OM5N100NK OM6N100NK POWER MOSFETS IN A TO-3 PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFETs In A TO-3 Package FEATURES • • • • • TO-3 Hermetic Package, .060 Dia. Leads Fast Switching Low RDS(on) 1000 Volt, Size 5 Die Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS PART NUMBER OM5N100NK OM6N100NK VDS (V) 1000 1000 RDS(on) ( ) 3.0 2.0 ID (A) 5.0 6.0 3.1 MECHANICAL OUTLINE 1.197 1.177 1.53 REF. 0.875 MAX. 0.135 MAX. SEATING PLANE 4 11 R1 Supersedes 3 12 R0 0.675 0.655 0.188 R. MAX. 0.450 0.250 0.312 MIN. 0.063 2 PLCS. 0.058 2 0.440 0.420 1 0.225 0.205 Pin Connection Pin 1: Gate Pin 2: Source Case: Drain 3.1 - 41 0.161 0.151 0.525 R. MAX. TC = 25° unless otherwise noted Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 1000 V Voltage ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) ID = 250 mA 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 VGS(th) Gate-Threshold Voltage IGSSF 2.0 4.0 V VDS = VGS, ID = 250 mA Gate-Body Leakage Forward 100 nA VGS = 20 V, VDS = 0 IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V, VDS = 0 IDSS Zero Gate Voltage 0.25 mA VDS = Max. Rat., VGS = 0 Drain Current 1.0 mA VDS = 0.8 x Max. Rat., On-State Drain Current 5.0 A RDS(on) Static Drain-Source On-State 3.0 Input Capacitance Coss Output Capacitance Crss A ID @ TC = 100°C Continuous Drain Current 3.1 3.7 A A V PD @ TC = 25°C Maximum Power Dissipation 130 130 W VGS = 10 V, ID = 2.5 A PD @ TC =100°C Maximum Power Dissipation 51 51 W Junction-To-Case Linear Derating Factor 1.00 1.00 W/°C Junction-To-Ambient Linear Derating Factor .033 .033 W/°C VDS > ID(on) x RDS(on)Max., 2.0 VGS = 10 V, ID = 3.0 A 4.0 VGS = 10 V, ID = 3.0 A Tstg Storage Temperature Range -55 to 150 -55 to 150 °C TC = 100° C Lead Temperature (1/16" from case for 10secs.) 300 300 °C TJ Operating and 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. VGS = 0 pF VDS = 25 V Reverse Transfer Capacitance 130 pF f = 1 MHz Td(on) Turn-On Delay Time 65 ns VDD = 400 V, ID = 6 A tr Rise Time 55 ns Rg = 7 W , VGS = 10 V td (off) Turn-Off Delay Time 62 ns VDD = 800 V, ID = 6 A, tf Fall Time 25 ns RG = 7 , VBS = 10 V 4.0 THERMAL RESISTANCE (Maximum) at TA = 25°C BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current 6 A (Body Diode) Modified MOSPOWER D symbol showing Source Current2 24 A (Body Diode) Reverse Recovery Time V 6.0 VGS = 10 V pF trr 1000 5.0 24 350 Diode Forward Voltage1 1000 ±20 2800 VSD Drain-Source Voltage (RGS = 20k ) Continuous Drain Current 24 VDS = 25V, ID = 3.5 A ISM VDGR ID @ TC = 25°C ±20 S IS V Gate-Source Voltage DYNAMIC Ciss Units VGS = 10 V, ID = 2.5 A Resistance1 - OM6N100NK Forward Transductance 1000 Pulsed Drain Resistance1 - OM6N100NK gfs 1000 IDM TC = 100° C RDS(on) Static Drain-Source On-State OM5N100NK OM6N100NK 6.0 Resistance1 - OM5N100NK RDS(on) Static Drain-Source On-State Drain-Source Voltage VGS Resistance1 - OM5N100NK RDS(on) Static Drain-Source On-State Parameter VDS Current1 VGS = 0, TC = 125° C ID(on) Symbol VGS = 0, the integral P-N Junction rectifier. 2.5 1100 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area. G S V TC = 25 C, IS = 6 A, VGS = 0 ns IF = IS, VDD = 100V, dlF/ds = 100 A/ms, TJ = 150°C RthJC Junction-To-Case RthJA Junction-to-Ambient Max. 1.0 °C/W 30 °C/W Free Air Operation OM5N100NK - OM6N100NK 3.1 ELECTRICAL CHARACTERISTICS: