August 2002 AO4415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4415 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V ID = -8 A RDS(ON) < 26mΩ (VGS = -20V) RDS(ON) < 35mΩ (VGS = -10V) D SOIC-8 Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±25 V -40 3 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -6.6 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -8 TA=25°C Power Dissipation A Maximum -30 RθJA RθJL Typ 24 54 21 Max 40 75 30 Units °C/W °C/W °C/W AO4415 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) RDS(ON) gFS VSD IS Static Drain-Source On-Resistance Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 VDS=0V, VGS=±25V VDS=VGS ID=-250µA -1.7 VGS=-10V, VDS=-5V VGS=-20V, ID=-8A Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr TJ=125°C VGS=-10V, ID=-8A VGS=-6V, ID=-5A VDS=-5V, ID=-8A Qrr µA -2.8 ±100 -3.5 nA V 21.5 29 28.5 26 35 35 A mΩ mΩ 41 11.5 -0.76 mΩ S -1 -4.2 pF pF VGS=0V, VDS=0V, f=1MHz 151 4 pF Ω VGS=-10V, VDS=-15V, ID=-8A 16.6 3.2 nC nC 5.2 10.5 7.3 15.1 8.6 21 nC ns ns ns ns VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω 10.7 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. V A 893 204 IF=-8A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs Body Diode Reverse Recovery Time V VGS=0V, VDS=-15V, f=1MHz Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Units 40 Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance Max -1 -5 TJ=55°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Typ ns nC AO4415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -10V 25 VDS=-5V -7V 20 -6V 15 15 -ID(A) -ID (A) 20 -5V 10 10 125°C -4.5V 5 5 VGS=-4V 25°C 0 0 0 1 2 3 4 5 2.5 3 60 Normalized On-Resistance VGS=-6V 50 45 RDS(ON) (mΩ) 4 4.5 5 5.5 6 6.5 1.60 55 40 35 VGS=-10V 30 25 20 VGS=-20V 15 ID=-8A VGS=-10V 1.40 VGS=-20V 1.20 1.00 0.80 10 0 5 10 15 20 0 25 25 100 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 90 ID=-8A 80 1.0E+00 1.0E-01 70 125°C 1.0E-02 -IS (A) RDS(ON) (mΩ) 3.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 1.0E-03 50 1.0E-04 40 125°C 25°C 1.0E-05 30 25°C 20 4 8 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-8A 1250 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 250 Crss 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 25 30 30 100µs 0.1s 20 TJ(Max)=150°C TA=25°C 10µs Power (W) -ID (Amps) 15 40 TJ(Max)=150°C, TA=25°C 1ms 10ms 1.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 5 1s 20 10 10s DC 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 ALPHA & OMEGA SO-8 Package Data SEMICONDUCTOR, INC. DIMENSIONS IN MILLIMETERS SYMBOLS A A1 A2 b c D E1 e E h L aaa θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− DIMENSIONS IN INCHES MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 6.20 0.50 1.27 0.10 8° 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° θ NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION LOGO 4 4 1 5 FAYWLC NOTE: LOGO 4415 F A Y W LC RECOMMENDED LAND PATTERN - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE SOP-8 PART NO. CODE PART NO. CODE AO4415 4415 UNIT: mm Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data