HMC441LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC441LP3 is a medium PA for: Gain: 14 dB • Point-to-Point Radios Saturated Power: +20 dBm @ 20% PAE • Point-to-Multi-Point Radios • VSAT Single Supply Voltage: +5.0 V w/ Optional Gate Bias • LO Driver for HMC Mixers 50 Ohm Matched Input/Output • Military EW & ECM 3 x 3 x 1 mm QFN SMT Package Functional Diagram General Description The HMC441LP3 is a broadband GaAs PHEMT MMIC Medium Power Amplifier which operates between 6.5 and 13.5 GHz. The leadless plastic QFN surface mount packaged amplifier provides 14 dB of gain, +20 dBm saturated power at 20% PAE from a +5.0 V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. This 50 Ohm matched amplifier does not require any external components making it an ideal linear gain block or driver for HMC SMT mixers. Vgg1, Vgg2: Optional Gate Bias Electrical Specifications, TA = +25° C, Vdd = 5V, Vgg1 = Vgg2 = Open Parameter Min. Frequency Range Gain Max. Min. 6.5 - 8.0 10 Gain Variation Over Temperature Max. Min. 8.0 - 11.0 13 0.02 Typ. 12 0.025 14 0.02 10 0.025 Typ. Max. Units 11.0 - 13.5 GHz 13 dB 0.02 0.025 dB/ °C Input Return Loss 12 15 14 dB Output Return Loss 12 15 13 dB 17 dBm 19.5 dBm 29 dBm Output Power for 1 dB Compression (P1dB) 13 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 8 - 204 Typ. 16 15 18.5 23 26 18 14 20 26 29 26 Noise Figure 5.0 4.5 4.75 dB Supply Current (Idd) 80 80 80 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC441LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz 20 15 18 10 16 14 5 S21 0 S11 S22 -5 -10 12 10 8 6 -15 4 -20 2 -25 0 5 6 7 8 9 10 11 12 13 14 15 16 +25 C +85 C -40 C 6 7 8 FREQUENCY (GHz) Input Return Loss vs. Temperature 10 11 12 13 14 Output Return Loss vs. Temperature 0 0 +25 C -5 -5 +85 C -40 C RETURN LOSS (dB) RETURN LOSS (dB) 9 FREQUENCY (GHz) AMPLIFIERS - SMT 20 4 -10 -15 -20 +25 C +85 C -40 C -10 -15 -20 -25 -25 6 7 8 9 10 11 12 13 14 6 7 8 FREQUENCY (GHz) 9 10 11 12 13 14 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 24 24 22 22 20 20 18 18 16 16 Psat (dB) P1dB (dB) 8 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 14 12 10 +25 C +85 C -40 C 6 12 10 +25 C 8 14 4 8 +85 C 6 -40 C 4 6 7 8 9 10 11 FREQUENCY (GHz) 12 13 14 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 205 HMC441LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Output IP3 vs. Temperature 22 36 20 34 18 32 16 30 14 OIP3 (dBm) Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 10 GHz 12 10 8 28 26 24 22 6 +25 C Pout 4 20 Gain PAE 2 0 -10 +85 C -40 C 18 16 -8 -6 -4 -2 0 2 4 6 8 6 10 7 8 10 11 12 13 14 Gain, Power & Idd vs. Gate Voltage @ 10 GHz Gain, Power & OIP3 vs. Supply Voltage @ 10 GHz 32 210 35 28 26 Gain P1dB Psat OIP3 24 22 20 18 16 14 12 10 Gain P1dB Psat 30 Idd 180 25 150 20 120 15 90 10 60 5 30 0 0 3 3.5 4 4.5 5 5.5 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 Vgg1, Vgg2 Gate Volltage (Vdc) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 10 0 9 +25 C 8 ISOLATION (dB) 7 +25 C -10 +85 C -40 C 6 5 4 3 2 +85 C -40 C -20 -30 -40 1 0 -50 6 7 8 9 10 11 FREQUENCY (GHz) 8 - 206 12 13 14 6 7 8 9 10 11 12 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 13 14 Idd (mA) GAIN (dB), P1dB (dBm), Psat (dBm) 30 Vdd Supply Voltage (Vdc) NOISE FIGURE (dB) 9 FREQUENCY (GHz) INPUT POWER (dBm) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 8 MICROWAVE CORPORATION HMC441LP3 v01.0604 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Drain Bias Voltage (Vdd) +6.0 Vdc Gate Bias Voltage (Vgg1,Vgg2) Typical Supply Current vs. Vdd Vdd (V) Idd (mA) -8.0 to 0 Vdc +5.5 81 RF Input Power (RFin)(Vdd = +5.0 Vdc) +20 dBm +5.0 80 Channel Temperature 150 °C +4.5 79 Continuous Pdiss (T = 85 °C) (derate 10 mW/°C above 85 °C) 0.65 W +3.3 72 +3.0 71 Thermal Resistance (channel to ground paddle) 100 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Note: Amplifier will operate over full voltage range shown above Outline Drawing 8 AMPLIFIERS - SMT Absolute Maximum Ratings NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 207 MICROWAVE CORPORATION HMC441LP3 v01.0604 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz AMPLIFIERS - SMT 8 8 - 208 Pin Descriptions Pin Number Function Description 1, 3-5, 8-10, 12-14, 16 N/C This pin may be connected to RF/DC ground. 2 RF IN This pin is AC coupled and matched to 50 Ohms from 6.5 - 13.5 GHz. 6, 7 Vgg1, Vgg2 Optional gate control for amplifier. If left open, the amplifier will run at standard current. Negative voltage applied will reduce current. 11 RF OUT This pin is AC coupled and matched to 50 Ohms from 6.5 -13.5 GHz. 15 Vdd Power Supply Voltage for the amplifier. An external bypass capacitor of 100 pF is required. GND Package bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0604 HMC441LP3 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1 - J2 PC Mount SMA Connector J3 - J7 DC Pin C1 4.7 µF Capacitor, Tantalum C2 - C4 100 pF Capacitor, 0402 Pkg. U1 HMC441LP3 Amplifier PCB* 106639 Evaluation PCB, 10 mils The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 209