HITACHI HAF2001

HAF2001
Silicon N Channel MOS FET Series
Power Switching
ADE-208-353 D (Z)
5th. Edition
October 1997
Features
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
operation to shut–down the gate voltage in case of high junction temperature like applying over power
consumption, over current etc.
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
TO–220AB
4
D
Gate resistor
G
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
1
2
S
3
1. Gate
2. Drain
3. Source
4. Drain
HAF2001
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
16
V
Gate to source voltage
VGSS
–2.8
V
Drain current
ID
20
A
40
A
20
A
50
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
Item
Symbol
Min
Typ
Max
Unit
Input voltage
VIH
3.5
—
—
V
VIL
—
—
1.2
V
Input current
I IH1
—
—
100
µA
Vi = 8V, VDS = 0
(Gate non shut down)
I IH2
—
—
50
µA
Vi = 3.5V, VDS = 0
I IL
—
—
1
µA
Vi = 1.2V, VDS = 0
Input current
I IH(sd)1
—
0.8
—
mA
Vi = 8V, VDS = 0
(Gate shut down)
I IH(sd)2
—
0.35
—
mA
Vi = 3.5V, VDS = 0
Shut down temperature
Tsd
—
175
—
°C
Channel temperature
Gate operation voltage
VOP
3.5
—
13
V
2
Test Conditions
HAF2001
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain current
I D1
10
—
—
A
VGS = 3.5V, VDS = 2V
Drain current
I D2
—
—
10
mA
VGS = 1.2V, VDS = 2V
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
16
—
—
V
I G = 100µA, VDS = 0
Gate to source breakdown
voltage
V(BR)GSS
–2.8
—
—
V
I G = –100µA, VDS = 0
Gate to source leak current
I GSS1
—
—
100
µA
VGS = 8V, VDS = 0
I GSS2
—
—
50
µA
VGS = 3.5V, VDS = 0
I GSS3
—
—
1
µA
VGS = 1.2V, VDS = 0
I GSS4
—
—
–100
µA
VGS = –2.4V, VDS = 0
I GS(op)1
—
0.8
—
mA
VGS = 8V, VDS = 0
I GS(op)2
—
0.35
—
mA
VGS = 3.5V, VDS = 0
I DSS
—
—
250
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage VGS(off)
1.0
—
2.25
V
I D = 1mA, VDS = 10V
Static drain to source on state RDS(on)
resistance
—
50
65
mΩ
I D = 10A, VGS = 4V Note3
Static drain to source on state RDS(on)
resistance
—
30
43
mΩ
I D = 10A, VGS = 10V Note3
Forward transfer admittance
|yfs|
6
12
—
S
I D = 10A, VDS = 10V Note3
Output capacitance
Coss
—
630
—
pF
VDS = 10V , VGS = 0
Input current (shut down)
Zero gate voltege drain
current
f = 1 MHz
Turn-on delay time
t d(on)
—
7.5
—
µs
I D = 5A, VGS = 5V
Rise time
tr
—
29
—
µs
RL = 6Ω
Turn-off delay time
t d(off)
—
34
—
µs
Fall time
tf
—
26
—
µs
Body–drain diode forward
VDF
—
1.0
—
V
I F = 20A, VGS = 0
t rr
—
110
—
ns
I F = 20A, VGS = 0
voltage
Body–drain diode reverse
recovery time
diF/ dt =50A/µs
Over load shut down
operation time
Note:
Note4
t os1
—
1.8
—
ms
VGS = 5V, VDD = 12V
t os2
—
0.7
—
ms
VGS = 5V, VDD = 24V
3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load
condition.
3
HAF2001
Main Characteristics
Power vs. Temperature Derating
500
Drain Current I D (A)
Channel Dissipation Pch (W)
80
60
40
20
Thermal shut down
200 Operation area
100
100
150
Case Temperature
Tc (°C)
=
tio
10
n(
ms
Tc
2 Operation in this area
is limited by R DS(on)
=
25
°C
)
Ta = 25 °C
0.5
1
2
5
10
20
V
50 100
(V)
DS
Typical Transfer Characteristics
10 V
Pulse Test
6V
Drain Current I D (A)
Drain Current I D (A)
4
s
s
Drain to Source Voltage
5V
30
4V
20
3.5 V
10
VGS = 3 V
0
era
0µ
1m
50
8V
40
PW
Op
5
Typical Output Characteristics
50
DC
10
0.3
200
10
20
0.5
50
20 µs
50
1
0
Maximum Safe Operation Area
2
4
6
Drain to Source Voltage V
8
DS(V)
10
40
30
V DS = 10 V
Pulse Test
Tc = –25 °C
25 °C
75 °C
20
10
0
1
2
3
Gate to Source Voltage V
4
(V)
GS
5
HAF2001
Pulse Test
1.6
1.2
I D = 20 A
0.8
10 A
0.4
5A
0
Static Drain to Source on State Resistance
R DS(on) ( W)
Drain to Source On State Resistance
R DS(on) ( W)
2.0
2
4
6
Gate to Source Voltage
8
0.06
0.02
0
–40
10 A
5A
V GS = 4 V
I D = 20 A
V GS = 10 V
Pulse Test
0.2
0.1
V GS = 4 V
0.05
V GS = 10 V
0.02
0.01
1
2
V GS (V)
I D = 20 A
0.04
0.5
10
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
Static Drain to Source State Resistance
vs. Drain Current
5 A, 10 A
0
40
80
120
160
Case Temperature Tc (°C)
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
V DS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
5 10 20
50 100 200
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
V DS = 10 V
Pulse Test
50
20
Tc = –25 °C
10
25 °C
5
75 °C
2
1
0.5
1
2
5
10
20
50
Drain Current I D (A)
5
HAF2001
Body–Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
V GS = 0, Ta = 25 °C
500
t d(off)
50
Switching Time t (µs)
Reverse Recovery Time trr (ns)
Switching Characteristics
100
1000
200
100
50
20
tf
20
tr
10
t d(on)
5
2
10
0.5
V GS = 5 V, V DD = 30 V
PW = 300 µs, duty < 1 %
1
0.1 0.2
1
2
5
10 20
50
Reverse Drain Current I DR (A)
Reverse Drain Current vs.
Souece to Drain Voltage
10000
Pulse Test
Capacitance Coss (pF)
Reverse Drain Current I DR (A)
50
Typical Capacitance vs.
Drain to Source Voltage
50
40
30
VGS = 5 V
0V
20
10
0
1000
Coss
100
VGS = 0
f = 1 MHz
10
0.4
0.8
1.2
Source to Drain Voltage
6
0.5 1 2
5 10 20
Drain Current I D (A)
1.6
2.0
V SD (V)
0
10
20
30
40
50
Drain to Source Voltage V DS (V)
HAF2001
Gate to Source Voltage vs.
Shutdown Time of Load–Short Test
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage
V GS (V)
10
V DD= 36 V
8
24 V
12 V
6
9V
4
2
0
0.1 0.2
0.5
1
2
5
10 20
50 100
200
I D= 5 A
180
160
140
120
100
0
2
4
6
Gate to Source Voltage
Shutdown Time of Load–Short Test
Pw (mS)
Test Circuit
8
10
V GS (V)
RL
TTL Drive Characteristics
10
1.0
VCC
=5V
8
0.8
6
0.6
VI
4
0.4
II
2
0.2
Input Current I I (mA)
Input Voltage V I (V)
ID=5A
+
II
–
Rg
D•U•T
HD74LS08 V I
ID
5A
0
VI
0
0
0.01 0.03
0
0.1
0.3
1
3
Gate Series Resistance R G (k W)
10
II
0
Thermal shut down
7
HAF2001
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
g s (t)
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
q ch – c(t) = g s (t) • q ch – c
q ch – c = 2.50 °C/W, Tc = 25 °C
0.05
0.1
2
0.0
.01
0.03
0
PDM
e
D=
uls
p
ot
PW
h
1s
0.01
10 µ
PW
T
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
VGS Monitor
90%
D.U.T.
RL
VGS
VGS
5V
50W
V DD
= 30 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
HAF2001
Package Dimensions
Unit: mm
9.5
+ 0.1
4.44±0.2
f 3.6 – 0.08
8.0
1.26±0.15
18.5 ±0.5
15.0 ±0.3
6.4 – 0.1
+ 0.2
2.79 ±0.2
1.27
10.16±0.2
1.27±0.1
1.5 max
7.8 ±0.5
0.76 ±0.1
2.54 ±0.5
2.54 ±0.5
14.0 ±0.5
1.2±0.1
0.5±0.1
2.7 max
Hitachi Code
EIAJ
JEDEC
TO–220AB
SC–46
—
9
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