HITACHI 2SD756A

2SD755, 2SD756, 2SD756A
Silicon NPN Epitaxial
Application
• Low frequency high voltage amplifier
• Complementary pair with 2SB715, 2SB716 and 2SB716A
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SD755, 2SD756, 2SD756A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SD755
2SD756
2SD756A
Unit
Collector to base voltage
VCBO
100
120
140
V
Collector to emitter voltage
VCEO
100
120
140
V
Emitter to base voltage
VEBO
5
5
5
V
Collector current
IC
50
50
50
mA
Collector power dissipation
PC
750
750
750
mW
Junction temperature
Tj
150
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SD755
2SD756
2SD756A
Item
Symbol Min
Typ
Max
Min
Typ Max
Min
Typ Max
Unit Test conditions
Collector to emitter
breakdown voltage
V(BR)CEO 100
—
—
120
—
—
140
—
—
V
IC = 1 mA,
RBE = ∞
Collector to base
breakdown voltage
V(BR)CBO 100
—
—
120
—
—
140
—
—
V
IC = 10 µA, IE = 0
Collector cutoff current
ICBO
—
—
0.5
—
—
0.5
—
—
0.5
µA
VCB = 100 V, I E = 0
250
—
1200 250
—
800
250
—
500
VCE = 12 V,
IC = 2 mA
hFE2
125
—
—
125
—
—
125
—
—
VCE = 12 V,
IC = 10 mA
Base to emitter voltage
VBE
—
—
0.75
—
0.75
—
—
0.75
V
VCE = 12 V,
IC = 2 mA
Collector to emitter
saturation voltage
VCE(sat)
—
—
0.2
—
—
0.2
—
—
0.2
V
IC = 10 mA,
IB = 1 mA
Gain bandwidth product fT
—
350
—
—
350
—
—
350
—
MHz VCE = 12 V,
IC = 5 mA
Collector output
capacitance
—
1.6
—
—
1.6
—
—
1.6
—
pF
DC current transfer ratio hFE1*
Note:
1
Cob
1. The 2SD755, 2SD756 and 2SD756A are grouped by hFE1 as follows.
D
E
F
2SD755
250 to 500
400 to 800
600 to 1200
2SD756
250 to 500
400 to 800
—
2SD756A
250 to 500
—
—
2
VCB = 25 V, IE = 0,
f = 1 MHz
2SD755, 2SD756, 2SD756A
Typical Output Characteristics
10
750
10 µA
Collector Current IC (mA)
Collector Power Dissipation Pc (mW)
Maximum Collector Dissipation Curve
500
250
8
8
6
6
4
4
2
2
IB = 0
0
0
50
100
150
Ambient Temperature Ta (°C)
10
20
30
40
50
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
3
1.0
1,200
VCE = 12 V
VCE = 12 V
Ta = 100°C 75 50 25 0
–25
0.3
0.1
0.03
0.01
0.2
0.3 0.4 0.5 0.6 0.7 0.8
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio hFE
Collector Current IC (mA)
10
1,000
Ta =
800
100°C
75
50
25
600
0
–25
400
200
0
0.01
0.03
0.1
0.3
1.0
3
Collector Current IC (mA)
10
30
3
Gain Bandwidth Product fT (MHz)
2SD755, 2SD756, 2SD756A
Gain Bandwidth Product vs.
Collector Current
1,000
300
100
VCE = 12 V
30
10
0.01 0.03
0.1
0.3
1.0
3
Collector Current IC (mA)
100
f = 1 MHz
IE = 0
20
10
5
2
1.0
IC (max) (DC Operation)
Pc
50
=
75
0
m
W
20
Ta = 25°C
(50 V, 15 mA)
10
5
(100 V, 6 mA)
(120 V, 5 mA)
2
(140 V, 4 mA)
2SD755
2SD756
2SD756A
1
0.5
1
4
30
Area of Safe Operation
50
Collector Current IC (mA)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
10
3
10
30
100
Collector to Base Voltage VCB (V)
5
10
20
50 100 200
500
Collector to Emitter Voltage VCE (V)
Unit: mm
4.8 ± 0.3
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.5 ± 0.1
10.1 Min
2.3 Max
8.0 ± 0.5
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
—
Conforms
0.35 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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