HITACHI 2SK3349

2SK3349
Silicon N Channel MOS FET
High Speed Switching
ADE-208-804 (Z)
1st.Edition.
June 1999
Features
• Low on-resistance
R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA)
R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 mA)
• 2.5 V gate drive device
• Small package (SMPAK)
Outline
SMPAK
3
1
2
D
1. Source
2. Gate
3. Drain
G
S
2SK3349
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
50
mA
200
mA
50
mA
100
mW
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note 2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x20x0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
20
—
—
V
I D = 100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±10
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±5
µA
VGS = ±8 V, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
1
µA
VDS = 20 V, VGS = 0
Gate to source cutoff voltage VGS(off)
0.8
—
1.8
V
I D = 10 µA, VDS = 5 V
Static drain to source on state RDS(on)
—
2.8
3.6
Ω
ID = 25 mA,VGS = 4 V Note 3
resistance
RDS(on)
—
4.8
7.2
Ω
ID = 10 mA,VGS = 2.5 V Note 3
Forward transfer admittance
|yfs|
56
85
—
mS
ID = 25 mA, VDS = 10 V Note 3
Input capacitance
Ciss
—
6
—
pF
VDS = 10 V
Output capacitance
Coss
—
7
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
1.2
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
120
—
ns
I D = 25 mA, VGS = 4 V
Rise time
tr
—
450
—
ns
RL = 400 Ω
Turn-off delay time
t d(off)
—
480
—
ns
Fall time
tf
—
500
—
ns
Note:
2
3. Pulse test
4. Marking is DN
2SK3349
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
5
I D (A)
150
Drain Current
Channel Dissipation
*Pch (mW)
200
100
50
2
1.0
0.2
0.1
50
100
Ambient Temperature
150
200
0.02
0.01
0.005
PW
Op
er
Operation in this area
is limited by RDS(on)
0.0005
0.05 0.1 0.2
=
10
ion (1 s ms
ho
t)
at
I D (A)
Drain Current
0.12
0.08
0.04
VGS = 2V
8
VDS (V)
VDS (V)
V DS = 10 V
Pulse Test
3V
2
4
6
Drain to Source Voltage
50
Typical Transfer Characteristics
0.16
0
10 20
0.2
Pulse Test
4V
5
Value on the alumina ceramic boad.(12.5x20x0.7mm)
Typical Output Characteristics
5V
0.2
0.5 1.0 2
Drain to Source Voltage
Ta ( °C)
*Value on the alumina ceramic boad.(12.5x20x0.7mm)
I D (A)
DC
0.05
0.002
0.001
0
Drain Current
10 µs
100 µs
1 ms
0.5
10
0.16
0.12
0.08
25 °C
0.04
0
75 °C
Tc = –25 °C
1
2
3
Gate to Source Voltage
4
5
VGS (V)
3
Drain to Source Satueation Voltage
vs. Gate to Source Voltage
Pulse Test
0.8
0.6
0.4
10m A
25m A
0.2
0
2
4
6
8
Static Drain to Source on State Resistance
R DS(on) ( )
Gate to Source Voltage
10
Static Drain to Source on State
Resistance vs. Temperature
VGS = 2.5 V
10mA
4
2
10,25,50m A
4V
Pulse Test
0
40
80
Case Temperature
50
Pulse Test
20
2.5 V
10
5
120
Tc
(°C)
VGS = 4V
2
0.5
0.01
VGS (V)
I D = 25m A
0
–40
4
10
8
6
Static Drain to Source on State
Resistance vs. Drain Current
1.0
I D = 50mA
160
Forward Transfer Admittance |yfs| (mS)
Drain to Source Saturation Voltage
V DS(on) (V)
1.0
Static Drain to Source on State Resistance
R DS(on) ( )
2SK3349
0.02
Drain Current
0.05
I D (A)
0.1
Forward Transfer Admittance
vs. Drain Current
0.5
0.2
V DS = 10 V
Pulse Teat
Tc = –25 °C
0.1
25 °C
75 °C
0.05
0.02
0.01
0.005
0.001
0.002
0.005
Drain Current I D (A)
0.1
2SK3349
Typical Capacitance
vs. Drain to Source Voltage
Capacitance C (pF)
Ciss
Switching Characteristics
10000
Coss
Switching Time t (ns)
10
Crss
1.0
VGS = 0
f = 1 MHz
0.1
0
4
8
12
16
Drain to Source Voltage VDS
20
(V)
tr
1000
tf
t d(off)
t d(on)
100
10
0.01
VGS = 2.5 V, VDD = 10 V
PW = 5 µs, duty < 1 %
0.02
Drain Current
0.05
I D (A)
0.1
Reverse Drain Current
vs. Source to Drain Voltage
Reverse Drain Current I DR (A)
0.2
10 V
0.16
0.12
V GS = 0,-5V
5V
0.08
0.04
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
VSD
2.0
(V)
5
2SK3349
Switching Time Test Circuit
Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50
V DD
= 10 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
2SK3349
Package Dimensions
Unit: mm
+ 0.1
0.15 – 0.05
+ 0.1
– 0.1
+ 0.2
– 0.2
1.6
0.4
+ 0.1
– 0.05
0.8
0.3
0 ~ 0.1
+ 0.1
0.5
0.5
0.1
0.2 +– 0.0.5
0.7 – 0.1
+ 0.1
0.15
+ 0.1
1.0 – 0.1
+ 0.2
.1.6 – 0.2
0.4
0.2– 0.05
Hitachi Code
EIAJ
JEDEC
SMPAK
–
–
7
2SK3349
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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