MWI 35-12 A5 IC25 = 45 A = 1200 V VCES VCE(sat) typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ VGES VGEM Continuous Transient IC25 IC80 ICM Maximum Ratings Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 ● ● 1200 1200 V V ±20 ±30 V V TC = 25°C TC = 80°C TC = 80°C, tP = 1 ms 45 30 60 A A A tSC (SCSOA) VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 39 Ω, non repetitive 10 µs RBSOA VGE = ±15 V, TJ = 125°C, RG = 39 Ω Clamped inductive load, L = 100 µH ICM = 60 VCEK < VCES A Ptot TC = 25°C 200 W 150 °C TJ Tstg VISOL Md 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Insulating material: Al2O3 Mounting torque (M5) ● ● ● ● ● ● ● ● ● ● ● -40 ... +150 °C 4000 4800 V~ V~ 2.0 - 2.5 18 - 22 Nm lb.in. Advantages ● ● ● Typical Applications ● ● ● dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 9 9 50 mm mm m/s2 Weight Typical 80 2.8 g oz. space and weight savings reduced protection circuits package designed for wave soldering AC motor control AC servo and robot drives power supplies Data according to a single IGBT/FRED unless otherwise stated. ©1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842 MWI 35-12 A5 Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC = 1 mA, VCE = VGE ICES VCE = VCES IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 25 A, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 V 4.5 TJ = 25°C TJ = 125°C 6.5 2 2.2 V 1.2 mA mA ±200 nA 2.7 V 1650 pF 250 pF Cres 110 pF td(on) 100 ns 70 ns 500 ns Cies Coes tr td(off) VCE = 25 V, VGE = 0 V, f = 1 MHz Inductive load, TJ = 125°°C IC = 25 A, VGE = ±15 V VCE = 600 V, RG = 39 Ω 70 ns Eon 3.8 mJ Eoff 2.8 mJ 1.2 0.6 K/W K/W tf RthJC RthJS with heatsink compound Reverse Diode (FRED) Characteristic Values min. VF IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 80°C IRM IF = 25 A, VGE = 0 V, -diF/dt = 400 A/µs trr RthJC RthJS Dimensions in mm (1 mm = 0.0394") Equivalent Circuits for Simulation Conduction typ. max. 2.4 1.9 2.6 2.3 V V 50 30 A A 20 A TJ = 125°C, VR = 600 V 200 ns with heatsink compound 2.6 1.3 K/W K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.5 V; R0 = 40.7 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 24.9 mΩ Thermal Response IGBT (typ.) Cth1 = 0.07 J/K; Rth1 = 0.586 K/W Cth2 = 0.18 J/K; Rth2 = 0.014 K/W Free Wheeling Diode (typ.) Cth1 = 0.05 J/K; Rth1 = 1.313 K/W Cth2 = 0.09 J/K; Rth2 = 0.025 K/W ©1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842 MWI 35-12 A5 60 60 VGE=17V TJ = 25°C A 50 15V 13V IC VGE=17V TJ = 125°C 15V A 50 IC 40 13V 40 11V 11V 30 30 20 20 9V 9V 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 60 IC 3.5 V Fig. 2 Typ. output characteristics 80 VCE = 20V TJ = 125°C A70 TJ = 25°C A 50 2.5 3.0 VCE IF 40 60 TJ = 25°C 50 40 30 30 20 20 10 10 0 0 5 6 7 8 9 10 0 11 V 1 2 Fig. 3 Typ. transfer characteristics V 4 Fig. 4 Typ. forward characteristics of free wheeling diode 300 60 20 V VCE = 600V IC 3 VF VGE = 25A A ns IRM VGE 15 trr trr 200 40 10 20 TJ = 125°C VR = 600V IF = 25A IRM 5 100 35-12 0 0 0 0 20 40 60 80 100 120 140 nC QG Fig. 5 Typ. turn on gate charge ©1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 0 200 400 600 800 A/µs -di/dt 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842 MWI 35-12 A5 14 140 6 12 mJ 120 ns mJ 5 Eon 10 100 8 tr 4 Eon 2 VCE = 600V VGE = ±15V 60 RG = 47Ω TJ = 125°C 40 0 0 Eoff Eoff td(off) 400 t 4 10 20 30 40 3 VCE = 600V VGE = ±15V 300 2 RG = 47Ω TJ = 125°C 200 20 1 0 0 50 A 0 0 10 20 30 40 Eon td(on) Eon IC = 35A TJ = 125°C 8 Fig. 8 Typ. turn off energy and switching times versus collector current 5 240 VCE = 600V 50 A IC Fig. 7 Typ. turn on energy and switching times versus collector current mJ V = ±15V GE 10 100 tf IC 12 ns 500 80 td(on) 6 t 600 tr 6 mJ ns 180 1500 VCE = 600V VGE = ±15V IC = 35A TJ = 125°C 4 t Eoff ns td(off) 1200 Eoff t 3 900 2 600 1 300 120 4 60 2 0 0 40 80 120 160 RG 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 40 80 10 A 60 K/W 1 ZthJC RG = 47Ω TJ = 125°C VCEK < VCES 40 30 120 0 200 Ω 240 160 RG Fig.10 Typ. turn off energy and switching times versus gate resistor 70 ICM 50 tf 0 0 200 Ω 240 diode 0.1 IGBT 0.01 20 0.001 10 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA ©1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 single pulse 0.0001 0.00001 0.0001 35-12 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842