2SB1103, 2SB1104 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1603, 2SD1604 Outline TO-220AB 2 1 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 ID 4.0 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25qC) Ratings Item Symbol 2SB1103 2SB1104 Unit Collector to emitter voltage VCBO –60 –80 V Collector to emitter voltage VCEO –60 –80 V Emitter to base voltage VEBO –7 –7 V Collector current IC –8 –8 A Collector peak current IC(peak) –12 –12 A 40 40 W 150 150 qC –55 to +150 –55 to +150 qC 8 8 A 1 Collector power dissipation PC* Junction temperature Tj Storage temperature Tstg C to E diode forward current Note: 1. Value at TC = 25qC. ID * 1 2SB1103, 2SB1104 Electrical Characteristics (Ta = 25qC) 2SB1103 2SB1104 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V(BR)CEO –60 — — –80 — — V IC = –25 mA, RBE = f Emitter to base breakdown voltage V(BR)EBO –7 — — –7 — — V IE = –50 mA, IC = 0 Collector cutoff current ICBO — — –100 — — –100 PA VCB = –60 V, IE = 0 ICEO — — –10 — — –10 PA VCE = –50 V, RBE = f DC current tarnsfer ratio hFE 1000 — 20000 1000 — 20000 Collector to emitter saturation voltage VCE(sat)1 — — –1.5 — — –1.5 VCE(sat)2 — — –3.0 — — –3.0 VBE(sat)1 — — –2.0 — — –2.0 VBE(sat)2 — — –3.5 — — –3.5 C to E diode forward voltage VD — — 3.0 — — 3.0 V ID = 8 A* Turn on time ton — 0.5 — — 0.5 — Ps IC = –4 A, Storage time tstg — 3.0 — — 3.0 — Fall time tf — 1.0 — — 1.0 — Base to emitter saturation voltage IC = –4 A, IB = –8 1 mA* IC = –8 A, IB = –80 1 mA* V IC = –4 A, IB = –8 1 mA* IC = –8 A, IB = –80 1 mA* Maximum Collector Dissipation Curve Area of Safe Operation 150 –0.1 –0.03 –3 Ta = 25°C 1 Shot Pulse 2S B1103 Collector current IC (A) 50 100 Case temperature TC (°C) –0.3 s ) 1m °C s 25 m = 10 = (T C on ati er Op 0 –1.0 PW 20 –3 1 µs 100 µs DC Collector power dissipation PC (W) iC(peak) –10 IC(max) 40 1 IB1 = –IB2 = –8 mA 1. Pulse Test. 60 2 V 2S B1104 Note: VCE = –3 V, IC = –4 1 A* –10 –30 –100 –300 Collector to emitter voltage VCE (V) 2SB1103, 2SB1104 DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics –10 30,000 PC = 40 W .0 –3 –8 DC current transfer ratio hFE Collector current IC (A) –2.5 –1.5 –2.0 –1.0 –6 –4 –0.5 mA –2 TC = 25°C 10,000 VCE = –3 V Pluse 30 –0.1 –5 –1.0 –0.3 –3 Collector current IC (A) –10 Switching Time vs. Collector Current 10 500 200 500 VCE(sat) IC/IB = 200 –0.03 1.0 tf 0.3 ton 0.1 0.03 Ta = 25°C Pulse –0.3 –1.0 –3 Collector current IC (A) tstg 3 Switching time t (µs) VBE(sat) –0.1 –0.01 –0.1 °C 100 –1.0 –0.3 =7 300 –10 –3 Ta –25 Saturation Voltage vs. Collector Current Ta = 25°C VCC = –30V IC = 100 IB1 = –100 IB2 0.01 –0.1 –10 –3 –0.3 –1.0 Collector current IC (A) –10 Transient Thermal Resistance 10 Thermal resistance θj-c (°C/W) Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) –1 –3 –4 –2 Collector to emitter voltage VCE (V) 25 1,000 IB = 0 0 5°C 3,000 1 s–1,000 s 3 1 ms–1 s 1.0 0.3 TC = 25°C 0.1 0.03 0.01 1 10 100 1,000 (s) 1 10 100 1,000 (ms) Time t 3 2SB1103, 2SB1104 Notice When using this document, keep the following in mind: 1. 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