A-POWER AP2318AGEN-HF

AP2318AGEN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
▼ Small Outline Package
▼ Surface Mount Device
S
▼ RoHS Compliant & Halogen-Free
SOT-23
BVDSS
30V
RDS(ON)
1.5Ω
ID
540mA
G
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
S
The SOT-23 package is widely used for commercial-industrial surface mount
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
30
V
+16
V
3
540
mA
3
430
mA
2
A
0.7
W
Continuous Drain Current , VGS @ 4V
Continuous Drain Current , VGS @ 4V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
180
℃/W
1
201105121
AP2318AGEN-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4V, ID=500mA
-
-
1.5
Ω
VGS=2.5V, ID=200mA
-
-
2.5
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.3
-
1.2
V
gfs
Forward Transconductance
VDS=4V, ID=500mA
-
500
-
mS
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+16V, VDS=0V
-
-
+60
uA
Qg
Total Gate Charge
ID=0.5A
-
1
1.6
nC
Qgs
Gate-Source Charge
VDS=15V
-
0.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.3
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
16
-
ns
tr
Rise Time
ID=0.5A
-
55
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
50
-
ns
tf
Fall Time
VGS=5V
-
90
-
ns
Ciss
Input Capacitance
VGS=0V
-
23
37
pF
Coss
Output Capacitance
VDS=15V
-
15
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=500mA, VGS=0V
Max. Units
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 400℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2318AGEN-HF
2.5
1.6
o
T A = 25 C
ID , Drain Current (A)
ID , Drain Current (A)
2.0
1.5
1.0
2.5V
V G =2.0V
0.5
1.2
0.8
2.5V
0.4
0.0
V G =2.0V
0.0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3300
2.0
I D =200mA
I D =500mA
V G =4V
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ)
5.0V
4.5V
4.0V
o
TA=150 C
5.0V
4.5V
4.0V
2300
1.6
1.2
1300
0.8
0.4
300
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
2.0
I D =250uA
1.6
Normalized VGS(th) (V)
IS(A)
1.6
1.2
T j =150 o C
T j =25 o C
0.8
0.4
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2318AGEN-HF
f=1.0MHz
6
40
5
30
4
C (pF)
VGS , Gate to Source Voltage (V)
I D =0.5A
V DS =15V
3
C iss
20
2
C oss
C rss
10
1
0
0
0
0.4
0.8
1.2
1
1.6
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
10
Operation in this
area limited by
RDS(ON)
ID (A)
1
1ms
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
Duty factor=0.5
0.2
0.1
0.1
PDM
t
0.05
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 400℃/W
Single Pulse
DC
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
1.6
V DS =5V
VG
o
ID , Drain Current (A)
T j = -40 C
o
T j =25 C
1.2
QG
T j =150 o C
4.5V
QGS
0.8
QGD
0.4
Charge
Q
0.0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4