2N6782 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 7.75 (0.305) 8.51 (0.335) dia. • FAST SWITCHING • MOTOR CONTROLS 5.08 (0.200) typ. • POWER SUPPLIES 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45˚ TO39 Pin 1 - Source Pin 2 - Gate Pin 3 Drain and Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Drain Source Voltage 100V Drain Gate Voltage (RGS = 1MW) 100V ID @Tcase = 25°C Continuous Drain Current ±3.5V ID @Tcase = 100°C ±2.25A IDM Continuous Drain Current Pulsed Drain Current 1 VGS Gate Source Voltage ±40V PD@ Tcase = 25°C Maximum Power Dissipation 15W PD@ Tcase = 100°C Maximum Power Dissipation 6W Junction to Case Linear Derating Factor 0.12W/°C Junction to ambient Linear Derating Factor 0.005W/°C TJ,Tstg Operating and Storage Temperature Range Lead Temperature (1/16” from case for 10 secs) VDS GR Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk ±8V -55 to +150°C 300°C 6/00 2N6782 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSSF Gate Body Leakage Forward IGSSR Gate Body Leakage Reverse IDSS Zero Gate Voltage Drain Current VGS = 0 ID = 0.25mA VDS = VGS ID = 0.5A 2* 4.0* TA = 125°C 1* 4.0* VGS = 20V 100* V ID = 0.5A 100* TA = 125°C 200* VGS = -20V VDS(on) RDS(on) On State Drain Current1 Static Drain Source On-State Voltage1 Static Drain Source On-State nA -100* VDS = 0.8 Max. Ratings VGS =0 VDS = Max. Ratings VGS =0 0.25* 1* TC = 125°C ID(on) V mA VDS ³ 2VDS(ON) VGS = 10V 3.5 A VGS = 10V ID = 3.5A 2.1* V VGS = 10V ID = 2.25A 0.6* TC = 125°C 1.08* Resistance1 DYNAMIC CHARACTERISTICS W V VDS ³ 2VDS(ON) IDS = 2.25A gfs Forward Transductance 1 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn–On Delay Time VDD = 34V ID = 2.25A 15* tr Rise Time RG = 25W RL = 15W 25* td(off) Turn–Off Delay Time (MOSFET switching times are essentially 25* tf Fall Time independent of operating temperature.) 20* VGS = 0 VDS = 25V f = 1MHz 1.0* 3.0* 60* 200* 40* 100* 10* 25* S (É) pF ns BODY– DRAIN DIODE RATINGS & CHARACTERISTICS Continuous Source Current Body MOdified MOS POWER Diode symbol showing the intergal ISM Source Current1 (Body Diode) P-N junction rectifier. VSD Diode Forward Voltage 1 trr Reverse Recovery Time IS IS = -3.5A , 5 VGS = 0 TC = 25°C IF =IS -3.5* A -8 A -1.5* V / TJ = 150°C di / dt = 100A/ms -0.75* V 200 THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction – Case RqJPC Thermal Resistance Junction – PC Board Free Air Operation 8.33* 170 °C\W Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% * JEDEC registered Values Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 6/00