PRELIMINARY 16Mbit CMOS SRAM ELECTRONICS 3DS16-325 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating FEATURES DESCRIPTION Fast Access Time : 15 or 20ns Single 5.0 ± 0.5V Power Supply Power Dissipation - Standby 80mA - Operating 540mA (Max.) TTL Compatible Inputs and Outputs Fully Static Operation - No clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration Die Control : CS0#, CS1 #, CS2 # and CS3 # chip select The 3DS16-325 is a 16,777,216 - bit high-speed Static Random Access Memory organized as 4 banks of 262,144 words of 16 bits. Two banks can operate silmultaneously, giving 32 bit processing. The 3DS16-325 uses 32 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows lower and upper byte access by data control (UB#, LB#). The device is manufactured using 3D PLUS well known MCM-V patended technology designed for high-speed circuit applications. It is particularly well suited for use in high-density high-speed system applications. The 3DS16-325 is packaged in a 64-pin PQFP . PIN CONFIGURATION PIN DESCRIPTION 3DS16-325S ( TOP VIEW ) CS2# CS1# CS3# I/O17 I/O18 I/O19 I/O29 I/O30 I/O31 I/O32 64 55 1 54 PQFP64 22 23 33 32 Address Inputs WE# Write Enable CS0#, CS1# CS2#, CS3# A17 A16 A15 OE# UB# LB# I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 NC A14 A13 A12 A11 A10 I/O24 I/O23 I/O22 I/O21 I/O20 I/O28 I/O27 I/O26 I/O25 NC Ao A1 A2 A3 A4 CSO# I/O1 I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE# A5 A6 A7 A8 A9 A0-A17 OE# Output Enable LB# Lower - Byte Control UB# Upper - Byte Control I/O1 - I/O32 Data Inputs / Outputs Vcc 5.0 V Power Vss Ground NC No Connection BLOCK DIAGRAM AO-17 WE # OE# UB # LB # CSO # I/O1-16 CS2 # CS1 # I/O17-32 CS3 # 3D PLUS, 641 rue Hélène Boucher - ZI F-78532 BUC Cedex FRANCE Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89 Web : http://www. 3d-plus.com Chip Selects AO-17 WE # OE # UB # LB # CS # I/O 256k x 16 BIts AO-17 WE# OE# UB# LB # CS # I/O 256k x 16 BIts AO-17 WE# OE# UB# LB # CS # I/O 256k x 16 BIts AO-17 WE# OE# UB# LB # CS # I/O 256k x 16 BIts 3DFP-0012 Rev : 2 January 2000 Page 1/3 PRELIMINARY 16Mbit CMOS SRAM ELECTRONICS 3SD16-325 ABSOLUTE MAXIMUM RATINGS TRUTH TABLE Parameter Symbol Voltage on Any Pin Relative to Vss Rating Unit CS# WE# OE# I/O Pin Supply Current Not Selected X X X High-Z Standby Not Selected H X X High-Z Standby DOUT Disable L H H High-Z Active MODE VIN. VOUT -0.5 to +7.0 V Voltage on Vcc Supply Relative to Vss Vcc -0.5 to +7.0 V Power Dissipation PD 2.0 W Storage Temperature TSTG -65 to 150 °C Read L H L DOUT Active Commercial TA 0 to 70 °C Write L L X DIN Active Industrial TA -40 to 85 °C Operating Temperature H = HIGH Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC OUTPUT CHARACTERISTICS Symbol X = Don't Care L = LOW If OE is LOW during Write, tWHZ must be observed before data is presented to the device. RECOMMENDED DC OPERATING CONDITIONS (TA=0 to 70°C) Parameter Conditions Min. VOH HIGH Voltage IOH = -4.0mA 2.4 VOL LOW Voltage Max. Unit 0.4 IOL = 8.0mA Symbol Min Typ Max Unit Supply Voltage VCC 4.5 5.0 5.5 V Ground VSS 0 0 0 V Input High Voltage VIH 2.2 - VCC +0.5 V Input Low Voltage VCC -0.5 - 0.8 V Parameter V V NOTE: The above parameters are also guaranteed at industrial temperature range. CAPACITANCE*(TA = 25°C, f = 1.0MHZ) Item Symbol Test Conditions Min Max Unit Symbol Parameter Val. Input / Output Capacitance CI/O VI/O = 0V - 16 pF TRAC Read Cycle Time 15/20ns Input / Capacitance CIN VIN = 0V - 28 pF TWC Write Cycle Time 15/20ns *NOTE : Capacitance is sampled and not 100% tested. DC AND OPERATING CHARACTERISTICS (TA=0 to 70°C, VCC =5.0 ± 0.5V, unless otherwise specified) Parameter Symbol Test Conditions Min Max Unit Input Leakage Current ILI VIN = VSS to VCC -8 8 µA Output Leakage Current ILO CS# = VIH or OE# = VIH or WE# = VIL -8 8 µA VOUT = VSS to VCC Operating Current Standby Current ICC Min. Cycle, 100% Duty CS = VIL, VIN = VIH or VIL, IOUT = 0mA ISB Min. Cycle, CS# = VIH ISB1 f = 0MHZ, CS# ≥= VCC -0.2V, 15ns 540 20ns 530 mA VIN ≥VCC -0.2V or VIN ≤0.2V Output Low Voltage Level VOL IOL = 8mA Output High Voltage Level VOH IOH = -4mA 2.4 280 mA 80 mA 0.4 V V Note: The above parameters are also guaranteed at industrial temperature range. 3D PLUS, 641 rue Hélène Boucher - ZI F-78532 BUC Cedex FRANCE Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89 Web : http://www. 3d-plus.com 3DFP-0012 Rev : 2 January 2000 Page 2/3 PRELIMINARY 16Mbit CMOS SRAM ELECTRONICS 3DS16-325 MECHANICAL DRAWING D Dimensions (mm) D1 e Typ. E E1 PQFP Min Max A 7.15 7.75 16.20 D 15.80 D1 10.80 11.20 E 27.80 28.20 E1 22.80 23.20 e 0.80 e1 0.30 e1 64 Places A ORDERING INFORMATION Please contact 3D PLUS for more information about the available configurations. 3DS16-325SC-20 PQFP64 3D S 16 - 3DS16-325SI-20 PQFP64 32 5 (S) (C / I) - 3DS16-325SC-15 PQFP64 3DS16-325SI-15 PQFP64 15 ACCESS TIME -15 ns -20 ns C : Commercial temperature range ( 0°C to +70°C) I : Industrial temperature range (- 40°C to +85°C) PACKAGE S : PQFP64 5.0V SUPPLY 32 bits WORD 16 Mbits SRAM 3D PLUS PRODUCT MARKING - Trademark - Part Number - Date Code (ww,yy) 3DS16-325S 5199 - Serial Number on request MAIN SALES OFFICE France 3D PLUS Tel : 33 (0)1 30 83 26 50 Fax : 33 (0)1 39 56 25 89 e-mail : [email protected] DISTRIBUTOR 3D PLUS S.A. reserves the right to change or cancel products or specifications without notice. C 3D PLUS, 1999 3D PLUS, 641 rue Hélène Boucher - ZI F-78532 BUC Cedex FRANCE Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89 Web : http://www. 3d-plus.com 3DFP-0012 Rev : 2 January 2000 Page 3/3