DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. (Unit: mm) Embossed Type Taping • Small Package: 4 Pins Mini Mold 0.6 +0.1 –0.05 0.4 +0.1 –0.05 1 • Automatically Mounting: (1.9) • Suitable for use as RF amplifier in FM tuner and VHF TV tuner. 2.9±0.2 • Enhancement Type. (1.8) 0.85 0.95 2 GPS = 23 dB TYP. (f = 200 MHz) 1.5 +0.2 –0.1 V Gate1 to Source Voltage VG1S ±8 Gate2 to Source Voltage VG2S ±8 (±10)*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D 18 V Drain Current ID 25 mA Total Power Dissipation PD 200 mW Channel Temperature Tch 125 °C Storage Temperature Tstg –55 to +125 °C *1 RL ≥ 10 kΩ 5° 1. 2. 3. 4. 0.16 V (±10)*1 +0.1 –0.06 18 5° 0 to 0.1 VDSX 5° 0.8 Drain to Source Voltage 1.1 +0.2 –0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 0.4 +0.1 –0.05 NF2 = 1.0 dB TYP. (f = 55 MHz) • High Power Gain: 2.8 +0.2 –0.3 3 NF1 = 1.2 dB TYP. (f = 200 MHz) 4 • Low Noise Figure: 0.4 +0.1 –0.05 CM = 92 dBµ TYP. @ f = 200 MHz, GR = –30 dB 5° Source Drain Gate 2 Gate 1 PRECAUTION Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. Document No. P10574EJ2V0DS00 (2nd edition) (Previous No. TD-2267) Date Published August 1995 P Printed in Japan © 1989 1993 3SK222 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL Drain to Source Breakdown Voltage BVDSX Drain Current IDSX Gate1 to Source Cutoff Voltage MIN. MAX. 18 UNIT V TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA 0.01 8.0 mA VG1S(off) 0 +1.0 V VDS = 6 V, VG2S = 3 V, ID = 10 µA Gate2 to Source Cutoff Voltage VG2S(off) 0 +1.0 V VDS = 6 V, VG2S = 3 V, ID = 10 µA Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±8 V Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±8 V Forward Transfer Admittance |yfs| 15 19.5 mS VDS = 5 V, VG2S = 4 V, ID = 10 mA f = 1 kHz Input Capacitance Ciss 3.6 4.3 5.0 pF Output Capacitance CDSS 1.0 1.5 2.0 pF VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz Reverse Transfer Capacitance Crss 0.02 0.03 pF Power Gain GPS Noise Figure 1 NF1 1.2 2.0 dB Noise Figure 2 NF2 1.0 2.0 dB 21.0 IDSX Classification Class V21/VBA* V22/VBB* Marking V21 V22 IDSX (mA) 0.01 to 3.0 1.0 to 8.0 * Old specification/New specification 2 TYP. 23.0 dB VDS = 6 V, VG2S = 3 V, VG1S = 0.75 V VDS = 6 V, VG2S = 4 V, ID = 10 mA f = 200 MHz VDS = 6 V, VG2S = 4 V, ID = 10 mA f = 55 MHz 3SK222 TYPICAL CHARACTERISTICS (TA = 25 °C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 400 ID – Drain Current – mA PT – Total Power Dissipation – mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 200 100 0 25 50 75 100 VG2S = 3 V 25 20 VG1S = 1.8 V 15 1.6 V 1.4 V 10 1.2 V 1.0 V 0.8 V 5 0.6 V 125 3 0 3.0 V 20 2.5 V 15 2.0 V 10 5 1.5 V 0 1.0 V 2.5 40 0.5 1.0 1.5 2.0 12 40 VDS = 6 V f = 1 kHz 32 VG2S = 4 V 24 3.0 V 3.5 V 2.0 V 2.5 V 1.5 V 16 8 1.0 V 0.5 0 1.0 1.5 2.0 VG1S – Gate1 to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 7.0 VDS = 6 V f = 1 kHz 24 VG2S = 4 V 16 3.5 V 3.0 V 2.5 V 8 1.0 V 4 1.5 V 8 2.0 V 12 16 15 FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE VG1S – Gate1 to Source Voltage – V 32 0 |yfs| – Forward Transfer Admittance – mS 3.5 V VG2S = 4 V 20 Ciss – Input Capacitance – pF |yfs| – Forward Transfer Admittance – mS ID – Drain Current – mA DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE VDS = 6 V 9 VDS – Drain to Source Voltage – V TA – Ambient Temperature – °C 25 6 6.0 2.5 ID = 10 mA (at VDS = 6 V VG2S = 4 V) f = 1 MHz 5.0 4.0 3.0 ID – Drain Current – mA 2.0 –1.0 0 1.0 2.0 3.0 4.0 VG2S – Gate2 to Source Voltage – V 3 3SK222 OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 1.5 1.0 5 ID = 10 mA 20 (at VVDSG2S= 6= V4 V) f = 200 MHz GPS – Power Gain – dB 2.0 10 ID = 10 mA (at VDS = 6 V VG2S = 4 V) f = 1 MHz NF – Noise Figure – dB COSS – Output Capacitance – pF 2.5 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE GPS 10 0 –10 0.5 NF –20 0 –1.0 0 1.0 2.0 3.0 VG2S – Gate2 to Source Voltage – V 4 4.0 0 –2.0 0 2.0 4.0 6.0 VG2S – Gate2 to Source Voltage – V 8.0 3SK222 NF TEST CIRCUIT AT f = 55 MHz VG2S VDS RFC 2.2 kΩ Ferrite Beads 1 500 pF 1 500 pF 1 000 pF OUTPUT 27 pF INPUT 27 pF 47 kΩ 3.3 kΩ 47 kΩ 3.3 kΩ 50 Ω 50 Ω 1 000 pF VG1S GPS AND NF TEST CIRCUIT AT f = 200 MHz VG2S 1 000 pF 22 kΩ 1 000 pF Ferrite Beads INPUT 7 pF OUTPUT L2 7 pF 1 000 pF L1 50 Ω 15 pF 1 000 pF 50 Ω 1 000 pF 15 pF 22 kΩ L3 1 000 pF VG1S 1 000 pF VDS L1: φ 0.6 mm U.E.W φ 7 mm 3 T L2: φ 0.6 mm U.E.W φ 7 mm 3 T L3: RFC 2.2 µH 5 3SK222 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2