ETC US5881EUA

US5881
CMOS Multi-Purpose Switch
Features and Benefits
•
•
•
•
Chopper stabilized amplifier stage
New miniature package / thin, high reliability package
Operation down to 3.5V
CMOS for optimum stability, quality and cost
Applications
•
•
•
•
•
Solid state switch
Limit switch
Current limit
Interrupter
Current sensing
Ordering Information
Part No.
US5881
US5881
Temperature Suffix
Package
Temperature Range
E
SO or UA
-40oC to 85oC Extended
L
SO or UA
-40oC to 150oC Automotive
*Contact factory or sales representative for legacy temperature options
Functional Diagram
V DD
Description
The US5881 is a unipolar Hall effect sensor IC fabricated from mixed signal CMOS technology. It incorporates advanced chopper stabilization techniques to provide accurate and stable magnetic
switch points. There are many applications for this
sensor in addition to those listed above. The design, specifications and performance have been
optimized for applications of solid state switches.
Output
Voltage
Regulator
The output transistor will be switched on (BOP) in
the presence of a sufficiently strong South pole
magnetic field facing the marked side of the package. Similarly, the output will be switched off (BRP)
in the presence of a weaker South field and remain
off with “0” field. The SOT-23 device is reversed
from the UA package. The SOT-23 output transistor will be switched on (BOP) in the presence of a
sufficiently strong North pole magnetic field subjected to the marked face.
Chopper
GND
UA Package
Pin 1 - V D D
Pin 2 - GND
Pin 3 - Output
SO Package
Pin 1 - VD D
Pin 2 - Output
Pin 3 - GND
Note: This is a static-sensitive device; please observe ESD precau tions. Reverse VDD protection is not included. For reverse voltage
protection, a 100Ωresistor in series with VDD is recommended.
US5881 CMOS Multi-Purpose Switch
3901005881 Rev 5.0
24/July/01
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US5881
CMOS Multi-Purpose Switch
US5881 Electrical Specifications
Parameter
Supply Voltage
Symbol Test Conditions
VDD
Operating
Min
3.5
Typ
Max
24
Units
V
Supply Current
IDD
B<BRP
1.5
2.5
4.0
mA
Saturation Voltage
VDS(on)
IOUT = 20 mA, B>BOP
0.4
0.5
V
Output Leakage
IOFF
B<BRP, VOUT = 20V
0.01
5.0
ìA
Output Rise Time
tr
VDD = 12V, RL = 1.1KÙ, CL = 20pf
0.04
ìs
Output Fall Time
tf
VDD = 12V, RL = 1.1KÙ, CL = 20pf
0.18
ìs
US5881 Magnetic Specifications
Parameter
Symbol Test Conditions
Min
Typ
Max
Units
Operating Point3
BOP
15
25
30
mT
Release Point
BRP
9.5
20
-
mT
Hysteresis
Bhys
2.0
4.3
5.5
mT
Notes:
1. 1 mT = 10 Gauss.
2. The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be switched
on (BOP) in the presence of a sufficiently strong North pole magnetic field subjected to the
markedface.
3. At –40ºC, maximum BOP = 35 mT.
Absolute Maximum Ratings
Supply Voltage (Operating), VDD
Supply Current (Fault), IDD
Output Voltage, VOUT
Output Current (Fault), IOUT
Power Dissipation, PD
24V
50mA
24V
50mA
100mW
Operating Temperature Range, T A
-40°C to 150°C
Storage Temperature Range, T S
-65°C to 150°C
Maximum Junction Temp, TJ
175°C
ESD Sensitivity (All Pins)
+/- 4KV
Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function o r design. Melexis does
not assume any liability arising from the use of any product or application of any product or circuit described herein.
US5881 CMOS Multi-Purpose Switch
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24/July/01
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US5881
CMOS Multi-Purpose Switch
Performance Graphs
TypicalMagnetic
MagneticSwitch
SwitchPoints
Points
Typical
versus
versus Supply Voltage
Supply Voltage
Typical Magnetic Switch Points
versus Temperature
5881
35
5881
35
BOP
30
Flux Density (mT)
Flux Density (mT)
30
B OP
25
B RP
25
BRP
20
15
20
10
15
BHYS
5
0
10
0
5
10
20
15
-40
25
0
Supply Voltage (V)
80
120
150
Temperature (ºC)
Output Voltage
Minimum & Maximum Magnetic
Switch Range versus Temperature
versus
Output
Voltage versus Flux Density
Flux Density
5881
35
40
5881
30
BOP Max
24
V DD
25
Output Voltage (V)
Flux Density (mT)
30
20
15
B OP
18
12
6
B RP
10
V out
BRP Min
0
5
-40
0
40
80
120
160
-20
0
10
20
30
40
Flux Density (mT)
Temperature (ºC)
US5881 CMOS Multi-Purpose Switch
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US5881
CMOS Multi-Purpose Switch
Performance Graphs
Typical Saturation Voltage
versus
Temperature
VDD = 12 V, I OUT = 20mA
Typical Supply Current
versus
Supply Voltage
5881
5
5881
500
4
400
VDS(ON)
VDS(ON) (mV)
Supply Current (mA)
TA = -40oC
3
TA = 25 oC
2
300
200
TA = 125oC
1
100
0
0
0
5
10
15
20
25
30
-40
0
120
160
200
Temperature ( C)
Power Dissipation
versus
Temperature
Wave Soldering Parameters
All Devices
All Devices
280
400
260
UA Package
R θJA =206oC/W
Solder Temperature (oC)
Package Power Dissipation (mW)
80
o
Supply Voltage (V)
500
40
300
200
100
240
220
200
SO Package
RθJA =575oC/W
0
-40
0
40
80
120
160
200
0
Temperature ( oC)
US5881 CMOS Multi-Purpose Switch
5
10
15
20
25
30
Time in Wave Solder (Seconds)
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US5881
CMOS Multi-Purpose Switch
Application Comments
Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset
voltage, which, in bipolar devices, is a major source
of temperature sensitive drift. CMOS makes this advanced technique possible.
If reverse supply protection is desired, use a resistor
in series with the VDD pin. The resistor will limit the
supply current (Fault), IDD, to 50 mA. For severe
EMC conditions, use the application circuit below.
The CMOS chip is also much smaller than a bipolar
chip, allowing very sophisticated circuitry to be
placed in less space. The small chip size also contributes to lower physical stress and less power consumption.
Installation
Consider temperature coefficients of Hall IC and
magnetics, as well as air gap life time variations. Observe temperature limits during wave soldering.
Applications Examples
Two Wire Optional Current
Biasing Circuit
Automotive and Severe
Environment Protection Circuit
R1 100Ω
V
D1
Z1
C1
Supply
Voltage
4.7 nF
DD
RL
IIN
RL
1.2K
Iout
IDD
VDD
Hall IC
OUT
C2
4.7nF
Hall
IC
Rb
Vss
The resistors R b and R L can be used to bias the input current, IIN. Refer to
the part specification for limiting values. This circuit will help in getting the
precise ON and OFF currents desired.
B RP = Ioff = (V DD / Rb + I DD )
B OP = Ion = (Ioff + VDD / R L )
US5881 CMOS Multi-Purpose Switch
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US5881
CMOS Multi-Purpose Switch
Physical Characteristics
UA Package Dimensions
45o
Typical
1.60
1.40
2.13
1.87
4.30
3.90
0.84
0.63
UA Hall Plate / Chip Location
0.45
0.41
5o
Typical
2.64
2.34
1.53
1.27
U58 *
945
3.20
2.80
0.48
0.43
45o
Typical
Marked
Surface
1.75
1.55
All Dimensions in millimeters
0.38
Typical
(see note 3)
0.20
0.00
0.41
0.35
1
2
NOTES:
1.) Controlling dimension: mm.
2.) Leads must be free of flash and
plating voids.
3.) Do not bend leads within 1mm of
lead to package interface.
4.) Package dimensions exclude
molding flash.
5.) Tolerance is +/- 0.254 mm unless
otherwise specified.
3
= Supplier (Melexis)
= Series (5880)
Line 2:
1st digit (9)
2nd and 3rd digits(45)
= Year (1999)
= Week of Year
PINOUT:
Pin 1
Pin 2
Pin 3
1.30
1.24
0.50
0.35
0.20
MIN
3
*
1651
1
V DD
GND
Output
0.41
0.35
2.57
2.51
SOT-23 Package Dimensions
(Top View)
3.00
2.60
15.5
14.5
* MARKING:
Line 1:
1st digit (U)
2nd and 3rd digits (58)
1.80
1.50
chip
0.66
0.56
2
2.10
1.70
0.25
0.10
Pin #
3.10
2.70
0.10
0.00
0.90
0.70
NOTES:
1. MARKING:
1st Digit (1)
= Series (1880)
2nd Digit(6)
= Year - 1996
Last Digits (51) = Week of Year
2. PINOUT (See Top View at left):
Pin 1
VDD
Pin 2
Output
Pin 3
GND
3. Controlling dimension: mm.
4. Lead thickness after solder plating will be 0.254
mm maximum.
5. Package dimensions exclude molding flash.
6. The end flash shall not exceed 0.127 mm on each
side of package.
7. Tolerance is +/- 0.254 mm unless otherwise
specified.
SOT-23 Hall Plate /
Chip Location
(Bottom View)
0.95
0.85
1.55
1.45
1.30
1.00
For the latest version of this document,
Go to our website at:
WWW.melexis.com
Or for additional information
Contact Melexis Direct:
Europe and Japan
E-mail: [email protected]
Phone: 011-32-13-670-780
US5881 CMOS Multi-Purpose Switch
USA and rest of the world
E-mail: [email protected]
Phone: (603)-223-2362
3901005881 Rev 5.0
24/July/01
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