1.2
V
I C = 1 A, IB = 0.1 A, Pulse
Gain bandwidth product
fT
—
100
—
MHz
VCE = 2 V, IC = 10 mA, Pulse
Collector output capacitance
Cob
—
20
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SD1368 is grouped by h FE as follows.
Mark
CA
CB
CC
hFE
100 to 200
160 to 200
250 to 500
See characteristic curves of 2SD789.
2
VCE = 2 V, IC = 0.1 A
2SD1368
Maximum Collector Dissipation Curve
Collector Power Dissipation PC (W)
(on the alumina ceramic board)
1.2
0.8
0.4
0
50
100
150
Ambient Temperature Ta (°C)
3
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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