DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS (Unit: mm) The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, 1.78 ±0.2 TVRO and another commercial systems. 0.5 TYP. 1 L FEATURES L NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz • Gate Length : Lg ≤ 0.25 µm • Gate Width : Wg = 200 µm 1.78 ±0.2 • Super Low Noise Figure & High Associated Gain T 4 2 L ORDERING INFORMATION L 3 SUPPLYING FORM NE32484A-SL STICK L = 1.7 mm MIN. Tape & reel L = 1.0 ± 0.2 mm MARKING 0.5 TYP. 1000 pcs./reel NE32484A-T1A T L = 1.0 ± 0.2 mm Tape & reel 5000 pcs./reel 1. 2. 3. 4. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDS 4.0 Gate to Source Voltage VGS –3.0 V V Drain Current ID IDSS mA Gate Current IG 100 µA Total Power Dissipation Ptot 165 mW Channel Temperature Tch 150 ˚C Storage Temperature Tstg –65 to +150 ˚C 0.1 NE32484A-T1 LEAD LENGTH 1.7 MAX. PART NUMBER Source Drain Source Gate RECOMMENDED OPERATING CONDITION (TA = 25 ˚C) CHARACTERISTIC TYP. MAX. Unit VDS 2 3 V Drain Current ID 10 20 mA Input Power Pin 0 dBm Drain to Source Voltage Document No. P11785EJ3V0DS00 (3rd edition) (Previous No. TC-2316) Date Published July 1996 P Printed in Japan SYMBOL MIN. © 1991 NE32484A ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL Gate to Source Leak Current IGSO Saturated Drain Current IDSS Gate to Source Cutoff Voltage VGS(off) Transconductance gm Noise Figure NF Associated Gain MIN. TYP. MAX. UNIT 0.5 10 µA VGS = –3 V 15 40 70 mA VDS = 2 V, VGS = 0 V –0.2 –0.8 –2.0 V VDS = 2 V, ID = 100 µA 45 60 mS VDS = 2 V, ID = 10 mA 0.6 Ga 10.0 0.7 11.0 TEST CONDITIONS dB VDS = 2 V, ID = 10 mA, dB f = 12 GHz TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V 50 200 ID - Drain Current - mA Ptot - Total Power Dissipation - mW 250 150 100 50 0 40 –0.2 V 30 –0.4 V 20 –0.6 V 10 50 100 150 200 0 250 MSG. - Maximum Stable Gain - dB MAG. - Maximum Available Gain - dB |S21s|2 - Forward Insertion Gain - dB ID - Drain Current - mA VDS = 2 V 40 30 20 10 VDS = 2 V ID = 10 mA 20 MSG. 16 |S21S|2 8 4 1 0 2 MAG. = | S21 | K ± K2 − 1 | S12 | 2 ) 4 6 8 10 14 f - Frequency - GHz K= ( MAG. 12 Gain Calculations | S21 | | S12 | 5 24 VGS - Gate to Source Voltage - V MSG. = 4 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 50 –1.0 3 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 0 –2.0 2 1 TA - Ambient Temperature - ˚C 1 + | ∆ |2 − | S11 |2 − | S22 |2 2 | S12 || S21 | ∆ = S11 ⋅ S22 − S21 ⋅ S12 20 30 NE32484A NOISE FIGURE, ASSOCIATED GAIN vs. RATIO OF DRAIN CURRENT TO ZERO-GATE VOLTAGE CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 5 24 3 VDS = 2 V f = 12 GHz VDS = 2 V ID = 10 mA 3 16 2 12 1 2 Ga 10 1 NF 5 8 0 NF 0 Ga - Associated Gain - dB Ga Ga - Associated Gain - dB NF - Noise Figure - dB 20 NF - Noise Figure - dB 15 4 1 2 4 6 8 10 14 20 30 4 1 2 4 6 8 10 20 0 40 60 100 IDS/IDSS - Ratio of Drain Current to Zero-Gate Voltage Current - % f - Frequency - GHz 3 NE32484A S-Parameters VDS = 2 V, ID = 10 mA START 500 MHz, STOP 18 GHz, STEP 500 MHz Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz S11 S12 1.0 +90˚ 0.5 0 0.5 +135˚ 2.0 5 4 3 +45˚ 3 1.0 2.0 ∞ 1 2 ±180˚ 0 4 5 2 –0.5 –2.0 1 –45˚ –135˚ Rmax. = 1 –1.0 S21 S22 +90˚ 1.0 +135˚ Rmax. = 0.25 –90˚ 0.5 +45˚ 2.0 1 2 3 0 ±180˚ 0 0.5 4 5 1.0 2.0 ∞ 3 4 5 2 –45˚ –135˚ –90˚ 4 Rmax. = 5 1 –2.0 –0.5 –1.0 Rmax. = 1 NE32484A S-Parameters MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY MHz S21 S11 MAG. ANG. MAG. (deg.) S12 ANG. MAG. (deg.) S22 ANG. MAG. (deg.) ANG. (deg.) 500 .999 –8.3 4.699 171.5 .009 81.1 .667 –6.2 1 000 .990 –16.6 4.678 162.9 .019 78.1 .663 –12.3 1 500 .976 –24.9 4.611 154.1 .027 73.5 .654 –18.2 2 000 .952 –32.7 4.508 146.0 .035 67.5 .641 –24.2 2 500 .934 –40.5 4.424 138.0 .043 61.4 .626 –29.7 3 000 .908 –48.2 4.328 130.0 .051 58.8 .612 –35.8 3 500 .884 –55.8 4.222 122.2 .056 53.8 .598 –41.2 4 000 .858 –63.1 4.127 114.7 .062 48.5 .576 –47.1 4 500 .830 –70.5 4.022 107.2 .067 44.5 .559 –52.9 5 000 .802 –77.5 3.906 99.9 .072 40.4 .538 –58.7 5 500 .775 –84.5 3.793 92.7 .075 36.3 .516 –64.7 6 000 .746 –91.0 3.669 85.8 .078 32.6 .497 –70.9 6 500 .725 –97.4 3.552 79.0 .081 29.6 .481 –76.7 7 000 .702 –103.5 3.426 72.7 .083 27.2 .470 –82.9 7 500 .681 –109.2 3.324 66.3 .085 24.9 .460 –88.3 8 000 .659 –114.3 3.223 60.1 .088 21.9 .454 –93.6 8 500 .645 –119.4 3.126 54.4 .090 19.9 .450 –99.5 9 000 .625 –124.2 3.050 48.4 .092 17.3 .450 –104.7 9 500 .609 –128.9 2.984 43.1 .094 15.6 .449 –109.8 10 000 .592 –134.2 2.921 37.1 .097 14.1 .441 –116.2 10 500 .574 –139.4 2.868 31.5 .098 11.3 .433 –121.4 11 000 .556 –144.6 2.812 25.7 .100 9.6 .429 –128.7 11 500 .539 –149.9 2.759 20.0 .101 6.7 .424 –134.1 12 000 .526 –155.7 2.705 14.5 .102 6.1 .423 –139.5 12 500 .511 –161.1 2.645 8.3 .105 4.1 .421 –146.5 13 000 .499 –166.2 2.595 3.1 .107 1.9 .429 –153.1 13 500 .487 –171.1 2.543 –2.3 .110 –.5 .439 –157.9 14 000 .476 –175.9 2.496 –8.2 .113 –1.6 .448 –163.5 14 500 .463 179.9 2.464 –13.6 .115 –4.0 .460 –168.9 15 000 .449 175.4 2.441 –19.5 .120 –7.4 .468 –174.1 15 500 .433 169.9 2.408 –24.6 .122 –9.9 .484 –179.4 16 000 .420 164.6 2.383 –30.5 .125 –13.0 .486 175.2 16 500 .404 158.5 2.377 –36.4 .130 –16.5 .489 170.6 17 000 .385 151.0 2.365 –42.3 .134 –19.2 .499 164.2 17 500 .373 143.6 2.350 –48.6 .135 –22.7 .507 158.1 18 000 .357 135.1 2.321 –55.0 .143 –26.3 .518 152.3 5 NE32484A AMP. Parameters VDS = 2 V, ID = 10 mA 6 GAmax. |S21|2 |S12|2 dB dB dB Delay Mason’s U G1 G2 ns dB dB dB .07 .048 35.043 25.44 2.56 –34.30 .11 .048 38.352 17.05 2.52 –31.48 .16 .048 13.27 2.42 13.08 –29.02 .25 .045 31.191 10.30 2.30 12.92 –27.43 .30 .044 28.650 8.97 2.16 22.31 12.73 –25.82 .33 .044 36.156 7.55 2.04 21.03 12.51 –24.99 .39 .044 33.054 6.60 1.92 4 000 19.86 12.31 –24.09 .44 .042 29.569 5.80 1.75 4 500 18.79 12.09 –23.41 .49 .041 29.880 5.07 1.63 5 000 17.79 11.83 –22.84 .54 .041 28.912 4.47 1.48 5 500 16.90 11.58 –22.48 .60 .040 27.197 3.98 1.34 6 000 16.06 11.29 –22.17 .66 .038 25.792 3.54 1.23 6 500 15.39 11.01 –21.78 .70 .038 26.436 3.24 1.14 7 000 14.73 10.70 –21.64 .75 .035 26.491 2.94 1.09 7 500 14.17 10.43 –21.36 .79 .036 27.296 2.70 1.03 8 000 13.64 10.17 –21.11 .83 .034 25.875 2.48 1.00 8 500 13.22 9.90 –20.94 .86 .031 27.068 2.34 .98 9 000 12.82 9.68 –20.77 .89 .033 26.311 2.15 .98 9 500 12.48 9.49 –20.57 .91 .030 27.718 2.01 .98 10 000 12.12 9.31 –20.30 .93 .033 30.819 1.87 .94 10 500 11.79 9.15 –20.17 .97 .031 26.188 1.73 .90 11 000 11.47 8.98 –20.02 1.00 .032 25.806 1.61 .88 11 500 11.17 13.30 8.81 –19.88 1.03 .032 23.528 1.49 .86 12 000 10.91 12.82 8.64 –19.81 1.05 .030 22.859 1.40 .86 12 500 10.61 12.38 8.45 –19.60 1.07 .034 21.908 1.31 .85 13 000 10.41 12.28 8.28 –19.39 1.07 .029 22.287 1.24 .89 13 500 10.21 12.13 8.11 –19.14 1.06 .030 22.459 1.18 .93 14 000 10.03 12.01 7.94 –18.96 1.06 .033 22.098 1.11 .97 14 500 9.91 12.01 7.83 –18.76 1.04 .030 22.242 1.05 1.03 15 000 9.80 12.12 7.75 –18.39 1.02 .033 22.991 .98 1.07 15 500 9.69 12.20 7.63 –18.26 1.01 .028 22.729 .90 1.16 16 000 9.56 12.02 7.54 –18.06 1.02 .033 21.370 .84 1.17 16 500 9.48 12.23 7.52 –17.75 1.00 .033 21.084 .77 1.19 17 000 9.42 7.48 –17.45 .98 .033 20.924 .70 1.24 17 500 9.36 7.42 –17.38 .98 .035 19.871 .65 1.29 18 000 9.26 7.31 –16.92 .95 .036 20.113 .59 1.36 FREQUENCY GUmax. MHz dB 500 41.44 13.44 –40.86 1 000 32.97 13.40 1 500 28.97 13.28 2 000 25.67 2 500 24.04 3 000 3 500 K NE32484A Noise Parameters <TYPICAL CONSTANT NOISE FIGURE CIRCLE> <Γopt. vs. frequency> VDS = 2 V ID = 10 mA VDS = 2 V ID = 10 mA 1.0 1.0 2.0 2.0 0.5 6 8 0.5 4 10 Γopt ∗ 12 2 1.0 0 ∞ 14 0 1.0 ∞ 1 dB 1.5 dB 16 18 2.0 dB –0.5 –0.5 –2.0 –2.0 –1.0 –1.0 f = 12 GHz START 2 GHz STOP 18 GHz STEP 2 GHz <Noise Parameters> VDS = 2 V, ID = 10 mA Γopt. NFmin. (dB) Ga (dB) MAG. 2.0 0.31 18.5 0.85 18 0.39 4.0 0.33 16.1 0.82 45 0.32 6.0 0.38 14.2 0.77 71 0.27 8.0 0.43 12.5 0.70 96 0.20 10.0 0.51 11.7 0.64 118 0.13 12.0 0.60 11.0 0.58 152 0.08 14.0 0.74 10.1 0.54 175 0.08 16.0 0.90 9.4 0.51 –161 0.06 18.0 1.10 9.0 0.48 –138 0.06 Freq. (GHz) Rn/50 ANG. (deg.) 7 NE32484A RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. <TYPES OF SURFACE MOUNT DEVICE> For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535EJ7V0IF00). Soldering process Soldering conditions Infrared ray reflow Peak package’s surface temperature: 230 ˚C or below, Reflow time: 30 seconds or below (210 ˚C or higher), Number of reflow process: 1, Exposure limitNote: None Partial heating method Terminal temperature: 230 ˚C or below, Flow time: 10 seconds or below, Exposure limitNote: None Symbol IR30-00 Note Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 ˚C and relative humidity at 65 % or less. Caution Do not apply more than a single process at once, except for “Partial heating method”. PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the Japanese law concerned and so on, especially in case of removal. 8 NE32484A [MEMO] 9 NE32484A [MEMO] 10 NE32484A [MEMO] 11 NE32484A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2