ETC US3881LUA

US3881
CMOS Low Voltage Hall Effect Latch
Features and Benefits
•
•
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Chopper stabilized amplifier stage
Optimized for BDC motor applications
New miniature package / thin, high reliability package
Operation down to 2.2V
CMOS for optimum stability, quality, and cost
Applications
•
•
•
•
•
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Solid state switch
Brushless DC motor commutation
Speed sensing
Linear position sensing
Angular position sensing
Current sensing
Ordering Information
Part No.
US3881
US3881
Temperature Suffix
Package
Temperature Range
E
SO or UA
-40oC to 85oC Commercial
L
SO or UA
-40oC to 150oC Automotive
* Contact factory or Sale Representative for legacy temperature options
Functional Diagram
Description
V DD
The US3881 is a bipolar Hall effect sensor IC fabricated from mixed signal CMOS technology. It incorporates advanced chopper stabilization techniques to provide accurate and stable magnetic
switch points. There are many applications for this
sensor in addition to those listed above. The design, specifications, and performance have been
optimized for commutation applications in 5V and
12V brushless DC motors.
Output
Voltage
Regulator
The output transistor will be latched on (BOP) in the
presence of a sufficiently strong South pole magnetic field facing the marked side of the package.
Similarly, the output will be latched off (BRP) in the
presence of a North field.
Chopper
GND
UA Package
Pin 1 - VDD
Pin 2 - GND
Pin 3 - Output
The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be latched
on in the presence of a sufficiently strong North
pole magnetic field subjected to the marked face.
SO Package
Pin 1 - VDD
Pin 2 - Output
Pin 3 - GND
Note: Static sensitive device; please observe ESD precautions. Re verse VDD protection is not included. For reverse voltage protec tion, a 100Ω resistor in series with VDD is recommended.
US3881 CMOS Low Voltage Hall Effect Latch
3901003881 Rev 4.2
7/23/01
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US3881
CMOS Low Voltage Hall Effect Latch
US3881 Electrical Specifications
DC Operating Parameters: TA = 25, VDD = 12VDC (unless otherwise specified).
Parameter
Supply Voltage
Symbol Test Conditions
VDD
Operating
Min
2.2
Typ
Max
18
Units
V
Supply Current
IDD
B<BOP
1.5
2.5
4.0
mA
Saturation Voltage
VDS(on)
IOUT = 20 mA, B>BOP
0.4
0.5
V
Output Leakage
IOFF
B<BRP, VOUT = 18V
0.01
5.0
ìA
Output Rise Time
tr
VDD = 12V, RL = 1.1KÙ, CL = 20pf
0.04
ìs
Output Fall Time
tf
VDD = 12V, RL = 1.1KÙ, CL = 20pf
0.18
ìs
US3881 Magnetic Specifications
DC Operating Parameters: TA = -40 to 150oC, VDD =12 VDC (unless otherwise specified). 1mT=10 Gauss.
Parameter
Symbol Test Conditions
Min
Typ
Max
Units
Operating Point
BOP
1.0
5.0
9.0
mT
Release Point
BRP
-9.0
-5.0
-1.0
mT
Hysteresis
Bhys
5.5
10.0
12.0
mT
Absolute Maximum Ratings
Supply Voltage (Operating), VDD
Supply Current (Fault), IDD
Output Voltage, VOUT
Output Current (Fault), IOUT
Power Dissipation, PD
18V
50mA
18V
50mA
100mW
Operating Temperature Range, T A
-40 to 150°C
Storage Temperature Range, T S
-65 to 150°C
Maximum Junction Temp, TJ
175°C
ESD Sensitivity (All Pins)
+/- 4KV
Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function o r design. Melexis
does not assume any liability arising from the use of any product or application of any product or circuit described herein.
US3881 CMOS Low Voltage Hall Effect Latch
3901003881 Rev 4.2
7/23/01
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US3881
CMOS Low Voltage Hall Effect Latch
Performance Graphs
Typical Magnetic Switch Points
versus
Supply Voltage
Typical Magnetic Switch Points
versus
Temperature
3881
12.5
3881
12.5
B HYS
7.5
7.5
Flux Density (mT)
Flux Density (mT)
B OP
2.5
-2.5
B OP
2.5
-2.5
B RP
B RP
-7.5
-7.5
-12.5
-12.5
0
5
10
15
20
25
30
-40
0
40
Min/Max Magnetic Switch
Range
versus
Temperature
160
200
3881
25
BOP Max
7.5
120
Output Voltage
versus
Flux Density
3881
12.5
80
Temperature (oC)
Supply Voltage (V)
20
B OP
2.5
BOP Min
-2.5
BR P Max
15
B RP
10
5
-7.5
-12.5
-40
Output Voltage (V)
Flux Density (mT)
V DD
BR P Min
V out
0
0
40
80
120
160
200
-30
-10
0
1
0
2
0
30
Flux Density (mT)
Temperature (oC)
US3881 CMOS Low Voltage Hall Effect Latch
-20
3901003881 Rev 4.2
7/23/01
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US3881
CMOS Low Voltage Hall Effect Latch
Performance
PerformanceGraphs
Graphs
Typical Saturation Voltage
versus
Temperature
VDD = 12 V, IOUT = 20mA
Typical Supply Current
versus
Supply Voltage
3881
5
3881
500
400
4
VDS(ON)
V DS(ON) (mV)
Supply Current (mA)
TA = -40oC
3
TA = 25 oC
2
300
200
TA = 125 oC
100
1
0
-40
0
0
5
10
15
20
25
30
0
Power Dissipation
versus
Temperature
120
160
200
All Devices
280
400
260
Solder Temperature (oC)
Package Power Dissipation (mW)
80
Wave Soldering Parameters
All Devices
500
40
Temperature (oC)
Supply Voltage (V)
UAPackage
Rθ J A =206o C/W
300
200
100
240
220
200
SOPackage
Rθ J A =575o C/W
0
-40
0
40
80
120
160
200
0
Temperature (oC)
US3881 CMOS Low Voltage Hall Effect Latch
5
10
15
20
25
30
Time in Wave Solder (Seconds)
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7/23/01
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US3881
CMOS Low Voltage Hall Effect Latch
Applications
Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched
capacitor techniques to eliminate the amplifier
offset voltage, which, in bipolar devices, is a
major source of temperature sensitive drift.
CMOS makes this advanced technique possible. The CMOS chip is also much smaller than
a bipolar chip, allowing very sophisticated circuitry to be placed in less space. The small chip
size also contributes to lower physical stress
and less power consumption.
If reverse supply protection is desired, use a resistor in series with the VDD pin. The resistor will
limit the Supply Current (Fault), IDD, to 50 mA.
For severe EMC conditions, use the application
circuit below.
Installation
Consider temperature coefficients of Hall IC and
magnetics, as well as air gap life time variations. Observe temperature limits during wave
soldering.
Applications Examples
Automotive and Severe
Environment Protection Circuit
Two Wire Optional Current
Biasing Circuit
R1 100 Ω
V
D1
Z1
C1
Supply
Voltage
RL
1.2K
Hall IC
DD
RL
IIN
OUT
4.7nF
Iout
IDD
VDD
C2
4.7nF
Hall IC
Rb
VSS
The resistors Rb and RL can be used to bias the input current, Iin.
Refer to the part specification for limiting values. This circuit will help in
getting the precise ON and OFF currents desired.
B RP = Ioff = (VDD / Rb + IDD )
B OP = Ion = (Ioff + VDD / RL )
US3881 CMOS Low Voltage Hall Effect Latch
3901003881 Rev 4.2
7/23/01
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US3881
CMOS Low Voltage Hall Effect Latch
Physical Characteristics
UA Package Dimensions
45o
Typical
1.60
1.40
2.13
1.87
4.30
3.90
0.84
0.63
UA Hall Plate / Chip Location
0.45
0.41
5o
Typical
2.64
2.34
1.53
1.27
U38 *
104
3.20
2.80
0.48
0.43
45o
Typical
Marked
Surface
1.75
1.55
All Dimensions in millimeters
0.38
Typical
(see note 3)
0.20
0.00
0.41
0.35
1
2
NOTES:
1.) Controlling dimension: mm
2.) Leads must be free of flash and
plating voids
3.) Do not bend leads within 1mm
of the lead to package interface.
4.) Package dimensions exclude
molding flash
5.) Tolerance is 0.254mm unless
otherwise specified
3
= Supplier (Melexis)
= Series (3880)
Line 2:
1st digit (1)
2nd and 3rd digits(04)
= Year (2001)
= Week of Year
PINOUT:
Pin 1
Pin 2
Pin 3
1.30
1.24
0.50
0.35
0.20
MIN
3
*
3104
1
V DD
GND
Output
0.41
0.35
2.57
2.51
SOT-23 Package Dimensions
(Top View)
3.00
2.60
15.5
14.5
* MARKING:
Line 1:
1st digit (U)
2nd and 3rd digits (38)
1.80
1.50
chip
0.66
0.56
2
2.10
1.70
0.25
0.10
Pin #
3.10
2.70
0.10
0.00
0.90
0.70
NOTES:
1. MARKING:
1st Digit (3)
= Series (3881)
2nd Digit(1)
= Year - 2001
Last Digits (04) = Week of Year
2. PINOUT (See Top View at left):
Pin 1
VDD
Pin 2
Output
Pin 3
GND
3. Controlling dimension: mm.
4. Lead thickness after solder plating will be 0.254
mm maximum.
5. Package dimensions exclude molding flash.
6. The end flash shall not exceed 0.127 mm on each
side of package.
7. Tolerance is +/- 0.254 mm unless otherwise
specified.
SOT-23 Hall Plate /
Chip Location
(Bottom View)
0.95
0.85
1.55
1.45
1.30
1.00
For the latest version of this document,
Go to our website at:
WWW.melexis.com
Or for additional information
Contact Melexis Direct:
Europe and Japan
E-mail: [email protected]
Phone: 011-32-13-670-780
US3881 CMOS Low Voltage Hall Effect Latch
USA and rest of the world
E-mail: [email protected]
Phone: (603)-223-2362
3901003881 Rev 4.2
7/23/01
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