2SD1605 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1105 Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 3 A Collector peak current IC(peak) 6 A 30 W 150 °C –55 to +150 °C 3 A 1 Collector power dissipation PC* Junction temperature Tj Storage temperature Tstg C to E diode forward current ID * Note: 1. Value at TC = 25°C. 1 2SD1605 Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage 120 — — V IC = 25 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V IE = 50 mA, IC = 0 Collector cutoff current ICBO — — 100 µA VCB = 120 V, IE = 0 ICEO — — 10 µA VCE = 100 V, RBE = ∞ DC current transfer ratio hFE 1000 — 20000 Collector to emitter saturation VCE(sat)1 — — 1.5 V IC = 1.5 A, IB = 3 mA* voltage VCE(sat)2 — — 3.0 V IC = 3 A, IB = 30 mA* Base to emitter saturation VBE(sat)1 — — 2.0 V IC = 1.5 A, IB = 3 mA* voltage VBE(sat)2 — — 3.5 V IC = 3 A, IB = 30 mA* C to E diode forward voltage VD — — 3.0 V ID = 3 A* Turn on time ton — 0.7 — µs IC = 1.5 A, IB1 = –IB2 = 3 mA Storage time tstg — 7.0 — µs Fall time tf — 1.0 — µs Note: 2 Symbol 1. Pulse test. VCE = 3 V, IC = 1.5 A 1 1 1 1 1 2SD1605 Maximum Channel Dissipation Curve Collector power dissipation PC (W) 45 30 15 0 50 100 Case temperature TC (°C) 150 Area of Safe Operation 10 10 0µ IC(max) 3 s 1m s 1.0 s n(T tio era 0.3 0m Op =1 DC PW Collector current IC (A) 1 µs iC(peak) 0.1 C ) Ta = 25°C 1 shot pulse 5°C =2 0.03 0.01 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics Collector current IC (A) 5 3.0 5 2. 2.0 1.5 1.0 4 3 .5 mA IB = 0 2 1 Ta = 25°C IB = 0 0 1 2 3 4 Collector to emitter voltage VCE (V) 5 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 30,000 10,000 3,000 1,000 300 100 30 0.1 Ta 5°C =7 °C 25 °C –25 VCE = 3 V Pulse 0.3 1.0 3 Collector current IC (A) 10 3 2SD1605 Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 10 200 3 500 VBE(sat) 1.0 VCE(sat) 500 0.3 IC/IB = 200 0.1 Ta = 25°C 0.03 0.01 0.1 1.0 3 0.3 Collector current IC (A) 10 Switching Time vs. Collector Current 10 tstg Switching time t (µs) 3 1.0 tf ton 0.3 Ta = 25°C 0.1 0.03 0.01 0.1 VCC = 30V IC = 100 IB1 = –100 IB2 0.3 1.0 3 Collector current IC (A) 10 Transient Thermal Resistance Thermal resistance θj-c (°C/W) 10 1 s to 1,000 s 3 1 ms to 1 s 1.0 0.3 TC = 25°C 0.1 0.03 0.01 1 10 100 1,000 (s) 1 10 100 1,000 (ms) Time t 4 2SD1605 When using this document, keep the following in mind: 1. 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